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Dr. Santosh Kumar Vishvakarma
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Year
Effect of drain doping profile on double-gate tunnel field-effect transistor and its influence on device RF performance
V Vijayvargiya, SK Vishvakarma
IEEE Transactions on Nanotechnology 13 (5), 974-981, 2014
1662014
A single-ended with dynamic feedback control 8T subthreshold SRAM cell
CB Kushwah, SK Vishvakarma
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 24 (1), 373-377, 2015
982015
Automated system for epileptic EEG detection using iterative filtering
RR Sharma, P Varshney, RB Pachori, SK Vishvakarma
IEEE Sensors Letters 2 (4), 1-4, 2018
932018
Analytical modeling of split-gate junction-less transistor for a biosensor application
S Singh, B Raj, SK Vishvakarma
Sensing and bio-sensing research 18, 31-36, 2018
662018
Stable, reliable, and bit-interleaving 12T SRAM for space applications: A device circuit co-design
N Yadav, AP Shah, SK Vishvakarma
IEEE Transactions on Semiconductor Manufacturing 30 (3), 276-284, 2017
552017
Precise analytical model for short channel cylindrical gate (CylG) gate-all-around (GAA) MOSFET
D Sharma, SK Vishvakarma
Solid-state electronics 86, 68-74, 2013
522013
An improved read-assist energy efficient single ended PPN based 10T SRAM cell for wireless sensor network
P Sanvale, N Gupta, V Neema, AP Shah, SK Vishvakarma
Microelectronics Journal 92, 104611, 2019
492019
A robust, ultra low-power, data-dependent-power-supplied 11T SRAM cell with expanded read/write stabilities for internet-of-things applications
V Sharma, M Gopal, P Singh, SK Vishvakarma, SS Chouhan
Analog Integrated Circuits and Signal Processing 98 (2), 331-346, 2019
492019
Analyses of DC and analog/RF performances for short channel quadruple-gate gate-all-around MOSFET
D Sharma, SK Vishvakarma
microelectronics journal 46 (8), 731-739, 2015
482015
A write‐improved low‐power 12T SRAM cell for wearable wireless sensor nodes
V Sharma, S Vishvakarma, SS Chouhan, K Halonen
International Journal of Circuit Theory and Applications 46 (12), 2314-2333, 2018
462018
On-chip adaptive body bias for reducing the impact of NBTI on 6T SRAM cells
AP Shah, N Yadav, A Beohar, SK Vishvakarma
IEEE Transactions on Semiconductor Manufacturing 31 (2), 242-249, 2018
462018
Ultra-low power high stability 8T SRAM for application in object tracking system
P Singh, SK Vishvakarma
IEEE Access 6, 2279-2290, 2017
362017
A 220 mV robust read-decoupled partial feedback cutting based low-leakage 9T SRAM for Internet of Things (IoT) applications
V Sharma, M Gopal, P Singh, SK Vishvakarma
AEU-International Journal of Electronics and Communications 87, 144-157, 2018
332018
Half-select free bit-line sharing 12T SRAM with double-adjacent bits soft error correction and a reconfigurable FPGA for low-power applications
V Sharma, P Bisht, A Dalal, M Gopal, SK Vishvakarma, SS Chouhan
AEU-International Journal of Electronics and Communications 104, 10-22, 2019
322019
Application Specific Microcontroller Design for Internet of Things Based Wireless Sensor Network
D Yadav, SS Chouhan, SK Vishvakarma, B Raj
Sensor Letters 16 (5), 374-385, 2018
312018
Robust task-space motion control of a mobile manipulator using a nonlinear control with an uncertainty estimator
S Mishra, PS Londhe, S Mohan, SK Vishvakarma, BM Patre
Computers & Electrical Engineering 67, 729-740, 2018
302018
A CORDIC based configurable activation function for ANN applications
G Raut, S Rai, SK Vishvakarma, A Kumar
2020 IEEE computer society annual symposium on VLSI (ISVLSI), 78-83, 2020
262020
Soft error hardened asymmetric 10T SRAM cell for aerospace applications
AP Shah, SK Vishvakarma, M Hübner
Journal of Electronic Testing 36, 255-269, 2020
262020
A reliable, multi-bit error tolerant 11T SRAM memory design for wireless sensor nodes
V Sharma, N Gupta, AP Shah, SK Vishvakarma, SS Chouhan
Analog Integrated Circuits and Signal Processing 107 (2), 339-352, 2021
252021
A sub-threshold eight transistor (8T) SRAM cell design for stability improvement
CB Kushwah, SK Vishvakarma
2014 IEEE International Conference on IC Design & Technology, 1-4, 2014
252014
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