| Bipolar and unipolar resistive switching in Cu-doped SiO2 C Schindler, SCP Thermadam, R Waser, MN Kozicki Electron Devices, IEEE Transactions on 54 (10), 2762-2768, 2007 | 488 | 2007 |
| Influence of Cu diffusion conditions on the switching of Cu-SiO2-based resistive memory devices SP Thermadam, SK Bhagat, TL Alford, Y Sakaguchi, MN Kozicki, ... Thin Solid Films 518 (12), 3293-3298, 2010 | 97 | 2010 |
| Conductive-bridge memory (CBRAM) with excellent high-temperature retention JR Jameson, P Blanchard, C Cheng, J Dinh, A Gallo, V Gopalakrishnan, ... 2013 IEEE International Electron Devices Meeting, 30.1. 1-30.1. 4, 2013 | 81 | 2013 |
| Inherent diode isolation in programmable metallization cell resistive memory elements SC Puthentheradam, DK Schroder, MN Kozicki Applied Physics A 102, 817-826, 2011 | 53 | 2011 |
| A low power non-volatile memory element based on copper in deposited silicon oxide M Balakrishnan, SCP Thermadam, M Mitkova, MN Kozicki 2006 7th Annual Non-Volatile Memory Technology Symposium, 104-110, 2006 | 44 | 2006 |
| Read scrub with adaptive counter management Y Huang, C Avila, D Lee, H Chin, D Dutta, S Puthenthermadam, D Raghu US Patent 9,552,171, 2017 | 43 | 2017 |
| Structure of copper-doped tungsten oxide films for solid-state memory C Gopalan, MN Kozicki, S Bhagat, SC Puthen Thermadam, TL Alford, ... Journal of non-crystalline solids 353 (18-21), 1844-1848, 2007 | 40 | 2007 |
| First read countermeasures in memory D Dutta, I Alrod, HY Tseng, A Desai, J Wan, K Cheah, ... US Patent 10,026,486, 2018 | 28 | 2018 |
| State dependent sensing for wordline interference correction S Puthenthermadam, D Dutta US Patent 9,721,652, 2017 | 27 | 2017 |
| ON state stability of programmable metalization cell (PMC) memory D Kamalanathan, S Baliga, SCP Thermadam, M Kozicki 2007 Non-Volatile Memory Technology Symposium, 91-96, 2007 | 26 | 2007 |
| Nonvolatile memory cells and methods of making such cells V Prabhakar, K Shakeri, LT Hinh, SC Puthenthermadam US Patent 8,897,067, 2014 | 16 | 2014 |
| Fast detection of defective memory block to prevent neighbor plane disturb S Puthenthermadam, D Dutta, L Pham US Patent 10,529,435, 2020 | 15 | 2020 |
| Management of electric arc furnace dust through a basic oxygen furnace KS Price, K Lenti US Patent 6,562,096, 2003 | 15* | 2003 |
| State-dependent read compensation Z Zhou, G Liang, GJ Hemink, D Lee, C Gorla, S Puthenthermadam, ... US Patent 9,805,809, 2017 | 11 | 2017 |
| Solid Electrolyte Memory for Flexible Electronics SR Baliga, SCP Thermadam, D Kamalanathan, DR Allee, MN Kozicki Non-Volatile Memory Technology Symposium, 2007. NVMTS'07, 86-90, 2007 | 11 | 2007 |
| Dynamic anneal characteristics for annealing non-volatile memory N Kankani, L Truong, S Puthenthermadam, D Dutta US Patent 10,467,134, 2019 | 10 | 2019 |
| Non-volatile storage system with defect detetction and early programming termination G Shah, D Dutta, S Puthenthermadam US Patent 9,570,160, 2017 | 8 | 2017 |
| Overheat prevention for annealing non-volatile memory N Kankani, N Ye, S Upadhyayula, S Puthenthermadam, D Dutta US Patent 9,761,290, 2017 | 7 | 2017 |
| Source side precharge and boosting improvement for reverse order program S Puthenthermadam, YC Lien, HY Tseng US Patent 11,081,162, 2021 | 5 | 2021 |
| Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells V Prabhakar, L Hinh, K Shakeri, SC Puthenthermadam US Patent 9,378,821, 2016 | 5 | 2016 |
