D S Rawal
D S Rawal
Verified email at
Cited by
Cited by
Evidence of Fowler–Nordheim tunneling in gate leakage current of AlGaN/GaN HEMTs at room temperature
S Turuvekere, DS Rawal, A DasGupta, N DasGupta
IEEE Transactions on Electron Devices 61 (12), 4291-4294, 2014
-Based Inductively Coupled Plasma Etching of GaN/AlGaN Using Photoresist Mask
DS Rawal, HK Malik, VR Agarwal, AK Kapoor, BK Sehgal, ...
IEEE Transactions on plasma science 40 (9), 2211-2220, 2012
Experimental study of the influence of process pressure and gas composition on GaAs etching characteristics in Cl2/BCl3-based inductively coupled plasma
DS Rawal, BK Sehgal, R Muralidharan, HK Malik
Plasma Science and Technology 13 (2), 223, 2011
Effect of BCl3 concentration and process pressure on the GaN mesa sidewalls in BCl3/Cl2 based inductively coupled plasma etching
DS Rawal, BK Sehgal, R Muralidharan, HK Malik, A Dasgupta
Vacuum 86 (12), 1844-1849, 2012
Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT
A Malik, C Sharma, R Laishram, RK Bag, DS Rawal, S Vinayak, ...
Solid-State Electronics 142, 8-13, 2018
RF parameter extraction of MMIC nichrome resistors
R Sharma, S Vinayak, DS Rawal, A Kumar, UC Ray
Microwave and optical technology letters 39 (5), 409-412, 2003
Comparative study of GaN mesa etch characteristics in Cl2 based inductively coupled plasma with Ar and BCl3 as additive gases
DS Rawal, H Arora, BK Sehgal, R Muralidharan
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 32 (3 …, 2014
Etching of mesa structures in HgCdTe
V Srivastav, R Pal, BL Sharma, A Naik, DS Rawal, V Gopal, HP Vyas
Journal of electronic materials 34 (11), 1440-1445, 2005
Effect of γ-ray irradiation on Schottky and ohmic contacts on AlGaN/GaN hetero-structures
C Sharma, AK Visvkarma, R Laishram, A Kumar, DS Rawal, S Vinayak, ...
Microelectronics Reliability 105, 113565, 2020
Improved properties of Sm substituted PCT ceramics using microwave sintering
S Singh, OP Thakur, DS Rawal, C Prakash, KK Raina
Materials Letters 59 (7), 768-772, 2005
GaN etch rate and surface roughness evolution in Cl2/Ar based inductively coupled plasma etching
DS Rawal, H Arora, VR Agarwal, S Vinayak, A Kapoor, BK Sehgal, ...
Thin Solid Films 520 (24), 7212-7218, 2012
Elimination of current non-uniformity in carbon nanotube field emitters
P Verma, P Chaturvedi, J Rawat, M Kumar, S Pal, M Bal, DS Rawal, ...
Journal of Materials Science: Materials in Electronics 18 (6), 677-680, 2007
Improvement in DC and pulse characteristics of AlGaN/GaN HEMT by employing dual metal gate structure
AK Visvkarma, R Laishram, S Kapoor, DS Rawal, S Vinayak, M Saxena
Semiconductor Science and Technology 34 (10), 105013, 2019
Anisotropic Etching of GaAs Using CCl2 F 2/CCl4 Gases to Fabricate 200 μm Deep Via Holes for Grounding MMICs
DS Rawal, VR Agarwal, HS Sharma, BK Sehgal, R Gulati, HP Vyas
Journal of the Electrochemical Society 150 (7), G395, 2003
Impact of heavy ion particle strike induced single event transients on conventional and π-Gate AlGaN/GaN HEMTs
K Sehra, V Kumari, M Gupta, M Mishra, DS Rawal, M Saxena
Semiconductor Science and Technology 36 (3), 035009, 2021
Design and fabrication of multi-finger field plate for enhancement of AlGaN/GaN HEMT breakdown voltage
M Amit, DS Rawal, S Sharma, S Kapoor, R Liashram, RK Chaubey, ...
Defence Science Journal 68 (3), 290, 2018
Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors
Ajay Kumar Visvkarma, Chandan Sharma, Robert Laishram, Sonalee Kapoor, D S ...
AIP Advances 9 (12), 125231, 2019
Back-side via hole etching process for grounding GaAs based monolithic microwave integrated circuits
VR Agarwal, DS Rawal, HP Vyas
Journal of the Electrochemical Society 152 (7), G567, 2005
Optimization of π–gate AlGaN/AlN/GaN HEMTs for low noise and high gain applications
K Sehra, V Kumari, M Gupta, M Mishra, DS Rawal, M Saxena
Silicon, 1-12, 2020
Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices
C Sharma, R Laishram, Amit, DS Rawal, S Vinayak, R Singh
AIP Advances 7 (8), 085209, 2017
The system can't perform the operation now. Try again later.
Articles 1–20