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D S Rawal
D S Rawal
GOI
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Year
Evidence of Fowler–Nordheim tunneling in gate leakage current of AlGaN/GaN HEMTs at room temperature
S Turuvekere, DS Rawal, A DasGupta, N DasGupta
IEEE Transactions on Electron Devices 61 (12), 4291-4294, 2014
512014
-Based Inductively Coupled Plasma Etching of GaN/AlGaN Using Photoresist Mask
DS Rawal, HK Malik, VR Agarwal, AK Kapoor, BK Sehgal, ...
IEEE Transactions on plasma science 40 (9), 2211-2220, 2012
442012
Experimental study of the influence of process pressure and gas composition on GaAs etching characteristics in Cl2/BCl3-based inductively coupled plasma
DS Rawal, BK Sehgal, R Muralidharan, HK Malik
Plasma Science and Technology 13 (2), 223, 2011
392011
Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT
A Malik, C Sharma, R Laishram, RK Bag, DS Rawal, S Vinayak, ...
Solid-State Electronics 142, 8-13, 2018
352018
Effect of BCl3 concentration and process pressure on the GaN mesa sidewalls in BCl3/Cl2 based inductively coupled plasma etching
DS Rawal, BK Sehgal, R Muralidharan, HK Malik, A Dasgupta
Vacuum 86 (12), 1844-1849, 2012
332012
RF parameter extraction of MMIC nichrome resistors
R Sharma, S Vinayak, DS Rawal, A Kumar, UC Ray
Microwave and Optical Technology Letters 39 (5), 409-412, 2003
282003
Comparative study of GaN mesa etch characteristics in Cl2 based inductively coupled plasma with Ar and BCl3 as additive gases
DS Rawal, H Arora, BK Sehgal, R Muralidharan
Journal of Vacuum Science & Technology A 32 (3), 2014
252014
Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors
Ajay Kumar Visvkarma, Chandan Sharma, Robert Laishram, Sonalee Kapoor, D S ...
AIP Advances 9 (12), 125231, 2019
242019
Effect of γ-ray irradiation on Schottky and ohmic contacts on AlGaN/GaN hetero-structures
C Sharma, AK Visvkarma, R Laishram, A Kumar, DS Rawal, S Vinayak, ...
Microelectronics Reliability 105, 113565, 2020
232020
Etching of mesa structures in HgCdTe
V Srivastav, R Pal, BL Sharma, A Naik, DS Rawal, V Gopal, HP Vyas
Journal of electronic materials 34, 1440-1445, 2005
232005
Improved properties of Sm substituted PCT ceramics using microwave sintering
S Singh, OP Thakur, DS Rawal, C Prakash, KK Raina
Materials Letters 59 (7), 768-772, 2005
222005
Impact of heavy ion particle strike induced single event transients on conventional and π-Gate AlGaN/GaN HEMTs
K Sehra, V Kumari, M Gupta, M Mishra, DS Rawal, M Saxena
Semiconductor Science and Technology 36 (3), 035009, 2021
212021
Design and fabrication of multi-finger field plate for enhancement of AlGaN/GaN HEMT breakdown voltage
M Amit, DS Rawal, S Sharma, S Kapoor, R Liashram, RK Chaubey, ...
Defence science journal 68 (3), 290, 2018
202018
GaN etch rate and surface roughness evolution in Cl2/Ar based inductively coupled plasma etching
DS Rawal, H Arora, VR Agarwal, S Vinayak, A Kapoor, BK Sehgal, ...
Thin Solid Films 520 (24), 7212-7218, 2012
182012
Elimination of current non-uniformity in carbon nanotube field emitters
P Verma, P Chaturvedi, JSBS Rawat, M Kumar, S Pal, M Bal, DS Rawal, ...
Journal of Materials Science: Materials in Electronics 18, 677-680, 2007
162007
Improvement in DC and pulse characteristics of AlGaN/GaN HEMT by employing dual metal gate structure
AK Visvkarma, R Laishram, S Kapoor, DS Rawal, S Vinayak, M Saxena
Semiconductor Science and Technology 34 (10), 105013, 2019
152019
Anisotropic Etching of GaAs Using CCl2 F 2/CCl4 Gases to Fabricate 200 μm Deep Via Holes for Grounding MMICs
DS Rawal, VR Agarwal, HS Sharma, BK Sehgal, R Gulati, HP Vyas
Journal of the Electrochemical Society 150 (7), G395, 2003
142003
Impact of Gamma Radiations on Static, Pulsed I–V, and RF Performance Parameters of AlGaN/GaN HEMT
AK Visvkarma, K Sehra, R Laishram, A Malik, S Sharma, S Kumar, ...
IEEE Transactions on Electron Devices 69 (5), 2299-2306, 2022
122022
Optimization of π–gate AlGaN/AlN/GaN HEMTs for low noise and high gain applications
K Sehra, V Kumari, M Gupta, M Mishra, DS Rawal, M Saxena
Silicon, 1-12, 2020
122020
Proton irradiation effects on buffer-free gallium nitride on silicon carbide high electron mobility transistor-based radio frequency power amplifier
S Raut, K Sehra, M Mishra, DS Rawal, M Gupta, M Saxena
Semiconductor Science and Technology 36 (4), 045019, 2021
112021
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