| Investigation of AlGaN Channel HEMTs on β-Ga2O3 Substrate for High-Power Electronics A Revathy, CS Boopathi, OI Khalaf, CAT Romero Electronics 11 (2), 225, 2022 | 18 | 2022 |
| Design and analysis of normally-off GaN-HEMT using β-Ga2O3 buffer for low-loss power converter applications A Revathy, JV Kumar, P Murugapandiyan, M Wasim, KN Devi, ... Micro and Nanostructures 182, 207643, 2023 | 2 | 2023 |
| Composite-channel In0. 17Al0. 83N/In0. 1Ga0. 9N/GaN/Al0. 04Ga0. 96N high electron mobility transistors for RF applications A Revathy, B CS INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING 31 (9), 2021 | 1 | 2021 |
| Design and Analysis of AlGaN/InGaN/GaN and InAlN/InGaN/GaN HEMTs for High-Power Wide Bandwidth Applications A Revathy, CS Boopathi, D Nirmal | 1 | 2021 |
| Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics P Murugapandiyan, K Sri Rama Krishna, A Revathy, A Fletcher Journal of Electronic Materials, 1-15, 2024 | | 2024 |
| Ultra-wide Bandgap AlGaN Channel HEMTs for Portable Power Electronics Applications. J Anih, IO Eme, JC Nwaogaidu, IE Ibenekwu, A Revathy, CS Boopathi International Journal of Nanoelectronics & Materials 16 (2), 2023 | | 2023 |
| Ultra-wide Bandgap AlGaN Channel HEMTs for Portable Power Electronics Applications A Revathy, CS Boopathi | | |
