| Ferroelectric analog synaptic transistors MK Kim, JS Lee Nano letters 19 (3), 2044-2050, 2019 | 437 | 2019 |
| Short-term plasticity and long-term potentiation in artificial biosynapses with diffusive dynamics MK Kim, JS Lee ACS nano 12 (2), 1680-1687, 2018 | 219 | 2018 |
| Synergistic improvement of long‐term plasticity in photonic synapses using ferroelectric polarization in hafnia‐based oxide‐semiconductor transistors MK Kim, JS Lee Advanced Materials 32 (12), 1907826, 2020 | 136 | 2020 |
| CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory MK Kim, IJ Kim, JS Lee Science advances 7 (3), eabe1341, 2021 | 122 | 2021 |
| Emerging materials for neuromorphic devices and systems MK Kim, Y Park, IJ Kim, JS Lee Iscience 23 (12), 2020 | 79 | 2020 |
| Reproducible and reliable resistive switching behaviors of AlO X/HfO X bilayer structures with Al electrode by atomic layer deposition M Akbari, MK Kim, D Kim, JS Lee RSC advances 7 (27), 16704-16708, 2017 | 60 | 2017 |
| Emerging memory devices for artificial synapses Y Park, MK Kim, JS Lee Journal of Materials Chemistry C 8 (27), 9163-9183, 2020 | 55 | 2020 |
| Oxide semiconductor-based ferroelectric thin-film transistors for advanced neuromorphic computing MK Kim, IJ Kim, JS Lee Applied Physics Letters 118 (3), 2021 | 50 | 2021 |
| CMOS-compatible compute-in-memory accelerators based on integrated ferroelectric synaptic arrays for convolution neural networks MK Kim, IJ Kim, JS Lee Science Advances 8 (14), eabm8537, 2022 | 47 | 2022 |
| Ultralow power consumption flexible biomemristors MK Kim, JS Lee ACS applied materials & interfaces 10 (12), 10280-10286, 2018 | 46 | 2018 |
| 2D layered metal-halide perovskite/oxide semiconductor-based broadband optoelectronic synaptic transistors with long-term visual memory Y Park, MK Kim, JS Lee Journal of Materials Chemistry C 9 (4), 1429-1436, 2021 | 43 | 2021 |
| Solution‐Processed Flexible Threshold Switch Devices Y Park, UB Han, MK Kim, JS Lee Advanced Electronic Materials 4 (4), 1700521, 2018 | 33 | 2018 |
| Design of electrodeposited bilayer structures for reliable resistive switching with self-compliance MK Kim, JS Lee ACS Applied Materials & Interfaces 8 (48), 32918-32924, 2016 | 22 | 2016 |
| Highly-scaled and fully-integrated 3-dimensional ferroelectric transistor array for hardware implementation of neural networks IJ Kim, MK Kim, JS Lee Nature Communications 14 (1), 504, 2023 | 19 | 2023 |
| Ion-gating synaptic transistors with long-term synaptic weight modulation Y Park, MK Kim, JS Lee Journal of Materials Chemistry C 9 (16), 5396-5402, 2021 | 18 | 2021 |
| Artificial synaptic transistors based on Schottky barrier height modulation using reduced graphene oxides Y Park, MK Kim, JS Lee Carbon 165, 455-460, 2020 | 16 | 2020 |
| Heterosynaptic Plasticity Emulated by Liquid Crystal–Carbon Nanotube Composites with Modulatory Interneurons IJ Kim, MK Kim, Y Park, JS Lee ACS applied materials & interfaces 12 (24), 27467-27475, 2020 | 14 | 2020 |
| Vertical ferroelectric thin-film transistor array with a 10-nm gate length for high-density three-dimensional memory applications IJ Kim, MK Kim, JS Lee Applied Physics Letters 121 (4), 2022 | 9 | 2022 |
| Inorganic perovskite quantum dot-mediated photonic multimodal synapse GK Gupta, IJ Kim, Y Park, MK Kim, JS Lee ACS Applied Materials & Interfaces 15 (14), 18055-18064, 2023 | 6 | 2023 |
| Voltage‐Tunable Ultra‐Steep Slope Atomic Switch with Selectivity over 1010 KH Kim, Y Park, MK Kim, JS Lee Small 17 (29), 2100401, 2021 | 4 | 2021 |
Jang-Sik LeeProfessor of Materials Science and Engineering, Pohang University of Science and Technology (POSTECHVerified email at postech.ac.kr
