Samaresh Das, Prof.

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Samit K RayDepartment of Physics, IIT KharagpurVerified email at phy.iitkgp.ac.in
Veerendra DhyaniCARE IIT Delhi, Trinity College Dublin, IMRE A*STARVerified email at imre.a-star.edu.sg
Akshay MoudgilAssistant Professor, IIT Jodhpur | NTU Singapore | IIT DelhiVerified email at iitj.ac.in
Dr. Santanu MannaAsst. Prof. IIT Delhi (present); JKU Linz, Austria; CQD Northwestern, USA; UniTrento, Italy, IITKGPVerified email at ee.iitd.ac.in
Isabelle FerainGlobalfoundriesVerified email at globalfoundries.com
Prashant MishraBiochemical Engineering & Biotechnology IIT DelhiVerified email at dbeb.iitd.ac.in
Wasi UddinIndia Semiconductor Mission: IIT Bombay: IIT DelhiVerified email at iitd.ac.in
Rodrigo T. DoriaCentro Universitário da FEIVerified email at fei.edu.br
Renan TrevisoliPUC-SPVerified email at pucsp.br
Aluguri RakeshNational Chiao Tung University, Hsinchu, TaiwanVerified email at nctu.edu.tw
Yordan M. Georgiev, PhDHead of Nanofabrication, I-te of Ion Beam Phys. & Mat. Res., Helmholtz-Centrum Dresden-RossendorfVerified email at hzdr.de
Marcelo Antonio PavanelloFull Professor, Department of Electrical Engineering, Centro Universitário da FEIVerified email at fei.edu.br
Michelly de SouzaFull Professor, Centro Universitário da FEIVerified email at fei.edu.br
Lorenzo PavesiProfessor of Physics, University of TrentoVerified email at unitn.it
Neeti KalyaniPostdoc Technical University of Denmark; PhD Indian Institute of Technology DelhiVerified email at dtu.dk
A.N.NazarovInstitute of Semiconductor Physics NASUVerified email at lab15.kiev.ua
Maryam shayestehUniversity of SouthamptonVerified email at soton.ac.uk
Suvra Prakash MondalAssociate Professor, Department of Physics, National Institute of Technology Agartala, India-799046Verified email at nita.ac.in
Nicola DaldossoUniversità di VeronaVerified email at univr.it
Nikolay PetkovStaff Researcher, Tyndall National Institute, IrelandVerified email at tyndall.ie

Samaresh Das, Prof.

Indian institute of technology, Tyndall National Institute, Hitachi Cambridge Lab

Verified email at care.iitd.ac.in - Homepage

Nano-electronics and -photonics


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High-Speed Scalable Silicon-MoS₂ P-N Heterojunction Photodetectors V Dhyani, S Das Scientific reports 7 (1), 44243, 2017	138	2017
Nanocrystals for silicon-based light-emitting and memory devices SK Ray, S Maikap, W Banerjee, S Das Journal of Physics D: Applied Physics 46 (15), 153001, 2013	138	2013
Surface-potential-based drain current analytical model for triple-gate junctionless nanowire transistors RD Trevisoli, RT Doria, M de Souza, S Das, I Ferain, MA Pavanello IEEE Transactions on Electron Devices 59 (12), 3510-3518, 2012	120	2012
High efficiency Si/CdS radial nanowire heterojunction photodetectors using etched Si nanowire templates S Manna, S Das, SP Mondal, R Singha, SK Ray The Journal of Physical Chemistry C 116 (12), 7126-7133, 2012	120	2012
Wafer-Scale Synthesized MoS₂/Porous Silicon Nanostructures for Efficient and Selective Ethanol Sensing at Room Temperature P Dwivedi, S Das, S Dhanekar ACS applied materials & interfaces 9 (24), 21017-21024, 2017	64	2017
Improved charge injection characteristics of Ge nanocrystals embedded in hafnium oxide for floating gate devices S Das, K Das, RK Singha, A Dhar, SK Ray Applied Physics Letters 91 (23), 233118, 2007	57	2007
Scalable fabrication of prototype sensor for selective and sub-ppm level ethanol sensing based on TiO₂ nanotubes decorated porous silicon P Dwivedi, N Chauhan, P Vivekanandan, S Das, DS Kumar, S Dhanekar Sensors and Actuators B: Chemical 249, 602-610, 2017	56	2017
Studies on conduction mechanisms of pentacene based diodes using impedance spectroscopy VS Reddy, S Das, SK Ray, A Dhar Journal of Physics D: Applied Physics 40 (24), 7687, 2007	56	2007
Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors T Rudenko, A Nazarov, I Ferain, S Das, R Yu, S Barraud, P Razavi Applied Physics Letters 101 (21), 213502, 2012	53	2012
Structural and optical properties of germanium nanostructures on Si (100) and embedded in high-k oxides SK Ray, S Das, RK Singha, S Manna, A Dhar Nanoscale research letters 6 (1), 224, 2011	49	2011
Optical and electrical properties of undoped and doped Ge nanocrystals S Das, R Aluguri, S Manna, R Singha, A Dhar, L Pavesi, SK Ray Nanoscale research letters 7 (1), 143, 2012	47	2012
MoS₂/TiO₂ Hybrid Nanostructure‐Based Field‐Effect Transistor for Highly Sensitive, Selective, and Rapid Detection of Gram‐Positive Bacteria A Moudgil, S Singh, N Mishra, P Mishra, S Das Advanced Materials Technologies 5 (1), 1900615, 2020	46	2020
Vancomycin functionalized WO3 thin film-based impedance sensor for efficient capture and highly selective detection of Gram-positive bacteria S Singh, A Moudgil, N Mishra, S Das, P Mishra Biosensors and Bioelectronics, 2019	46	2019
Self-powered room temperature broadband infrared photodetector based on MoSe₂/germanium heterojunction with 35 A/W responsivity at 1550 nm V Dhyani, M Das, W Uddin, PK Muduli, S Das Applied Physics Letters 114 (12), 121101, 2019	46	2019
Room temperature infrared photoresponse of self assembled Ge/Si (001) quantum dots grown by molecular beam epitaxy RK Singha, S Manna, S Das, A Dhar, SK Ray Applied Physics Letters 96 (23), 233113, 2010	45	2010
Optically Pumped Broadband Terahertz Modulator Based on Nanostructured PtSe₂ Thin Films A Jakhar, P Kumar, A Moudgil, V Dhyani, S Das Advanced Optical Materials, 1901714, 2020	42	2020
Broadband infrared photodetector based on nanostructured MoSe2–Si heterojunction extended up to 2.5 μm spectral range JW John, V Dhyani, S Maity, S Mukherjee, SK Ray, V Kumar, S Das Nanotechnology 31 (45), 455208, 2020	41	2020
The zero temperature coefficient in junctionless nanowire transistors R Doria Trevisoli, R Trevisoli Doria, M de Souza, S Das, I Ferain, ... Applied Physics Letters 101 (6), 062101, 2012	37	2012
Synthesis of α-MoO3 nano-flakes by dry oxidation of RF sputtered Mo thin films and their application in gas sensing P Dwivedi, S Dhanekar, S Das Semiconductor Science and Technology 31 (11), 115010, 2016	36	2016
Device design and estimated performance for p-type junctionless transistors on bulk germanium substrates R Yu, S Das, I Ferain, P Razavi, M Shayesteh, A Kranti, R Duffy, ... IEEE Transactions on Electron Devices 59 (9), 2308-2313, 2012	36	2012

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