Kondekar Pravin N.
Kondekar Pravin N.
Indian Institute of Information Technology Design and Manufacturing , Jabalpur (MP) India
Verified email at iiitdmj.ac.in
Title
Cited by
Cited by
Year
A charge-plasma-based dielectric-modulated junctionless TFET for biosensor label-free detection
D Singh, S Pandey, K Nigam, D Sharma, DS Yadav, P Kondekar
IEEE Transactions on Electron Devices 64 (1), 271-278, 2016
582016
Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement
BR Raad, K Nigam, D Sharma, PN Kondekar
Superlattices and Microstructures 94, 138-146, 2016
572016
A new design approach of dopingless tunnel FET for enhancement of device characteristics
BR Raad, S Tirkey, D Sharma, P Kondekar
IEEE Transactions on Electron Devices 64 (4), 1830-1836, 2017
532017
Drain work function engineered doping-less charge plasma TFET for ambipolar suppression and RF performance improvement: a proposal, design, and investigation
BR Raad, D Sharma, P Kondekar, K Nigam, DS Yadav
IEEE Transactions on Electron Devices 63 (10), 3950-3957, 2016
502016
Dielectric and work function engineered TFET for ambipolar suppression and RF performance enhancement
B Raad, K Nigam, D Sharma, P Kondekar
Electronics Letters 52 (9), 770-772, 2016
442016
Design and analysis of polarity controlled electrically doped tunnel FET with bandgap engineering for analog/RF applications
PN Kondekar, K Nigam, S Pandey, D Sharma
IEEE Transactions on Electron Devices 64 (2), 412-418, 2016
392016
Short-term effects of sulphate and chloride on the concrete containing coal bottom ash as supplementary cementitious material
SA Mangi, MHW Ibrahim, N Jamaluddin, MF Arshad, RP Jaya
Engineering Science and Technology, an International Journal 22 (2), 515-522, 2019
34*2019
DC characteristics and analog/RF performance of novel polarity control GaAs-Ge based tunnel field effect transistor
K Nigam, P Kondekar, D Sharma
Superlattices and Microstructures 92, 224-231, 2016
342016
A barrier controlled charge plasma-based TFET with gate engineering for ambipolar suppression and RF/linearity performance improvement
K Nigam, S Pandey, PN Kondekar, D Sharma, PK Parte
IEEE Transactions on Electron Devices 64 (6), 2751-2757, 2017
302017
Analysis of breakdown voltage and on resistance of super junction power MOSFET CoolMOS/sup TM/using theory of novel voltage sustaining layer
PN Kondekar, CD Parikh, MB Patil
2002 IEEE 33rd Annual IEEE Power Electronics Specialists Conference …, 2002
292002
Effect of interface trap charges on performance variation of heterogeneous gate dielectric junctionless-TFET
S Gupta, K Nigam, S Pandey, D Sharma, PN Kondekar
IEEE Transactions on Electron Devices 64 (11), 4731-4737, 2017
282017
Approach for ambipolar behaviour suppression in tunnel FET by workfunction engineering
K Nigam, D Sharma
Micro & Nano Letters 11 (8), 460-464, 2016
282016
Dopingless super-steep impact ionisation MOS (dopingless-IMOS) based on work-function engineering
S Singh, PN Kondekar
Electronics letters 50 (12), 888-889, 2014
272014
Impact of interface trap charges on performance of electrically doped tunnel FET with heterogeneous gate dielectric
P Venkatesh, K Nigam, S Pandey, D Sharma, PN Kondekar
IEEE Transactions on Device and Materials Reliability 17 (1), 245-252, 2017
252017
Label-free biosensor using nanogap embedded dielectric modulated schottky tunneling source impact ionization MOS
S Singh, PN Kondekar, NK Jaiswal
Microelectronic Engineering 149, 129-134, 2016
212016
Study of the degradation of the breakdown voltage of a super-junction power MOSFET due to charge imbalance
PN Kondekar, HS Oh, YB Kim
Journal of the Korean Physical Society 48 (4), 624-630, 2006
202006
Suppression of ambipolar leakage current in Schottky barrier MOSFET using gate engineering
S Kale, PN Kondekar
Electronics letters 51 (19), 1536-1538, 2015
182015
A novel dynamically configurable electrostatically doped silicon nanowire impact ionization MOS
S Singh, PN Kondekar
Superlattices and Microstructures 88, 695-703, 2015
172015
Broadband rectenna for radio frequency energy harvesting application
S Agrawal, MS Parihar, PN Kondekar
IETE Journal of Research 64 (3), 347-353, 2018
152018
A new approach for design and investigation of junction-less tunnel FET using electrically doped mechanism
K Nigam, P Kondekar, D Sharma, BR Raad
Superlattices and Microstructures 98, 1-7, 2016
152016
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