Richard Hill
Richard Hill
Manager - Micron
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Enhancement-mode GaAs MOSFETs with an In0. 3 Ga0. 7As channel, a mobility of over 5000 cm2/VĚ s, and transconductance of over 475 μS/μm
RJW Hill, DAJ Moran, X Li, H Zhou, D Macintyre, S Thoms, A Asenov, ...
IEEE Electron Device Letters 28 (12), 1080-1082, 2007
High mobility III-V MOSFETs for RF and digital applications
M Passlack, P Zurcher, K Rajagopalan, R Droopad, J Abrokwah, M Tutt, ...
2007 IEEE International Electron Devices Meeting, 621-624, 2007
GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction
T Orzali, A Vert, B O'Brien, JL Herman, S Vivekanand, RJW Hill, Z Karim, ...
Journal of Applied Physics 118 (10), 2015
Threshold voltage shift due to charge trapping in dielectric-gated AlGaN/GaN high electron mobility transistors examined in Au-free technology
DW Johnson, RTP Lee, RJW Hill, MH Wong, G Bersuker, EL Piner, ...
IEEE transactions on electron devices 60 (10), 3197-3203, 2013
Positive bias instability and recovery in InGaAs channel nMOSFETs
S Deora, G Bersuker, WY Loh, D Veksler, K Matthews, TW Kim, RTP Lee, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 507-514, 2013
Self-aligned III-V MOSFETs heterointegrated on a 200 mm Si substrate using an industry standard process flow
RJW Hill, C Park, J Barnett, J Price, J Huang, N Goel, WY Loh, J Oh, ...
2010 International Electron Devices Meeting, 6.2. 1-6.2. 4, 2010
Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications
TW Kim, DH Kim, DH Koh, HM Kwon, RH Baek, D Veksler, C Huffman, ...
2013 IEEE International Electron Devices Meeting, 16.3. 1-16.3. 4, 2013
ETB-QW InAs MOSFET with scaled body for improved electrostatics
TW Kim, DH Kim, DH Koh, RJW Hill, RTP Lee, MH Wong, T Cunningham, ...
2012 International Electron Devices Meeting, 32.3. 1-32.3. 4, 2012
1 Ám gate length, In0. 75Ga0. 25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 ÁS/μm
RJW Hill, R Droopad, DAJ Moran, X Li, H Zhou, D Macintyre, S Thoms, ...
Electronics Letters 44 (7), 498-500, 2008
InAs quantum-well MOSFET (Lg = 100 nm) with record high gm, fT and fmax
TW Kim, RJW Hill, CD Young, D Veksler, L Morassi, S Oktybrshky, J Oh, ...
2012 Symposium on VLSI Technology (VLSIT), 179-180, 2012
Review of current status of III-V MOSFETs
I Thayne, R Hill, M Holland, X Li, H Zhou, D Macintyre, S Thoms, K Kalna, ...
ECS transactions 19 (5), 275, 2009
A study of capping layers for sulfur monolayer doping on III-V junctions
JH Yum, HS Shin, R Hill, J Oh, HD Lee, RM Mushinski, TW Hudnall, ...
Applied Physics Letters 101 (25), 2012
Memory arrays, and methods of forming memory arrays
D Daycock, RJ Hill, C Larsen, W Kim, JB Dorhout, BD Lowe, JD Hopkins, ...
US Patent 10,083,981, 2018
Defect reduction in epitaxial InP on nanostructured Si (001) substrates with position-controlled seed arrays
Q Li, KW Ng, CW Tang, KM Lau, R Hill, A Vert
Journal of crystal growth 405, 81-86, 2014
High-Speed E-Mode InAs QW MOSFETs With Insulator for Future RF Applications
DH Kim, TW Kim, RJW Hill, CD Young, CY Kang, C Hobbs, P Kirsch, ...
IEEE electron device letters 34 (2), 196-198, 2013
Gallium oxide (Ga2 O3) on gallium arsenide—A low defect, high-K system for future devices
GW Paterson, JA Wilson, D Moran, R Hill, AR Long, I Thayne, M Passlack, ...
Materials Science and Engineering: B 135 (3), 277-281, 2006
Monte Carlo Simulations of High-Performance Implant Free InGaAs Nano-MOSFETs for Low-Power CMOS Applications
K Kalna, JA Wilson, DAJ Moran, RJW Hill, AR Long, R Droopad, ...
IEEE transactions on nanotechnology 6 (1), 106-112, 2007
Study of piezoresistance under unixial stress for technologically relevant III-V semiconductors using wafer bending experiments
A Nainani, J Yum, J Barnett, R Hill, N Goel, J Huang, P Majhi, R Jammy, ...
Applied Physics Letters 96 (24), 2010
A low damage Si3N4 sidewall spacer process for self-aligned sub-100 nm III–V MOSFETs
X Li, RJW Hill, H Zhou, CDW Wilkinson, IG Thayne
Microelectronic Engineering 85 (5-6), 996-999, 2008
Heavily tellurium doped n-type InGaAs grown by MOCVD on 300 mm Si wafers
T Orzali, A Vert, RTP Lee, A Norvilas, G Huang, JL Herman, RJW Hill, ...
Journal of crystal Growth 426, 243-247, 2015
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