| Ultra-high photoresponse with superiorly sensitive metal-insulator-semiconductor (MIS) structured diodes for UV photodetector application R Marnadu, J Chandrasekaran, S Maruthamuthu, V Balasubramani, ... Applied Surface Science 480, 308-322, 2019 | 93 | 2019 |
| Colossal photosensitive boost in Schottky diode behaviour with Ce-V2O5 interfaced layer of MIS structure V Balasubramani, J Chandrasekaran, T Dai Nguyen, S Maruthamuthu, ... Sensors and Actuators A: Physical 315, 112333, 2020 | 54 | 2020 |
| Impact of Annealing Temperature on Spin Coated V2O5 Thin Films as Interfacial Layer in Cu/V2O5/n-Si Structured Schottky Barrier Diodes V Balasubramani, J Chandrasekaran, R Marnadu, P Vivek, ... Journal of Inorganic and Organometallic Polymers and Materials 29, 1533-1547, 2019 | 53 | 2019 |
| Impact of Zr content on multiphase zirconium–tungsten oxide (Zr–WOx) films and its MIS structure of Cu/Zr–WOx/p-Si Schottky barrier diodes R Marnadu, J Chandrasekaran, M Raja, M Balaji, V Balasubramani Journal of Materials Science: Materials in Electronics 29, 2618-2627, 2018 | 51 | 2018 |
| Incorporation of Ba2+ ions on the properties of MoO3 thin films and fabrication of positive photo-response Cu/Ba–MoO3/p-Si structured diodes P Vivek, J Chandrasekaran, R Marnadu, S Maruthamuthu, ... Superlattices and Microstructures 133, 106197, 2019 | 48 | 2019 |
| Jet Nebulizer Sprayed WO 3-Nanoplate Arrays for High-Photoresponsivity Based Metal–Insulator–Semiconductor Structured Schottky Barrier Diodes R Marnadu, J Chandrasekaran, S Maruthamuthu, P Vivek, ... Journal of Inorganic and Organometallic Polymers and Materials, 1-18, 2019 | 41 | 2019 |
| Upgraded photosensitivity under the influence of Yb doped on V2O5 thin films as an interfacial layer in MIS type Schottky barrier diode as photodiode application V Balasubramani, J Chandrasekaran, V Manikandan, TK Le, R Marnadu, ... Journal of Solid State Chemistry 301, 122289, 2021 | 38 | 2021 |
| Impact of Phase Transformation in WO3 Thin Films at Higher Temperature and its Compelling Interfacial Role in Cu/WO3/p–Si Structured Schottky Barrier Diodes R Marnadu, J Chandrasekaran, P Vivek, V Balasubramani, ... Zeitschrift für Physikalische Chemie, 2019 | 37 | 2019 |
| Zirconia modified nanostructured MoO3 thin films deposited by spray pyrolysis technique for Cu/MoO3-ZrO2/p-Si structured Schottky barrier diode application P Vivek, J Chandrasekaran, R Marnadu, S Maruthamuthu, ... Optik 199, 163351, 2019 | 35 | 2019 |
| Influence of rare earth doping concentrations on the properties of spin coated V2O5 thin films and Cu/Nd-V2O5/n-Si Schottky barrier diodes V Balasubramani, J Chandrasekaran, V Manikandan, R Marnadu, P Vivek, ... Inorganic Chemistry Communications 119, 108072, 2020 | 30 | 2020 |
| Improved photodetector performance of High-k dielectric material (La) doped V2O5 thin films as an interfacial layer in Schottky barrier diodes V Balasubramani, J Chandrasekaran, V Manikandan, TK Le, R Marnadu, ... Surfaces and Interfaces 25, 101297, 2021 | 26 | 2021 |
| Dielectric relaxation, electrical conductivity measurements, electric modulus and impedance analysis of WO3 nanostructures B Gowtham, V Balasubramani, S Ramanathan, M Ubaidullah, SF Shaikh, ... Journal of Alloys and Compounds 888, 161490, 2021 | 25 | 2021 |
| Fabrication of Cu/Y-MoO3/p-Si type Schottky barrier diodes by facile spray pyrolysis technique for photodetection application P Vivek, J Chandrasekaran, V Balasubramani Sensors and Actuators A: Physical 335, 113361, 2022 | 15 | 2022 |
| Enhanced photosensitive of Schottky diodes using SrO interfaced layer in MIS structure for optoelectronic applications V Balasubramani, PV Pham, A Ibrahim, J Hakami, MZ Ansari, TK Le Optical Materials 129, 112449, 2022 | 14 | 2022 |
| Enhancing the performance of TiO2 based N-DSSC using dye extracted from Cladophora Columbiana, Ludwigia repens and mixed sensitizer SB Vinaayak, V Balasubramani, M Shkir, MA Manthrammel, G Sreedevi Optical Materials 133, 112968, 2022 | 11 | 2022 |
| Effect of surface modification of WO3 nanostructures on the performance for p-Si/n-WO3 structure diodes B Gowtham, V Ponnuswamy, J Chandrasekaran, V Balasubramani, ... Inorganic Chemistry Communications 130, 108695, 2021 | 11 | 2021 |
| Incorporation of Zn ions on high dielectric HfO2 thin films by spray pyrolysis and fabrication of Al/Zn@ HfO2/n-Si Schottky barrier diodes P Harishsenthil, J Chandrasekaran, R Marnadu, V Balasubramani Sensors and Actuators A: Physical 331, 112725, 2021 | 11 | 2021 |
| Insertion of Ga-MoO3 thin film at Cu/p-Si interface for the fabrication of MIS structure Schottky barrier diodes P Vivek, J Chandrasekaran, V Balasubramani, A Manimekalai Surfaces and Interfaces 37, 102689, 2023 | 9 | 2023 |
| Fabrication of strontium included hafnium oxide thin film based Al/Sr: HfO2/n-Si MIS-Schottky barrier diodes for tuned electrical behavior H Perumal, J Chandrasekaran, D Thangaraju, V Balasubramani New Journal of Chemistry, 2021 | 9 | 2021 |
| Impact of phase transformation on MoS2 thin films on high temperature and its concomitant role in In-MoS2/P-Si structured PN junction diodes T Sasikala, K Shanmugasundaram, P Thirunavukkarasu, P Vivek, ... Optical Materials 131, 112584, 2022 | 8 | 2022 |
J ChandrasekaranSri Ramakrishna Mission Vidyalaya College of Arts and ScienceVerified email at rmv.ac.in
