| Cycle of two-step etching process using ICP for diamond MEMS applications T Yamada, H Yoshikawa, H Uetsuka, S Kumaragurubaran, N Tokuda, ... Diamond and related materials 16 (4-7), 996-999, 2007 | 68 | 2007 |
| Field emission from surface‐modified heavily phosphorus‐doped homoepitaxial (111) diamond T Yamada, CE Nebel, K Somu, H Uetsuka, H Yamaguchi, Y Kudo, ... physica status solidi (a) 204 (9), 2957-2964, 2007 | 22 | 2007 |
| 1.5 μm emission characteristics of Er3+-doped stoichiometric LiNbO3 J Kang, M Lee, S Lee, K Lim, K Somu, S Takekawa, K Kitamura Applied physics letters 85 (19), 4367-4369, 2004 | 15 | 2004 |
| Surface modification by vacuum annealing for field emission from heavily phosphorus-doped homoepitaxial (1 1 1) diamond T Yamada, CE Nebel, K Somu, S Shikata Applied surface science 254 (23), 7921-7924, 2008 | 8 | 2008 |
| Response to:“Comment on ‘1.5 μm emission characteristics of Er3+-doped stoichiometric LiNbO3’”[Appl. Phys. Lett. 86, 266101 (2005)] J Kang, M Lee, S Lee, K Lim, K Somu, S Takekawa, K Kitamura Applied Physics Letters 86 (26), 2005 | 5 | 2005 |
| Effect of vacuum annealing on field emission from heavily phosphorus doped homoepitaxial (111) diamond T Yamada, K Somu, CE Nebel, S Shikata Diamond and related materials 17 (4-5), 745-748, 2008 | 4 | 2008 |
| Vacuum annealing temperature dependence on field emission from heavily P-doped diamond T Yamada, K Somu, CE Nebel, S Shikata IEICE Technical Report; IEICE Tech. Rep. 107 (177), 33-36, 2007 | | 2007 |
