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| Ultralow-current-density and bias-field-free spin-transfer nano-oscillator Z Zeng, G Finocchio, B Zhang, PK Amiri, JA Katine, IN Krivorotov, Y Huai, ... Scientific reports 3, 1426, 2013 | 191 | 2013 |
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| Te‐Doped Black Phosphorus Field‐Effect Transistors B Yang, B Wan, Q Zhou, Y Wang, W Hu, W Lv, Q Chen, Z Zeng, F Wen, ... Advanced Materials 28 (42), 9408-9415, 2016 | 149 | 2016 |
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| Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory H Zhao, A Lyle, Y Zhang, PK Amiri, G Rowlands, Z Zeng, J Katine, H Jiang, ... Journal of Applied Physics 109 (7), 07C720, 2011 | 144 | 2011 |
| High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy Z Zeng, PK Amiri, IN Krivorotov, H Zhao, G Finocchio, JP Wang, JA Katine, ... ACS nano 6 (7), 6115-6121, 2012 | 132 | 2012 |
| Giant spin-torque diode sensitivity in the absence of bias magnetic field B Fang, M Carpentieri, X Hao, H Jiang, JA Katine, IN Krivorotov, B Ocker, ... Nature communications 7 (1), 1-7, 2016 | 121 | 2016 |
| Liquid‐Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications C Hao, F Wen, J Xiang, S Yuan, B Yang, L Li, W Wang, Z Zeng, L Wang, ... Advanced Functional Materials 26 (12), 2016-2024, 2016 | 114 | 2016 |
| Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers GE Rowlands, T Rahman, JA Katine, J Langer, A Lyle, H Zhao, JG Alzate, ... Applied Physics Letters 98 (10), 102509, 2011 | 103 | 2011 |
| The detection of H2S at room temperature by using individual indium oxide nanowire transistors Z Zeng, K Wang, Z Zhang, J Chen, W Zhou Nanotechnology 20 (4), 045503, 2008 | 91 | 2008 |
| Enhanced stability of black phosphorus field-effect transistors with SiO2 passivation B Wan, B Yang, Y Wang, J Zhang, Z Zeng, Z Liu, W Wang Nanotechnology 26 (43), 435702, 2015 | 77 | 2015 |
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| Sub-200 ps spin transfer torque switching in in-plane magnetic tunnel junctions with interface perpendicular anisotropy H Zhao, B Glass, PK Amiri, A Lyle, Y Zhang, YJ Chen, G Rowlands, ... Journal of Physics D: Applied Physics 45 (2), 025001, 2011 | 68 | 2011 |
| Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM PK Amiri, ZM Zeng, P Upadhyaya, G Rowlands, H Zhao, IN Krivorotov, ... IEEE Electron Device Letters 32 (1), 57-59, 2010 | 66 | 2010 |
| Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells ZM Zeng, P Khalili Amiri, G Rowlands, H Zhao, IN Krivorotov, JP Wang, ... Applied Physics Letters 98 (7), 072512, 2011 | 62 | 2011 |
| Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates T Li, B Wan, G Du, B Zhang, Z Zeng Aip Advances 5 (5), 057102, 2015 | 57 | 2015 |
| Sulfur-doped black phosphorus field-effect transistors with enhanced stability W Lv, B Yang, B Wang, W Wan, Y Ge, R Yang, C Hao, J Xiang, B Zhang, ... ACS applied materials & interfaces 10 (11), 9663-9668, 2018 | 55 | 2018 |
| Magnetic/nonmagnetic/magnetic tunnel junction based on hybrid organic Langmuir-Blodgett-films TX Wang, HX Wei, ZM Zeng, XF Han, ZM Hong, GQ Shi Applied physics letters 88 (24), 242505, 2006 | 54 | 2006 |
