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Dr. Nipanka Bora
Dr. Nipanka Bora
Verified email at nehu.ac.in - Homepage
Title
Cited by
Cited by
Year
An analytical universal model for symmetric double gate junctionless transistors
N Bora, P Das, R Subadar
Журнал нано-та електронної фізики, 02003-1-02003-4, 2016
152016
A complete analytical model of surface potential and drain current for an ultra short channel double gate asymmetric junctionless transistor
N Bora, R Subadar
Journal of Nanoelectronics and Optoelectronics 14 (9), 1283-1289, 2019
132019
Quantum mechanical treatment on modeling of drain current, capacitances and transconductances for thin film undoped symmetric DG MOSFETs
N Bora, RK Baruah
2011 International Conference on Nanoscience, Technology and Societal …, 2011
132011
Performance analysis of 3-D asymmetric junctionless double gate MOSFET
MR Hazarika, N Bora
2017 International Conference on Energy, Communication, Data Analytics and …, 2017
92017
A surface potential and threshold voltage model including quantum mechanical effects for a dual material double gate Junctionless field effect Transistor (DMDG-JLFET)
N Bora, P Pegu, R Subadar
Journal of Advanced Physics 6 (3), 408-412, 2017
62017
Quantum mechanical analysis on modeling of surface potential and drain current for nanowire jlfet
N Bora, N Deka, R Subadar
Journal of Nano Research 64, 123-134, 2020
52020
Analytic Solution for Symmetric DG MOSFETs with Gate-Oxide-Thickness Asymmetry
RK Baruah, N Bora
Journal of Computational and Theoretical Nanoscience 8 (10), 2025-2028(4), 2011
42011
Impact of temperature on the performance of sub-35nm symmetric Double Gate Junctionless Transistor based inverter using High-K gate dielectric, a TCAD simulation study
UC Boro, N Bora, PA Pegu, R Subadar
2016 IEEE 1st International Conference on Power Electronics, Intelligent …, 2016
32016
An Approach for Drain Current Modeling Including Quantum Mechanical Effects for a DMDG Junctionless Field Effect Nanowire Transistor
N Bora
Silicon 14 (9), 4945-4954, 2022
22022
A drain current and transconductance analytical model for symmetric double gate junctionless FENT
N Bora, N Deka, R Subadar
Journal of Nano Research 65, 39-50, 2020
22020
An Analytical Surface Potential Model for Highly Doped Ultrashort Asymmetric Junctionless Transistor
N Bora, R Subadar
Advances in Communication, Devices and Networking: Proceedings of ICCDN 2018 …, 2019
12019
Performance Evaluation of Dual Material Double Gate Junctionless Field Effect Transistor (DMDG-JLFET) Based Inverter with High-k Spacer and High-k Gate Dielectrics.
PA Pegu, N Bora, UC Boro, R Subadar
ICEPMU-2016, 227, 2016
12016
A TCAD simulation-based analysis of the asymmetrically designed channel effects on double gate-junctionless field-effect nanowire transistor
H Das, N Bora
2023 4th International Conference on Computing and Communication Systems …, 2023
2023
A Charge-Based Capacitance Model for Tri-Gate FinFET
K Jyndiang, N Bora
Flexible Electronics for Electric Vehicles: Select Proceedings of FlexEV …, 2022
2022
A TCAD Simulation-Based Study of the Radiation Effects on Ultra-Thin Symmetric Double Gate (SDG) Junctionless Field Effect Nanowire Transistor (JLFENT)
N Deka, C Duari, N Bora
Flexible Electronics for Electric Vehicles: Select Proceedings of FlexEV …, 2022
2022
Performance Analysis of 3-D Parallel Gated Junctionless Field Effect Nanowire Transistor
N Bora, A Sureka, C Deka, S Mipun
Intelligent Computing Techniques for Smart Energy Systems: Proceedings of …, 2022
2022
Drain Current Analytical Model for Undoped Symmetric DG MOSFETs with Small Asymmetry in Gate-Oxide-Thickness
PD N. Bora, N Deka
International Conference on Computing and Communication Systems (I3CS’15) 2, 2015
2015
Analytical modeling of nanoscaled junctionless MOS transistors
N Bora
Shillong, 0
A Visual TCAD simulation based study on the capacitance effects on ultra-thin symmetric double gate (SDG) junctionless field effect nanowire transistor (JLFENT)
N Bora, N Deka
Performance analysis of ultra short DGMOS junctionless transistors with high-k gate dielectric
N Bora, R Subadar
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