High temperature performance of wide bandgap semiconductors devices for high power applications BN Shashikala, BS Nagabhushana Int. J. Eng. Sci. Technol 2 (12), 7586-7591, 2010 | 7 | 2010 |
Modeling and Performance Evaluation of Wide Bandgap Semiconductor devices for High Power Applications BN Shashikala, BS Nagabhushana, SK Shastry Journal of recent advances in Networking, VLSI and Signal Processing, 327-335, 2010 | 5 | 2010 |
Reduction of reverse leakage current at the TiO 2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes BN Shashikala, BS Nagabhushana Semiconductor Phys., Quantum Electron. Optoelectronics 24 (04), 399-406, 2021 | 2 | 2021 |
Ohmic Contact Characterization Using Image Processing BN Shashikala, BS Nagabhushana International Journal of Electrical and Computer Engineering 5 (6), 2015 | 1 | 2015 |
Leg rehabilitation and mobility aid for paralytic patients using bionics C Akhil, N Manjunath, R Sanjith, P Suhas, BN Shashikala 2016 2nd International Conference on Applied and Theoretical Computing and …, 2016 | | 2016 |
Modeling of GaN MESFETs at high temperature BN Shashikala, BS Nagabhushana 2010 International Conference on Microelectronics, 511-514, 2010 | | 2010 |
RESEARCH INVESTIGATIONS ON GaN SCHOTTKY DIODE AND LEAKAGE CURRENT REDUCTION USING FIELD PLATE TECHNIQUE BN Shashikala Chennai, 0 | | |