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Abhishek Sharma
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Resonant spin-transfer-torque nano-oscillators
A Sharma, AA Tulapurkar, B Muralidharan
Physical Review Applied 8 (6), 064014, 2017
332017
Band-pass Fabry-Pèrot magnetic tunnel junctions
A Sharma, A Tulapurkar, B Muralidharan
Applied Physics Letters 112 (19), 2018
312018
Superlattice design for optimal thermoelectric generator performance
P Priyadarshi, A Sharma, S Mukherjee, B Muralidharan
Journal of Physics D: Applied Physics 51 (18), 185301, 2018
282018
Ultrasensitive nanoscale magnetic-field sensors based on resonant spin filtering
A Sharma, A Tulapurkar, B Muralidharan
IEEE Transactions on Electron Devices 63 (11), 4527-4534, 2016
262016
Superior thermoelectric design via antireflection enabled lineshape engineering
S Mukherjee, P Priyadarshi, A Sharma, B Muralidharan
IEEE Transactions on Electron Devices 65 (5), 1896-1901, 2018
142018
Proposal for energy efficient spin transfer torque-magnetoresistive random access memory device
A Sharma, AA Tulapurkar, B Muralidharan
Journal of Applied Physics 129 (23), 2021
122021
Graphene as a nanoelectromechanical reference piezoresistor
A Sinha, A Sharma, P Priyadarshi, A Tulapurkar, B Muralidharan
Physical Review Research 2 (4), 043041, 2020
102020
Role of phase breaking processes on resonant spin transfer torque nano-oscillators
A Sharma, AA Tulapurkar, B Muralidharan
AIP Advances 8 (5), 2018
72018
Power efficient ReLU design for neuromorphic computing using spin Hall effect
V Vadde, B Muralidharan, A Sharma
Journal of Physics D: Applied Physics 56 (41), 415001, 2023
42023
Orthogonal spin current injected magnetic tunnel junction for convolutional neural networks
V Vadde, B Muralidharan, A Sharma
IEEE Transactions on Electron Devices, 2023
42023
Enhancement of thermal spin transfer torque via bandpass energy filtering
P Priyadarshi, A Sharma, B Muralidharan
IEEE Transactions on Nanotechnology 19, 469-474, 2020
42020
Non-uniform superlattice magnetic tunnel junctions
S Chakraborti, A Sharma
Nanotechnology 34 (18), 185206, 2023
32023
Corrections to “Superior Thermoelectric Design via Anti-Reflection Enabled Lineshape Engineering”[May 18 1896-1901]
S Mukherjee, P Priyadarshi, A Sharma, B Muralidharan
IEEE Transactions on Electron Devices 66 (10), 4490-4490, 2019
2019
Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory
A Sharma, A Tulapurkar, B Muralidharan
arXiv preprint arXiv:1908.06279, 2019
2019
Piezoresistance effect in ballistic graphene
A Sinha, A Sharma, A Tulapurkar, VR Rao, B Muralidharan
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Articles 1–15