Saquib Shamim
Saquib Shamim
Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
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Cited by
Cited by
Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si: P δ layers
S Shamim, S Mahapatra, C Polley, MY Simmons, A Ghosh
Physical Review B 83 (23), 233304, 2011
Ultra-low noise atomic scale structures for quantum circuitry in silicon
S Shamim, B Weber, DW Thompson, MY Simmons, A Ghosh
Nano Letters 16 (9), 5779-5784, 2016
Interacting topological edge channels
J Strunz, J Wiedenmann, C Fleckenstein, L Lunczer, W Beugeling, ...
Nature Physics 16 (1), 83-88, 2020
Number‐Resolved Single‐Photon Detection with Ultralow Noise van der Waals Hybrid
K Roy, T Ahmed, H Dubey, TP Sai, R Kashid, S Maliakal, K Hsieh, ...
Advanced Materials 30 (2), 1704412, 2018
Spontaneous Breaking of Time-Reversal Symmetry in Strongly Interacting Two-Dimensional Electron Layers in Silicon and Germanium
S Shamim, S Mahapatra, G Scappucci, WM Klesse, MY Simmons, ...
Physical Review Letters 112 (23), 236602, 2014
High mobility HgTe microstructures for quantum spin Hall studies
K Bendias, S Shamim, O Herrmann, A Budewitz, P Shekhar, P Leubner, ...
Nano letters 18 (8), 4831-4836, 2018
Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers
S Shamim, S Mahapatra, G Scappucci, WM Klesse, MY Simmons, ...
Scientific Reports 7, 46670, 2017
Thermoelectric properties of electrostatically tunable antidot lattices
S Goswami, C Siegert, S Shamim, M Pepper, I Farrer, DA Ritchie, ...
Applied Physics Letters 97 (13), 132104, 2010
Quantum anomalous Hall effect in Mn doped HgTe quantum wells
A Budewitz, K Bendias, P Leubner, T Khouri, S Shamim, S Wiedmann, ...
arXiv preprint arXiv:1706.05789, 2017
Emergent quantum Hall effects below mT in a two-dimensional topological insulator
S Shamim, W Beugeling, J Böttcher, P Shekhar, A Budewitz, P Leubner, ...
arXiv preprint arXiv:2004.00091, 2020
Temperature dependence of the quantized spin Hall conductance in high mobility HgTe quantum wells
S Shamim, P Shekhar, K Bendias, A Budewitz, R Schlereth, P Leubner, ...
APS 2018, F08. 002, 2018
A new wet etching method and a low-temperature gate process for fabrication of high-quality HgTe microstructures
K Bendias, V Mueller, P Shekhar, S Shamim, H Buhmann, ...
Verhandlungen der Deutschen Physikalischen Gesellschaft, 2017
Low-frequency conductance fluctuations in Si: P and Ge: P δ-layers
S Shamim, S Mahapatra, G Scappucci, WM Klesse, MY Simmons, ...
APS 2016, P45. 009, 2016
Ultra-low noise atomically patterned nanostructures in Si
S Shamim, B Weber, MY Simmons, A Ghosh
APS 2015, F13. 011, 2015
Spontaneously broken time reversal symmetry in strongly interacting two dimensional electron systems in Si and Ge
S Shamim, S Mahapatra, G Scappucci, WM Klesse, MY Simmons, ...
APS 2014, W50. 008, 2014
Origin of noise in two dimensionally doped silicon and germanium
S Shamim, S Mahapatra, G Scappucci, C Polley, MY Simmons, A Ghosh
AIP Conference Proceedings 1566 (1), 413-414, 2013
Electrostatic modulation of periodic potentials in a two-dimensional electron gas: From antidot lattice to quantum dot lattice
S Goswami, MA Aamir, S Shamim, C Siegert, M Pepper, I Farrer, ...
AIP Conference Proceedings 1566 (1), 257-258, 2013
Molecular Beam Epitaxy
LW Molenkamp, K Brunner, A Berger, H Buhmann, C Gould, ...
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