| Incorporation of SnO 2 nanoparticles in PMMA for performance enhancement of a transparent organic resistive memory device PK Sarkar, S Bhattacharjee, M Prajapat, A Roy RSC Advances 5 (128), 105661-105667, 2015 | 101* | 2015 |
| Nonvolatile resistive switching and synaptic characteristics of lead-free all-inorganic perovskite-based flexible memristive devices for neuromorphic systems A Siddik, PK Haldar, T Paul, U Das, A Barman, A Roy, PK Sarkar Nanoscale 13 (19), 8864-8874, 2021 | 60 | 2021 |
| Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbI3–xClx Perovskite for RRAM Application U Das, D Das, B Paul, T Rabha, S Pattanayak, A Kanjilal, S Bhattacharjee, ... ACS Applied Materials & Interfaces 12 (37), 41718-41727, 2020 | 53 | 2020 |
| Compliance Current-Dependent Dual-Functional Bipolar and Threshold Resistive Switching in All-Inorganic Rubidium Lead-Bromide Perovskite-Based Flexible Device U Das, A Nyayban, B Paul, A Barman, P Sarkar, A Roy ACS Applied Electronic Materials 2 (5), 1343-1351, 2020 | 51 | 2020 |
| Uniform, large-scale growth of WS2 nanodomains via CVD technique for stable non-volatile RRAM application U Das, S Bhattacharjee, B Mahato, M Prajapat, P Sarkar, A Roy Materials Science in Semiconductor Processing 107, 104837, 2020 | 47 | 2020 |
| Multilevel programming in Cu/NiO y/NiO x/Pt unipolar resistive switching devices PK Sarkar, S Bhattacharjee, A Barman, A Kanjilal, A Roy Nanotechnology 27 (43), 435701, 2016 | 45 | 2016 |
| Electrical reliability, multilevel data storage and mechanical stability of MoS2-PMMA nanocomposite-based non-volatile memory device S Bhattacharjee, PK Sarkar, M Prajapat, A Roy Journal of Physics D: Applied Physics 50 (26), 265103, 2017 | 41 | 2017 |
| Structural and electrical properties of metal–ferroelectric–insulator–semiconductor structure of Al/SrBi2Ta2O9/HfO2/Si using HfO2 as buffer layer A Roy, A Dhar, SK Ray Journal of Physics D: Applied Physics, 2008 | 41 | 2008 |
| Halide perovskite two-terminal analog memristor capable of photo-activated synaptic weight modulation for neuromorphic computing U Das, P Sarkar, B Paul, A Roy Applied Physics Letters 118 (18), 2021 | 37 | 2021 |
| Stable charge retention in graphene-MoS2 assemblies for resistive switching effect in ultra-thin super-flexible organic memory devices S Bhattacharjee, U Das, PK Sarkar, A Roy Organic Electronics 58, 145-152, 2018 | 36 | 2018 |
| Multilevel resistance state of Cu/La2O3/Pt forming-free switching devices PK Sarkar, M Prajapat, A Barman, S Bhattacharjee, A Roy Journal of Materials Science 51, 4411-4418, 2016 | 36 | 2016 |
| A multi-level bipolar memristive device based on visible light sensing MoS2 thin film U Das, S Bhattacharjee, PK Sarkar, A Roy Materials Research Express 6 (7), 075037, 2019 | 34 | 2019 |
| Growth and temperature dependent photoluminescence characteristics of ZnO tetrapods N Roy, A Roy Ceramics International 41 (3), 4154-4160, 2015 | 34 | 2015 |
| Improvement of the Resistive Switching Characteristics upon Halide Mixing in an All-Inorganic RbPbI3 Perovskite Polymer Composite Based Flexible Device U Das, A Dehingia, B Paul, PK Sarkar, A Roy The Journal of Physical Chemistry C 125 (24), 13610-13618, 2021 | 29 | 2021 |
| Improvement of reliability of polymer nanocomposite based transparent memory device by oxygen vacancy rich ZnO nanorods S Bhattacharjee, PK Sarkar, N Roy, A Roy Microelectronic Engineering 164, 53-58, 2016 | 28 | 2016 |
| Interface and electrical properties of ultra-thin HfO 2 film grown by radio frequency sputtering M Nath, A Roy Physica B: Condensed Matter 482, 43-50, 2016 | 28 | 2016 |
| Temperature dependent leakage current behavior of pulsed laser ablated SrBi2Ta2O9 thin films A Roy, A Dhar, SK Ray Journal of Applied Physics, 2009 | 28 | 2009 |
| Thickness and temperature dependent electrical characteristics of nano-crystalline BaxSr1-xTiO3 thin films B Panda, A Roy, A Dhar, SK Ray Journal of Applied Physics, 2007 | 28 | 2007 |
| Enhancement of data storage capability in a bilayer oxide-based memristor for wearable electronic applications A Siddik, PK Haldar, P Garu, S Bhattacharjee, U Das, A Barman, A Roy, ... Journal of Physics D: Applied Physics 53 (29), 295103, 2020 | 24 | 2020 |
| Influence of nanoscale charge trapping layer on the memory and synaptic characteristics of a novel rubidium lead chloride quantum dot based memristor U Das, PK Sarkar, D Das, B Paul, A Roy Advanced Electronic Materials 8 (5), 2101015, 2022 | 23 | 2022 |
Samit K RayDepartment of Physics, IIT KharagpurVerified email at phy.iitkgp.ac.in
