Basanta Roul

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S.B. KrupanidhiIndian institute of scienceVerified email at mrc.iisc.ernet.in
Mahesh KUMARProfessor, Indian Institute of Technology JodhpurVerified email at iitj.ac.in
Thirumaleshwara N BhatDepartment of materials science Mangalore university-IndiaVerified email at mangaloreuniversity.ac.in
Mohana RajpalkeSenior Researcher at Microsoft, CopenhagenVerified email at microsoft.com
Greeshma Chandan KamalapuramIntel CorporationVerified email at intel.com
Arun Malla ChowdhuryResearch Associate, Materials Research Centre, Indian Institute of Science, BangaloreVerified email at iisc.ac.in
Rohit Kumar PantPostdoctoral Research Associate, University of MarylandVerified email at umd.edu
Deependra Kumar SinghAssistant Professor at National Institute of Technology RaipurVerified email at iisc.ac.in
lokesh mohanTezpur UniversityVerified email at alumni.iitm.ac.in
Arjun ShettyYield Development Engineer, Intel CorporationVerified email at intel.com
Sundaresan AthinarayananProfessor in Chemistry and Physics of Materials Unit, JNCASRVerified email at jncasr.ac.in
Saraswathi ChirakkaraWomen ScientistVerified email at jncasr.ac.in
Kishan Lal KumawatPostdoctoral Scholar- NC State University, North Carolina PhD- Indian Institute of Science BengaluruVerified email at ncsu.edu
Samit K RayDepartment of Physics, IIT KharagpurVerified email at phy.iitkgp.ac.in
Dr. Shruti NarayananDST-NPDF, IIT MadrasVerified email at smail.iitm.ac.in

Basanta Roul

Senior Researcher at Central Research Laboratory-BEL and Materials Research Centre-IISc

Verified email at iisc.ac.in

Optoelectronics Devices Molecular Beam Epitaxy (MBE)Light Emitting Diodes (LEDs)Photodetectors


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Binary group III-nitride based heterostructures: band offsets and transport properties B Roul, M Kumar, MK Rajpalke, TN Bhat, SB Krupanidhi Journal of Physics D: Applied Physics 48 (42), 423001, 2015	85	2015
Self-powered, broad band, and ultrafast InGaN-based photodetector AM Chowdhury, G Chandan, R Pant, B Roul, DK Singh, KK Nanda, ... ACS applied materials & interfaces 11 (10), 10418-10425, 2019	69	2019
Wafer-scale synthesis of a uniform film of few-layer MoS2 on GaN for 2D heterojunction ultraviolet photodetector N Goel, R Kumar, B Roul, M Kumar, SB Krupanidhi Journal of Physics D: Applied Physics 51 (37), 374003, 2018	64	2018
Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes A Shetty, B Roul, S Mukundan, L Mohan, G Chandan, KJ Vinoy, ... AIP Advances 5 (9), 2015	62	2015
Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films B Roul, MK Rajpalke, TN Bhat, M Kumar, AT Kalghatgi, SB Krupanidhi, ... Applied Physics Letters 99 (16), 2011	57	2011
A high-performance hydrogen sensor based on a reverse-biased MoS2/GaN heterojunction N Goel, R Kumar, SK Jain, S Rajamani, B Roul, G Gupta, M Kumar, ... Nanotechnology 30 (31), 314001, 2019	52	2019
Defect-Mediated Transport in Self-Powered, Broadband, and Ultrafast Photoresponse of a MoS₂/AlN/Si-Based Photodetector DK Singh, R Pant, AM Chowdhury, B Roul, KK Nanda, SB Krupanidhi ACS Applied Electronic Materials 2 (4), 944-953, 2020	50	2020
Toward a Fast and Highly Responsive SnSe₂-Based Photodiode by Exploiting the Mobility of the Counter Semiconductor EP Mukhokosi, B Roul, SB Krupanidhi, KK Nanda ACS applied materials & interfaces 11 (6), 6184-6194, 2019	48	2019
Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy S Mukundan, L Mohan, G Chandan, B Roul, SB Krupanidhi Journal of Applied Physics 116 (20), 2014	47	2014
Highly Responsive, Self-Powered a-GaN Based UV-A Photodetectors Driven by Unintentional Asymmetrical Electrodes R Pant, DK Singh, AM Chowdhury, B Roul, KK Nanda, SB Krupanidhi ACS Applied Electronic Materials 2 (3), 769-779, 2020	41	2020
Next-generation self-powered and ultrafast photodetectors based on III-nitride hybrid structures R Pant, DK Singh, AM Chowdhury, B Roul, KK Nanda, SB Krupanidhi APL Materials 8 (2), 2020	38	2020
Enhanced UV detection by non-polar epitaxial GaN films S Mukundan, B Roul, A Shetty, G Chandan, L Mohan, SB Krupanidhi AIP Advances 5 (12), 2015	35	2015
In-Plane Anisotropic Photoconduction in Nonpolar Epitaxial a-Plane GaN R Pant, A Shetty, G Chandan, B Roul, KK Nanda, SB Krupanidhi ACS Applied Materials & Interfaces 10 (19), 16918-16923, 2018	32	2018
Temperature-Dependent Electrical Transport and Optoelectronic Properties of SnS₂/p-Si Heterojunction DK Singh, R Pant, B Roul, AM Chowdhury, KK Nanda, SB Krupanidhi ACS Applied Electronic Materials 2 (7), 2155-2163, 2020	31	2020
Transport and infrared photoresponse properties of InN nanorods/Si heterojunction M Kumar, TN Bhat, MK Rajpalke, B Roul, AT Kalghatgi, SB Krupanidhi Nanoscale research letters 6, 1-6, 2011	31	2011
Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE M Kumar, B Roul, TN Bhat, MK Rajpalke, P Misra, LM Kukreja, N Sinha, ... Materials Research Bulletin 45 (11), 1581-1585, 2010	31	2010
Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy TN Bhat, MK Rajpalke, B Roul, M Kumar, SB Krupanidhi Journal of Applied Physics 110 (9), 2011	30	2011
NO2 gas sensing performance enhancement based on reduced graphene oxide decorated V2O5 thin films VS Bhati, D Sheela, B Roul, R Raliya, P Biswas, M Kumar, MS Roy, ... Nanotechnology 30 (22), 224001, 2019	29	2019
Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE M Kumar, MK Rajpalke, TN Bhat, B Roul, N Sinha, AT Kalghatgi, ... Materials Letters 65 (9), 1396-1399, 2011	27	2011
Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes B Roul, MK Rajpalke, TN Bhat, M Kumar, N Sinha, AT Kalghatgi, ... Journal of Applied Physics 109 (4), 044502-044502-5, 2011	27	2011

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