Kondekar Pravin N.
Kondekar Pravin N.
Indian Institute of Information Technology Design and Manufacturing , Jabalpur (MP) India
Verified email at iiitdmj.ac.in
Title
Cited by
Cited by
Year
A charge-plasma-based dielectric-modulated junctionless TFET for biosensor label-free detection
D Singh, S Pandey, K Nigam, D Sharma, DS Yadav, P Kondekar
IEEE Transactions on Electron Devices 64 (1), 271-278, 2016
502016
Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement
BR Raad, K Nigam, D Sharma, PN Kondekar
Superlattices and Microstructures 94, 138-146, 2016
452016
A new design approach of dopingless tunnel FET for enhancement of device characteristics
BR Raad, S Tirkey, D Sharma, P Kondekar
IEEE Transactions on Electron Devices 64 (4), 1830-1836, 2017
442017
Drain work function engineered doping-less charge plasma TFET for ambipolar suppression and RF performance improvement: a proposal, design, and investigation
BR Raad, D Sharma, P Kondekar, K Nigam, DS Yadav
IEEE Transactions on Electron Devices 63 (10), 3950-3957, 2016
442016
Dielectric and work function engineered TFET for ambipolar suppression and RF performance enhancement
B Raad, K Nigam, D Sharma, P Kondekar
Electronics Letters 52 (9), 770-772, 2016
372016
DC characteristics and analog/RF performance of novel polarity control GaAs-Ge based tunnel field effect transistor
K Nigam, P Kondekar, D Sharma
Superlattices and Microstructures 92, 224-231, 2016
322016
Design and analysis of polarity controlled electrically doped tunnel FET with bandgap engineering for analog/RF applications
PN Kondekar, K Nigam, S Pandey, D Sharma
IEEE Transactions on Electron Devices 64 (2), 412-418, 2016
312016
Analysis of breakdown voltage and on resistance of super junction power MOSFET CoolMOS/sup TM/using theory of novel voltage sustaining layer
PN Kondekar, CD Parikh, MB Patil
2002 IEEE 33rd Annual IEEE Power Electronics Specialists Conference …, 2002
292002
A barrier controlled charge plasma-based TFET with gate engineering for ambipolar suppression and RF/linearity performance improvement
K Nigam, S Pandey, PN Kondekar, D Sharma, PK Parte
IEEE Transactions on Electron Devices 64 (6), 2751-2757, 2017
272017
Dopingless super-steep impact ionisation MOS (dopingless-IMOS) based on work-function engineering
S Singh, PN Kondekar
Electronics letters 50 (12), 888-889, 2014
242014
Approach for ambipolar behaviour suppression in tunnel FET by workfunction engineering
K Nigam, D Sharma
Micro & Nano Letters 11 (8), 460-464, 2016
212016
Effect of interface trap charges on performance variation of heterogeneous gate dielectric junctionless-TFET
S Gupta, K Nigam, S Pandey, D Sharma, PN Kondekar
IEEE Transactions on Electron Devices 64 (11), 4731-4737, 2017
202017
Study of the degradation of the breakdown voltage of a super-junction power MOSFET due to charge imbalance
PN Kondekar, HS Oh, YB Kim
Journal of the Korean Physical Society 48 (4), 624-630, 2006
192006
Short-term effects of sulphate and chloride on the concrete containing coal bottom ash as supplementary cementitious material
SA Mangi, MHW Ibrahim, N Jamaluddin, MF Arshad, RP Jaya
Engineering Science and Technology, an International Journal 22 (2), 515-522, 2019
18*2019
Impact of interface trap charges on performance of electrically doped tunnel FET with heterogeneous gate dielectric
P Venkatesh, K Nigam, S Pandey, D Sharma, PN Kondekar
IEEE Transactions on Device and Materials Reliability 17 (1), 245-252, 2017
172017
Label-free biosensor using nanogap embedded dielectric modulated schottky tunneling source impact ionization MOS
S Singh, PN Kondekar, NK Jaiswal
Microelectronic Engineering 149, 129-134, 2016
172016
A novel dynamically configurable electrostatically doped silicon nanowire impact ionization MOS
S Singh, PN Kondekar
Superlattices and Microstructures 88, 695-703, 2015
162015
Suppression of ambipolar leakage current in Schottky barrier MOSFET using gate engineering
S Kale, PN Kondekar
Electronics letters 51 (19), 1536-1538, 2015
162015
A new approach for design and investigation of junction-less tunnel FET using electrically doped mechanism
K Nigam, P Kondekar, D Sharma, BR Raad
Superlattices and Microstructures 98, 1-7, 2016
142016
Ferroelectric Schottky barrier tunnel FET with gate-drain underlap: Proposal and investigation
S Kale, PN Kondekar
Superlattices and Microstructures 89, 225-230, 2016
132016
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