| Mechanism of ohmic contact formation in AlGaN/GaN high electron mobility transistors N Chaturvedi, U Zeimer, J Würfl, G Tränkle Semiconductor Science and technology 21 (2), 175, 2006 | 70 | 2006 |
| The prevalence of hepatitis C virus antibodies among the voluntary blood donors of New Delhi, India A Jain, SS Rana, P Chakravarty, RK Gupta, NS Murthy, MC Nath, ... European journal of epidemiology 18, 695-698, 2003 | 70 | 2003 |
| Optimal interconnections to address partial shading losses in solar photovoltaic arrays S Pareek, N Chaturvedi, R Dahiya Solar Energy 155, 537-551, 2017 | 67 | 2017 |
| Highly rugged 30 GHz GaN low-noise amplifiers M Rudolph, N Chaturvedi, K Hirche, J Wurfl, W Heinrich, GÜ Trankle IEEE Microwave and Wireless Components Letters 19 (4), 251-253, 2009 | 47 | 2009 |
| High-resolution AlGaN/GaN HEMT-based electrochemical sensor for biomedical applications N Sharma, S Mishra, K Singh, N Chaturvedi, A Chauhan, C Periasamy, ... IEEE Transactions on Electron Devices 67 (1), 289-295, 2019 | 35 | 2019 |
| On the recovery time of highly robust low-noise amplifiers A Liero, M Dewitz, N Chaturvedi, J Xu, M Rudolph IEEE transactions on microwave theory and techniques 58 (4), 781-787, 2010 | 35 | 2010 |
| Highly robust X-band LNA with extremely short recovery time M Rudolph, M Dewitz, A Liero, I Khalil, N Chaturvedi, C Wipf, ... 2009 IEEE MTT-S International Microwave Symposium Digest, 781-784, 2009 | 29 | 2009 |
| Highly Robust X-Band LNA with Extremely Short Recovery Time GT Matthias Rudolph, Mike Dewitz, Armin Liero, Ibrahim Khalil, Nidhi ... IEEE MTT-S International Microwave Symposium digest 7June, 2009, Boston, USA …, 2009 | 29* | 2009 |
| Highly Robust X-Band LNA with Extremely Short Recovery Time GT Matthias Rudolph, Mike Dewitz, Armin Liero, Ibrahim Khalil, Nidhi ... IEEE MTT-S International Microwave Symposium digest 7June, 2009, Boston,USA …, 2009 | 29* | 2009 |
| Investigation and reduction of leakage current associated with gate encapsulation by SiNx in AlGaN/GaN HFETs SA Chevtchenko, P Kurpas, N Chaturvedi, R Lossy, J Würfl 2011 International Conference on Compound Semiconductor Manufacturing …, 2011 | 28 | 2011 |
| Large area AlGaN/GaN HEMTs grown on insulating silicon carbide substrates R Lossy, N Chaturvedi, P Heymann, J Würfl, S Müller, K Köhler physica status solidi (a) 194 (2), 460-463, 2002 | 23 | 2002 |
| AlGaN/GaN HEMT based sensor and system for polar liquid detection N Chaturvedi, K Singh, P Kachhawa, R Lossy, S Mishra, A Chauhan, ... Sensors and Actuators A: Physical 302, 111799, 2020 | 19 | 2020 |
| Refined isolation techniques for GaN-based high electron mobility transistors N Sharma, SK Dhakad, C Periasamy, N Chaturvedi Materials science in semiconductor processing 87, 195-201, 2018 | 17 | 2018 |
| Detection of heavy metal ions using meander gated GaN HEMT sensor S Mishra, P Kachhawa, RR Thakur, AK Jain, K Singh, N Chaturvedi Sensors and Actuators A: Physical 332, 113119, 2021 | 16 | 2021 |
| GaN HEMT based biosensor for the detection of breast cancer marker (C-erbB2) N Chaturvedi, R Chowdhury, S Mishra, K Singh, N Chaturvedi, ... Semiconductor Science and Technology 36 (4), 045018, 2021 | 16 | 2021 |
| Influence of AlGaN and InGaN back barriers on the performance of AlGaN/GaN HEMT SP Singh, N Chaturvedi IETE Technical Review 33 (1), 40-44, 2016 | 16 | 2016 |
| Antigen-antibody interaction-based GaN HEMT biosensor for C3G detection P Kachhawa, S Mishra, AK Jain, C Tripura, J Joseph, V Radha, ... IEEE Sensors Journal 22 (7), 6256-6262, 2022 | 15 | 2022 |
| Optimization of ohmic contacts on thick and thin AlGaN/GaN HEMTs structures S Dhakad, N Sharma, C Periasamy, N Chaturvedi Superlattices and Microstructures 111, 922-926, 2017 | 15 | 2017 |
| High temperature characterization of Pt‐based Schottky diodes on AlGaN/GaN heterostructures J Pedrós, R Cuerdo, R Lossy, N Chaturvedi, J Würfl, F Calle physica status solidi c 3 (6), 1709-1712, 2006 | 14 | 2006 |
| Investigation of high-temperature effects on the performance of AlGaN/GaN high electron mobility transistors N Sharma, C Periasamy, N Chaturvedi Journal of Nanoelectronics and Optoelectronics 11 (6), 694-701, 2016 | 12 | 2016 |
