| Semiconductor device having doped epitaxial region and its methods of fabrication AS Murtthy, DB Aubertine, T Ghani, AJ Pethe US Patent 8,598,003, 2013 | 271 | 2013 |
| Ge-interface engineering with ozone oxidation for low interface-state density D Kuzum, T Krishnamohan, AJ Pethe, AK Okyay, Y Oshima, Y Sun, ... IEEE Electron Device Letters 29 (4), 328-330, 2008 | 226 | 2008 |
| Integration methods to fabricate internal spacers for nanowire devices S Kim, KJ Kuhn, T Ghani, AS Murthy, M Armstrong, R Rios, AJ Pethe, ... US Patent 9,484,447, 2016 | 198 | 2016 |
| Gate contact structure over active gate and method to fabricate same AJ Pethe, T Ghani, M Bohr, C Webb, H Gomez, A Cappellani US Patent 9,461,143, 2016 | 197 | 2016 |
| High performance germanium MOSFETs K Saraswat, CO Chui, T Krishnamohan, D Kim, A Nayfeh, A Pethe Materials Science and Engineering: B 135 (3), 242-249, 2006 | 184 | 2006 |
| Ge (100) and (111) N- and P-FETs With High Mobility and Low-Mobility Characterization D Kuzum, AJ Pethe, T Krishnamohan, KC Saraswat IEEE transactions on electron devices 56 (4), 648-655, 2009 | 126 | 2009 |
| Fevipiprant, an oral prostaglandin DP2 receptor (CRTh2) antagonist, in allergic asthma uncontrolled on low-dose inhaled corticosteroids ED Bateman, AG Guerreros, F Brockhaus, B Holzhauer, A Pethe, RA Kay, ... European Respiratory Journal 50 (2), 2017 | 113 | 2017 |
| Interface-engineered Ge (100) and (111), N-and P-FETs with high mobility D Kuzum, AJ Pethe, T Krishnamohan, Y Oshima, Y Sun, JP McVittie, ... 2007 IEEE International Electron Devices Meeting, 723-726, 2007 | 100 | 2007 |
| High mobility materials and novel device structures for high performance nanoscale MOSFETs KC Saraswat, CO Chui, D Kim, T Krishnamohan, A Pethe 2006 International Electron Devices Meeting, 1-4, 2006 | 91 | 2006 |
| Oxide removal by remote plasma treatment with fluorine and oxygen radicals J Su, A Bodke, A Pethe, J Watanabe US Patent 8,945,414, 2015 | 86 | 2015 |
| Investigation of the performance limits of III-V double-gate n-MOSFETs A Pethe, T Krishnamohan, D Kim, S Oh, HSP Wong, K Saraswat 2006 16th Biennial University/Government/Industry Microelectronics Symposium …, 2006 | 74 | 2006 |
| Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates A Cappellani, AJ Pethe, T Ghani, H Gomez US Patent 8,735,869, 2014 | 48 | 2014 |
| SiGe optoelectronic metal-oxide semiconductor field-effect transistor AK Okyay, AJ Pethe, D Kuzum, S Latif, DA Miller, KC Saraswat Optics letters 32 (14), 2022-2024, 2007 | 36 | 2007 |
| Germanium for high performance MOSFETs and optical interconnects K Saraswat, D Kim, T Krishnamohan, D Kuzum, AK Okyay, A Pethe, ... ECS transactions 16 (10), 3, 2008 | 26 | 2008 |
| Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates A Cappellani, P Pathi, BE Beattie, AJ Pethe US Patent 9,041,106, 2015 | 21 | 2015 |
| Semiconductor device having doped epitaxial region and its methods of fabrication AS Murthy, DB Aubertine, T Ghani, AJ Pethe US Patent 10,957,796, 2021 | 20 | 2021 |
| Area scaling on trigate transistors AJ Pethe, JS Sandford, CJ Wiegand, RD James US Patent App. 13/487,111, 2013 | 16 | 2013 |
| Cardiovascular safety of mometasone/indacaterol and mometasone/indacaterol/glycopyrronium once-daily fixed-dose combinations in asthma: pooled analysis of phase 3 trials E Scosyrev, R van Zyl-Smit, H Kerstjens, C Gessner, O Kornmann, D Jain, ... Respiratory Medicine 180, 106311, 2021 | 14 | 2021 |
| Gate contact structure over active gate and method to fabricate same AJ Pethe, T Ghani, M Bohr, C Webb, H Gomez, A Cappellani US Patent 10,192,783, 2019 | 14 | 2019 |
| Integration methods to fabricate internal spacers for nanowire devices S Kim, KJ Kuhn, T Ghani, AS Murthy, M Armstrong, R Rios, AJ Pethe, ... US Patent 9,859,368, 2018 | 11 | 2018 |
