| Electron trapping, storing, and emission in nanocrystalline Si dots by capacitance–voltage and conductance–voltage measurements S Huang, S Banerjee, RT Tung, S Oda Journal of applied physics 93 (1), 576-581, 2003 | 264 | 2003 |
| Quantum confinement energy in nanocrystalline silicon dots from high-frequency conductance measurement S Huang, S Banerjee, RT Tung, S Oda Journal of applied physics 94 (11), 7261-7265, 2003 | 82 | 2003 |
| Evidence of storing and erasing of electrons in a nanocrystalline-Si based memory device at 77 K S Banerjee, S Huang, T Yamanaka, S Oda Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 45 | 2002 |
| Conducting-tip atomic force microscopy for injection and probing of localized charges in silicon nanocrystals S Banerjee, MA Salem, S Oda Applied physics letters 83 (18), 3788-3790, 2003 | 38 | 2003 |
| Coulomb-blockade effect observed at room temperature in Ge nanocrystalline films deposited by the cluster-beam evaporation technique S Banerjee, S Nozaki, H Morisaki Applied Physics Letters 76 (4), 445-447, 2000 | 26 | 2000 |
| Non-ohmic hopping conduction in Ge nanocrystalline film S Banerjee Physica E: Low-dimensional Systems and Nanostructures 15 (3), 164-168, 2002 | 16 | 2002 |
| Electron transport in Ge nanocrystalline films deposited using the cluster beam evaporation technique S Banerjee, S Nozaki, H Morisaki Journal of applied physics 91 (7), 4307-4311, 2002 | 15 | 2002 |
| Operation of nanocrystalline-silicon-based few-electron memory devices in the light of electron storage, ejection, and lifetime characteristics S Banerjee, S Huang, S Oda Nanotechnology, IEEE Transactions on 2 (2), 88-92, 2003 | 13 | 2003 |
| CV and GV measurements showing single electron trapping in nanocrystalline silicon dot embedded in MOS memory structure S Huang, S Banerjee, S Oda Materials Research Society Symposium Proceedings 686, 209-216, 2002 | 9 | 2002 |
| Statistical emission of electrons from nanocrystalline silicon quantum dot memory nodes in a few-electron MOSFET memory device S Banerjee Solid state communications 125 (10), 567-570, 2003 | 8 | 2003 |
| A photo-oxidation generated low-< i> k</i> dielectric film deposited by reactive evaporation of SiO JJ Si, Y Show, S Banerjee, H Ono, K Uchida, S Nozaki, H Morisaki Microelectronic engineering 60 (3), 313-321, 2002 | 7 | 2002 |
| Tung RT and Oda S S Huang, S Banerjee J. Appl. Phys. 2003, 93, 2003 | 5 | 2003 |
| Temperature and frequency dependencies of charging and discharging properties in MOS memory based on nanocrystalline silicon dot S Huang, S Banerjee, S Oda Materials Research Society Symposium Proceedings 715, 769-774, 2002 | 5 | 2002 |
| Optical reflectivity of superconducting Bi< sub> 3.9</sub> Pb< sub> 0.1</sub> Sr< sub> 3</sub> Ca< sub> 3</sub> Cu< sub> 4</sub> O< sub> x</sub> obtained by glass-ceramic route … S Banerjee, S Chatterjee, BK Chaudhuri Solid State Communications 98 (7), 665-669, 1996 | 4* | 1996 |
| Optical reflectivity of superconducting Bi3. 9Pb0. 1Sr3Ca3Cu4Ox obtained by glass-ceramic route in 0.6-6.2 eV range S Banerjee, S Chatterjee, BK Chaudhuri Solid state communications 98 (7), 665-669, 1996 | 4 | 1996 |
| Hydrogen Dependent Surface Morphology Study of Plasma Deposited SiNx: H Films for Two Gas Systems SiH4/NH3 and SiH4/N2 S Chopra, RP Gupta, S Banerjee Journal of nanoscience and nanotechnology 11 (12), 11216-11221, 2011 | 3 | 2011 |
| Hydrogen dependent surface morphology study of plasma deposited SiN< inf> x</inf>: H films for two Gas Systems SiH< inf> 4</inf>/NH< inf> 3</inf> and SiH< inf> 4</inf>/N< inf … S Chopra, RP Gupta, S Banerjee Nanoelectronics Conference (INEC), 2010 3rd International, 376-377, 2010 | 3* | 2010 |
| Study of normalised resistance and thermopower of a hole doped Bi< sub> 2− x</sub> Cd< sub> x</sub> Sr< sub> 2</sub> CaCu< sub> 2</sub> O< sub> y</sub>(< i> x</i>= 0.0–0.8 … S Banerjee, BK Chaudhuri Solid State Communications 101 (8), 617-620, 1997 | 2* | 1997 |
| Charge transport in thin films containing randomly distributed Ge nanocrystals S Banerjee Journal of materials science letters 20 (24), 2175-2178, 2001 | 1 | 2001 |
| Coulomb blockade observed in a Ge nanocrystalline thin film from a macroscopic-size device and its enhancement by photo-oxidation S Banerjee Solid state communications 120 (2), 113-117, 2001 | 1 | 2001 |
