| Direct observation of the core structures of threading dislocations in GaN Y Xin, SJ Pennycook, ND Browning, PD Nellist, S Sivananthan, F Omnes, ... Applied physics letters 72 (21), 2680-2682, 1998 | 223 | 1998 |
| Optoelectronic properties of Cd1− xZnxTe films grown by molecular beam epitaxy on GaAs substrates DJ Olego, JP Faurie, S Sivananthan, PM Raccah Applied physics letters 47 (11), 1172-1174, 1985 | 222 | 1985 |
| Magneto-optical investigations of a novel superlattice: HgTe-CdTe Y Guldner, G Bastard, JP Vieren, M Voos, JP Faurie, A Million Physical review letters 51 (10), 907, 1983 | 213 | 1983 |
| Linearity (commutativity and transitivity) of valence-band discontinuity in heterojunctions with Te-based II-VI semiconductors: CdTe, HgTe, and ZnTe TM Duc, C Hsu, JP Faurie Physical review letters 58 (11), 1127, 1987 | 177 | 1987 |
| CdTe‐HgTe multilayers grown by molecular beam epitaxy JP Faurie, A Million, J Piaguet Applied Physics Letters 41 (8), 713-715, 1982 | 170 | 1982 |
| Methods for magnetotransport characterization of IR detector materials JR Meyer, CA Hoffman, FJ Bartoli, DA Arnold, S Sivananthan, JP Fauri Semiconductor Science and Technology 8 (6S), 805, 1993 | 167 | 1993 |
| Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100) R Sporken, S Sivananthan, KK Mahavadi, G Monfroy, M Boukerche, ... Applied physics letters 55 (18), 1879-1881, 1989 | 154 | 1989 |
| CdTe-GaAs (100) interface: MBE growth, rheed and XPS characterization JP Faurie, C Hsu, S Sivananthan, X Chu Surface Science 168 (1-3), 473-482, 1986 | 139 | 1986 |
| Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates F Vigue, P Vennegues, S Vezian, M Laügt, JP Faurie Applied Physics Letters 79 (2), 194-196, 2001 | 135 | 2001 |
| AES study of the very first stages of condensation of gold films on silicon (111) surfaces G Le Lay, JP Faurie Surface Science 69 (1), 295-300, 1977 | 123 | 1977 |
| The segregation of impurities and the self‐compensation problem in II‐VI compounds JL Pautrat, N Magnea, JP Faurie Journal of Applied Physics 53 (12), 8668-8677, 1982 | 122 | 1982 |
| Relation between crystallographic orientation and the condensation coefficients of Hg, Cd, and Te during molecular‐beam‐epitaxial growth of Hg1−xCdxTe and … S Sivananthan, X Chu, J Reno, JP Faurie Journal of applied physics 60 (4), 1359-1363, 1986 | 117 | 1986 |
| Compositional dependence of the Raman frequencies and line shapes of Te determined with films grown by molecular-beam epitaxy DJ Olego, PM Raccah, JP Faurie Physical Review B 33 (6), 3819, 1986 | 117 | 1986 |
| Epitaxy of noble metals and (111) surface superstructures of silicon and germanium part I: Study at room temperature G Le Lay, G Quentel, JP Faurie, A Masson Thin Solid Films 35 (3), 273-287, 1976 | 114 | 1976 |
| Molecular beam epitaxy of II–VI compounds: CdxHg1− xTe JP Faurie, A Million Journal of Crystal Growth 54 (3), 582-585, 1981 | 107 | 1981 |
| Micro epitaxial lateral overgrowth of GaN/sapphire by metal organic vapour phase epitaxy E Frayssinet, B Beaumont, JP Faurie, P Gibart, Z Makkai, B Pécz, ... MRS Internet Journal of Nitride Semiconductor Research 7, 1-7, 2002 | 103 | 2002 |
| Band offsets and lattice-mismatch effects in strained-layer CdTe/ZnTe superlattices H Mathieu, J Allègre, A Chatt, P Lefebvre, JP Faurie Physical Review B 38 (11), 7740, 1988 | 101 | 1988 |
| Nanoindentation of Si, GaP, GaAs and ZnSe single crystals SE Grillo, M Ducarroir, M Nadal, E Tournie, JP Faurie Journal of Physics D: Applied Physics 36 (1), L5, 2002 | 99 | 2002 |
| Structure of CdTe (111) B grown by MBE on misoriented Si (001) YP Chen, S Sivananthan, JP Faurie Journal of electronic materials 22, 951-957, 1993 | 94 | 1993 |
| Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof B Beaumont, JP Faurie, P Gibart US Patent 7,445,673, 2008 | 91 | 2008 |
