| A charge-plasma-based dielectric-modulated junctionless TFET for biosensor label-free detection D Singh, S Pandey, K Nigam, D Sharma, DS Yadav, P Kondekar IEEE Transactions on Electron Devices 64 (1), 271-278, 2016 | 50 | 2016 |
| Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement BR Raad, K Nigam, D Sharma, PN Kondekar Superlattices and Microstructures 94, 138-146, 2016 | 45 | 2016 |
| A new design approach of dopingless tunnel FET for enhancement of device characteristics BR Raad, S Tirkey, D Sharma, P Kondekar IEEE Transactions on Electron Devices 64 (4), 1830-1836, 2017 | 44 | 2017 |
| Drain work function engineered doping-less charge plasma TFET for ambipolar suppression and RF performance improvement: a proposal, design, and investigation BR Raad, D Sharma, P Kondekar, K Nigam, DS Yadav IEEE Transactions on Electron Devices 63 (10), 3950-3957, 2016 | 44 | 2016 |
| Dielectric and work function engineered TFET for ambipolar suppression and RF performance enhancement B Raad, K Nigam, D Sharma, P Kondekar Electronics Letters 52 (9), 770-772, 2016 | 37 | 2016 |
| DC characteristics and analog/RF performance of novel polarity control GaAs-Ge based tunnel field effect transistor K Nigam, P Kondekar, D Sharma Superlattices and Microstructures 92, 224-231, 2016 | 32 | 2016 |
| Design and analysis of polarity controlled electrically doped tunnel FET with bandgap engineering for analog/RF applications PN Kondekar, K Nigam, S Pandey, D Sharma IEEE Transactions on Electron Devices 64 (2), 412-418, 2016 | 31 | 2016 |
| Analysis of breakdown voltage and on resistance of super junction power MOSFET CoolMOS/sup TM/using theory of novel voltage sustaining layer PN Kondekar, CD Parikh, MB Patil 2002 IEEE 33rd Annual IEEE Power Electronics Specialists Conference …, 2002 | 29 | 2002 |
| A barrier controlled charge plasma-based TFET with gate engineering for ambipolar suppression and RF/linearity performance improvement K Nigam, S Pandey, PN Kondekar, D Sharma, PK Parte IEEE Transactions on Electron Devices 64 (6), 2751-2757, 2017 | 27 | 2017 |
| Dopingless super-steep impact ionisation MOS (dopingless-IMOS) based on work-function engineering S Singh, PN Kondekar Electronics letters 50 (12), 888-889, 2014 | 24 | 2014 |
| Approach for ambipolar behaviour suppression in tunnel FET by workfunction engineering K Nigam, D Sharma Micro & Nano Letters 11 (8), 460-464, 2016 | 21 | 2016 |
| Effect of interface trap charges on performance variation of heterogeneous gate dielectric junctionless-TFET S Gupta, K Nigam, S Pandey, D Sharma, PN Kondekar IEEE Transactions on Electron Devices 64 (11), 4731-4737, 2017 | 20 | 2017 |
| Study of the degradation of the breakdown voltage of a super-junction power MOSFET due to charge imbalance PN Kondekar, HS Oh, YB Kim Journal of the Korean Physical Society 48 (4), 624-630, 2006 | 19 | 2006 |
| Short-term effects of sulphate and chloride on the concrete containing coal bottom ash as supplementary cementitious material SA Mangi, MHW Ibrahim, N Jamaluddin, MF Arshad, RP Jaya Engineering Science and Technology, an International Journal 22 (2), 515-522, 2019 | 18* | 2019 |
| Impact of interface trap charges on performance of electrically doped tunnel FET with heterogeneous gate dielectric P Venkatesh, K Nigam, S Pandey, D Sharma, PN Kondekar IEEE Transactions on Device and Materials Reliability 17 (1), 245-252, 2017 | 17 | 2017 |
| Label-free biosensor using nanogap embedded dielectric modulated schottky tunneling source impact ionization MOS S Singh, PN Kondekar, NK Jaiswal Microelectronic Engineering 149, 129-134, 2016 | 17 | 2016 |
| A novel dynamically configurable electrostatically doped silicon nanowire impact ionization MOS S Singh, PN Kondekar Superlattices and Microstructures 88, 695-703, 2015 | 16 | 2015 |
| Suppression of ambipolar leakage current in Schottky barrier MOSFET using gate engineering S Kale, PN Kondekar Electronics letters 51 (19), 1536-1538, 2015 | 16 | 2015 |
| A new approach for design and investigation of junction-less tunnel FET using electrically doped mechanism K Nigam, P Kondekar, D Sharma, BR Raad Superlattices and Microstructures 98, 1-7, 2016 | 14 | 2016 |
| Ferroelectric Schottky barrier tunnel FET with gate-drain underlap: Proposal and investigation S Kale, PN Kondekar Superlattices and Microstructures 89, 225-230, 2016 | 13 | 2016 |
Sumit KalePh.D. ( Indian Institute of Information Technology Design & Manufacturing Jabalpur)Verified email at iiitdmj.ac.in
