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Gourab Dutta
Gourab Dutta
Dept. of E&ECE, IIT Kharagpur
Verified email at ece.iitkgp.ac.in
Title
Cited by
Cited by
Year
Positive Shift in Threshold Voltage for Reactive-Ion- Sputtered Al2O3/AlInN/GaN MIS-HEMT
G Dutta, S Turuvekere, N Karumuri, N DasGupta, A DasGupta
IEEE Electron Device Letters 35 (11), 1085-1087, 2014
602014
Gate leakage mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and its modeling
G Dutta, N DasGupta, A DasGupta
IEEE Transactions on Electron Devices 64 (9), 3609-3615, 2017
522017
Effect of Sputtered-Al2O3Layer Thickness on the Threshold Voltage of III-Nitride MIS-HEMTs
G Dutta, N DasGupta, A DasGupta
IEEE Transactions on Electron Devices 63 (4), 1450-1458, 2016
432016
Low-Temperature ICP-CVD SiNxas Gate Dielectric for GaN-Based MIS-HEMTs
G Dutta, N DasGupta, A DasGupta
IEEE Transactions on Electron Devices 63 (12), 4693-4701, 2016
362016
A compact model of drain current for GaN HEMTs based on 2-DEG charge linearization
N Karumuri, G Dutta, N DasGupta, A DasGupta
IEEE Transactions on Electron Devices 63 (11), 4226-4232, 2016
292016
Modeling and Analysis of Normally-OFF p-GaN Gate AlGaN/GaN HEMT as an ON-Chip Capacitor
A Abdulsalam, N Karumuri, G Dutta
IEEE Transactions on Electron Devices 67 (9), 3536 - 3540, 2020
222020
On the threshold voltage of normally-OFF AlGaN/GaN heterostructure field effect transistors (HFETs) with p-(Al) GaN gate
A Abdulsalam, G Dutta
Semiconductor Science and Technology 35 (1), 015020, 2020
152020
Electrical properties of reactive-ion-sputtered Al2O3 on 4H-SiC
M Shukla, G Dutta, R Mannam, N DasGupta
Thin Solid Films 607, 1-6, 2016
132016
Analysis of the electrical characteristics of GaInP/GaAs HBTs including the recombination effect
G Dutta, S Basu
Journal of semiconductors 33 (5), 054002, 2012
112012
Investigation of Trap Induced Gate Lag Phenomenon in AlGaN/GaN High Electron Mobility Transistors
K De, G Dutta
IEEE 4th International Conference on Emerging Electronics (ICEE), 2018
62018
Realistic nonlocal refrigeration engine based on Coulomb-coupled systems
A Barman, S Halder, SK Varshney, G Dutta, A Singha
Physical Review E 103 (1), 012131, 2021
52021
Low Temperature and High Pressure Oxidized Al2O3 as Gate Dielectric for AlInN/GaN MIS-HEMTs
S Kanaga, G Dutta, B Kushwah, N DasGupta, A DasGupta
IEEE Transactions on Device and Materials Reliability 20 (3), 613 - 621, 2020
42020
Study of interface traps for GaN-based MIS-HEMTs with high pressure oxidized aluminium as gate dielectric
B Kushwah, S Kanaga, G Dutta, NDGA DasGupta
IEEE International Conference on Emerging Electronics (ICEE) 2018, 2019
32019
Analytical modelling of InGaP/GaAs HBTs
G Dutta, S Basu
IEEE Eighth International Conference on Advanced Semiconductor Devices and …, 2010
32010
Normally-Off β-(AlxGa1-x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors With p-GaN Gate: Proposal and Investigation
AD Meshram, A Sengupta, TK Bhattacharyya, G Dutta
IEEE Transactions on Electron Devices 70 (2), 454-460, 2023
22023
Dual-gate β-Ga2O3 nanomembrane transistors: device operation and analytical modeling
A Sengupta, TK Bhattacharyya, G Dutta
Journal of Physics D: Applied Physics 54 (40), 405103 (1-11), 2021
22021
Effect of post deposition annealing on the electrical properties of YSZ thin films deposited by pulsed laser technique
S Sinha, G Dutta, R Mannam, N DasGupta, MSR Rao
Applied Surface Science 513, 145496, 2020
22020
AlGaN/GaN HEMT Fabrication and Challenges
G Dutta, S Kanaga, N DasGupta, A DasGupta
Handbook for III-V High Electron Mobility Transistor Technologies, 2019
22019
Trapping Phenomenon in AlInN/GaN HEMTs: A Study Based on Drain Current Transient Spectroscopy
A Khandelwal, G Dutta, A DasGupta, N DasGupta
International Workshop on the Physics of Semiconductor and Devices, 219-223, 2019
12019
Comparison of shallow interface traps in AlGaN/GaN MIS-devices with three different gate dielectrics
A Tomer, G Dutta, A DasGupta, N DasGupta
IEEE 3rd International Conference on Emerging Electronics (ICEE-2016), 1-3, 2016
12016
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