| Experimental evidence of a very thin superconducting layer in epitaxial indium nitride B Pal, BP Joshi, H Chakraborti, AK Jain, BK Barick, K Ghosh, S Bhunia, ... Superconductor Science and Technology 32 (1), 015009, 2018 | 15 | 2018 |
| Role of defect saturation in improving optical response from InGaN nanowires in higher wavelength regime D Nag, R Sarkar, S Bhunia, T Aggarwal, K Ghosh, S Sinha, S Ganguly, ... Nanotechnology 31 (49), 495705, 2020 | 12 | 2020 |
| Excimer laser annealing: An alternative route and its optimisation to effectively activate Si dopants in AlN films grown by plasma assisted molecular beam epitaxy K Ghosh, P Busi, S Das, JS Rathore, A Laha Materials Research Bulletin 97, 300-305, 2018 | 11 | 2018 |
| Ground-state energy trends in single and multilayered coupled InAs/GaAs quantum dots capped with InGaAs layers: Effects of InGaAs layer thickness and annealing temperature S Shah, K Ghosh, S Jejurikar, A Mishra, S Chakrabarti Materials Research Bulletin 48, 2933-2939, 2013 | 10 | 2013 |
| Tuning the effective band gap and finding the optimal growth condition of InN thin films on GaN/sapphire substrates by plasma assisted molecular beam epitaxy technique K Ghosh, JS Rathore, A Laha Superlattices and Microstructures, 2016 | 9 | 2016 |
| Epitaxial Gd2O3 on strained Si1− xGex layers for next generation complementary metal oxide semiconductor device application K Ghosh, S Das, A Fissel, HJ Osten, A Laha Applied Physics Letters 103 (15), 2013 | 9 | 2013 |
| Decomposition resilience of GaN nanowires, crested and surficially passivated by AlN S Bhunia, R Sarkar, D Nag, K Ghosh, KR Khiangte, S Mahapatra, A Laha Crystal Growth & Design 20 (8), 4867-4874, 2020 | 8 | 2020 |
| Triaxially uniform high-quality AlxGa (1− x) N (x∼ 50%) nanowires on template free sapphire substrate R Sarkar, K Ghosh, S Bhunia, D Nag, KR Khiangte, A Laha Nanotechnology 30 (6), 065603, 2018 | 6 | 2018 |
| Epitaxial Gd2O3 on GaN and AlGaN: a potential candidate for metal oxide semiconductor based transistors on Si for high power application K Ghosh, S Das, KR Khiangte, N Choudhury, A Laha Journal of Physics D: Applied Physics 50 (47), 475102, 2017 | 5 | 2017 |
| Long-Term Stability of Epitaxial (Nd₁₋ ₓGdₓ) ₂O₃ Thin Films Grown on Si (001) for Future CMOS Devices K Ghosh, S Das, A Fissel, HJ Osten, A Laha IEEE Transactions on Electron Devices 63 (7), 2852 - 2857, 2016 | 4* | 2016 |
| Epitaxial lanthanide oxide on III-Nitride substrates for high power MOS HEMT application S Das, K Gosh, R Sarkar, S Dutta, S Mukherjee, S Ganguly, A Laha 41st WOCSDICE: Workshop on Compound Semiconductor Devices and Integrated …, 2017 | 3 | 2017 |
| A detailed investigation on the impact of variation in growth rate, monolayer coverage and barrier thickness on the optical characteristics of InAs/GaAs bilayer quantum dot … N Basu, K Ghosh, S Kabi, S Sengupta, S Chakrabarti Superlattices and Microstructures 57, 150-157, 2013 | 3 | 2013 |
| Engineering the Active Region to Enhance the IQE by~ 8% in AlGaN/GaN based UV-C LED J Acharya, S Venkateshh, K Ghosh 2021 International Conference on Numerical Simulation of Optoelectronic …, 2021 | 2 | 2021 |
| Improved Carrier Confinement With Engineered Electron Blocking Layer in InGaN/GaN-Based Micro-LED at a Lower Current Density CP Singh, K Ghosh 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2022 | 1 | 2022 |
| Study of surface over-layer contribution to Dislocation Assisted Tunneling current: Strategy to improve Pt/n+–GaN Schottky characteristics VSSNV Bellamkonda, S Bhunia, R Sarkar, K Ghosh, A Laha Materials Research Express 6 (10), 105917, 2019 | 1 | 2019 |
| Superconductivity in epitaxial InN thin films with large critical fields B Pal, BP Joshi, H Chakraborti, AK Jain, BK Barick, K Ghosh, A Laha, ... AIP Conference Proceedings 1942 (1), 2018 | 1 | 2018 |
| Impact of GaN buffer layer thickness on structural and optical properties of AlGaN/GaN based high electron mobility transistor structure grown on Si (111) substrate by plasma … K Ghosh, S Das, S Ganguly, D Saha, A Laha Proceedings of the 2015 Third International Conference on Computer …, 2015 | 1 | 2015 |
| Lower Current Density Driven InGaN/GaN Micro-LED with Improved Quantum Efficiency CP Singh, K Ghosh Optik, 171664, 2024 | | 2024 |
| Well-in-Well Active Region Based III-Nitride Colour-Tunable LED AS Rawat, AK Meena, B Choubey, K Ghosh 2023 International Conference on Numerical Simulation of Optoelectronic …, 2023 | | 2023 |
| Optical to Terahertz Engineering A Saha, A Biswas, K Ghosh, N Mukhopadhyay Springer, 2023 | | 2023 |
Apurba LahaProfessor, Department of Electrical Engineering, Indian Institute of Technology BombayVerified email at ee.iitb.ac.in
