| A new analytical tool for the study of radiation effects in 3-D integrated circuits: Near-zero field magnetoresistance spectroscopy JP Ashton, SJ Moxim, PM Lenahan, CG McKay, RJ Waskiewicz, KJ Myers, ... IEEE Transactions on Nuclear Science 66 (1), 428-436, 2018 | 31 | 2018 |
| Observation of Radiation Induced Leakage Current Defects in MOS Oxides with Multi-Frequency Electrically Detected Magnetic Resonance and Near-Zero Field Magnetoresistance SJ Moxim, JP Ashton, PM Lenahan, ME Flatté, NJ Harmon, SW King IEEE Transactions on Nuclear Science, 2019 | 23 | 2019 |
| Extraction of isotropic electron-nuclear hyperfine coupling constants of paramagnetic point defects from near-zero field magnetoresistance spectra via least squares fitting to … EB Frantz, NJ Harmon, SR McMillan, SJ Moxim, ME Flatté, PM Lenahan Journal of applied physics 128 (12), 2020 | 21 | 2020 |
| A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO₂ MOSFETs via Electrically Detected Magnetic Resonance FV Sharov, SJ Moxim, GS Haase, DR Hughart, PM Lenahan IEEE Transactions on Nuclear Science 69 (3), 208-215, 2022 | 17 | 2022 |
| A quantitative model for the bipolar amplification effect: A new method to determine semiconductor/oxide interface state densities JP Ashton, SJ Moxim, AD Purcell, PM Lenahan, JT Ryan Journal of Applied Physics 130 (13), 2021 | 11 | 2021 |
| Electrically detected magnetic resonance and near-zero field magnetoresistance in 28Si/28SiO2 EB Frantz, DJ Michalak, NJ Harmon, EM Henry, SJ Moxim, ME Flatté, ... Journal of applied physics 130 (6), 2021 | 10 | 2021 |
| Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2 transistors SJ Moxim, FV Sharov, DR Hughart, GS Haase, CG McKay, PM Lenahan Applied Physics Letters 120 (6), 2022 | 9 | 2022 |
| Probing the Atomic-Scale Mechanisms of Time-Dependent Dielectric Breakdown in Si/SiO2 MOSFETs (June 2022) FV Sharov, SJ Moxim, GS Haase, DR Hughart, CG McKay, PM Lenahan IEEE Transactions on Device and Materials Reliability 22 (3), 322-331, 2022 | 5 | 2022 |
| Combining electrically detected magnetic resonance techniques to study atomic-scale defects generated by hot-carrier stressing in HfO2/SiO2/Si transistors SJ Moxim, JP Ashton, MA Anders, JT Ryan Journal of Applied Physics 133 (14), 145702, 2023 | 4 | 2023 |
| Near-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability SJ Moxim, FV Sharov, DR Hughart, GS Haase, CG McKay, EB Frantz, ... Review of Scientific Instruments 93 (11), 2022 | 3 | 2022 |
| Understanding the Initial Stages of Time Dependent Dielectric Breakdown in Si/SiO2 MOSFETs Utilizing EDMR and NZFMR FV Sharov, SJ Moxim, PM Lenahan, DR Hughart, GS Haase, CG McKay 2021 IEEE International Integrated Reliability Workshop (IIRW), 1-5, 2021 | 3 | 2021 |
| Spectroscopy of photoionization from the singlet state in nitrogenvacancy centers in diamond SM Blakley, TT Mai, SJ Moxim, JT Ryan, AJ Biacchi, ARH Walker, ... arXiv preprint arXiv:2301.10383, 2023 | 2 | 2023 |
| Intermediate spin pair relaxation through modulation of isotropic hyperfine interaction in frequency-swept spin-dependent recombination in 4H–SiC JP Ashton, BR Manning, SJ Moxim, FV Sharov, PM Lenahan, JT Ryan Applied Physics Letters 120 (6), 2022 | 2 | 2022 |
| Exploring Atomic-Scale Defects Related to Time-Dependent Dielectric Breakdown with Spin-Dependent Measurements S Moxim The Pennsylvania State University, 2022 | 1 | 2022 |
| Electrically Detected Magnetic Resonance Study of High-Field Stress Induced Si/SiO2 Interface Defects SJ Moxim, PM Lenahan, FV Sharov, GS Haase, DR Hughart 2020 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2020 | 1 | 2020 |
| Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications SJ Moxim, NJ Harmon, KJ Myers, JP Ashton, EB Frantz, ME Flatté, ... Journal of Applied Physics 135 (15), 2024 | | 2024 |
| Photoionization spectroscopy of the long-lived 1E singlet state of NV centers in diamond R McMichael, S Blakley, T Mai, S Moxim, J Ryan, A Biacchi, ... Bulletin of the American Physical Society, 2024 | | 2024 |
| Understanding tunable near-zero-field magnetoresistance in Si MOSFETs S Moxim, N Harmon, K Myers, J Ashton, E Frantz, M Flatté, P Lenahan, ... Bulletin of the American Physical Society, 2024 | | 2024 |
| Relationship between Trapping Centers, Charge Pumping, and Leakage Currents in Hot-Carrier-Stressed Si/SiO2/HfO2 Transistors SJ Moxim, JP Ashton, MA Anders, NW Lawson, JT Ryan 2023 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2023 | | 2023 |
| Near zero field magnetoresistance spectroscopy in solid state electronic devices P Lenahan, E Frantz, S King, F Sharov, S Moxim, K Myers, N Harmon, ... Spintronics XVI, PC126561U, 2023 | | 2023 |
P.M. LenahanDistinguished Professor of Engineering Science and Mecahnics and Co-Chair, Inter-College GraduateVerified email at engr.psu.edu
