Evidence of Fowler–Nordheim tunneling in gate leakage current of AlGaN/GaN HEMTs at room temperature S Turuvekere, DS Rawal, A DasGupta, N DasGupta IEEE Transactions on Electron Devices 61 (12), 4291-4294, 2014 | 51 | 2014 |
-Based Inductively Coupled Plasma Etching of GaN/AlGaN Using Photoresist Mask DS Rawal, HK Malik, VR Agarwal, AK Kapoor, BK Sehgal, ... IEEE Transactions on plasma science 40 (9), 2211-2220, 2012 | 44 | 2012 |
Experimental study of the influence of process pressure and gas composition on GaAs etching characteristics in Cl2/BCl3-based inductively coupled plasma DS Rawal, BK Sehgal, R Muralidharan, HK Malik Plasma Science and Technology 13 (2), 223, 2011 | 39 | 2011 |
Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT A Malik, C Sharma, R Laishram, RK Bag, DS Rawal, S Vinayak, ... Solid-State Electronics 142, 8-13, 2018 | 35 | 2018 |
Effect of BCl3 concentration and process pressure on the GaN mesa sidewalls in BCl3/Cl2 based inductively coupled plasma etching DS Rawal, BK Sehgal, R Muralidharan, HK Malik, A Dasgupta Vacuum 86 (12), 1844-1849, 2012 | 33 | 2012 |
RF parameter extraction of MMIC nichrome resistors R Sharma, S Vinayak, DS Rawal, A Kumar, UC Ray Microwave and Optical Technology Letters 39 (5), 409-412, 2003 | 28 | 2003 |
Comparative study of GaN mesa etch characteristics in Cl2 based inductively coupled plasma with Ar and BCl3 as additive gases DS Rawal, H Arora, BK Sehgal, R Muralidharan Journal of Vacuum Science & Technology A 32 (3), 2014 | 25 | 2014 |
Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors Ajay Kumar Visvkarma, Chandan Sharma, Robert Laishram, Sonalee Kapoor, D S ... AIP Advances 9 (12), 125231, 2019 | 24 | 2019 |
Effect of γ-ray irradiation on Schottky and ohmic contacts on AlGaN/GaN hetero-structures C Sharma, AK Visvkarma, R Laishram, A Kumar, DS Rawal, S Vinayak, ... Microelectronics Reliability 105, 113565, 2020 | 23 | 2020 |
Etching of mesa structures in HgCdTe V Srivastav, R Pal, BL Sharma, A Naik, DS Rawal, V Gopal, HP Vyas Journal of electronic materials 34, 1440-1445, 2005 | 23 | 2005 |
Improved properties of Sm substituted PCT ceramics using microwave sintering S Singh, OP Thakur, DS Rawal, C Prakash, KK Raina Materials Letters 59 (7), 768-772, 2005 | 22 | 2005 |
Impact of heavy ion particle strike induced single event transients on conventional and π-Gate AlGaN/GaN HEMTs K Sehra, V Kumari, M Gupta, M Mishra, DS Rawal, M Saxena Semiconductor Science and Technology 36 (3), 035009, 2021 | 21 | 2021 |
Design and fabrication of multi-finger field plate for enhancement of AlGaN/GaN HEMT breakdown voltage M Amit, DS Rawal, S Sharma, S Kapoor, R Liashram, RK Chaubey, ... Defence science journal 68 (3), 290, 2018 | 20 | 2018 |
GaN etch rate and surface roughness evolution in Cl2/Ar based inductively coupled plasma etching DS Rawal, H Arora, VR Agarwal, S Vinayak, A Kapoor, BK Sehgal, ... Thin Solid Films 520 (24), 7212-7218, 2012 | 18 | 2012 |
Elimination of current non-uniformity in carbon nanotube field emitters P Verma, P Chaturvedi, JSBS Rawat, M Kumar, S Pal, M Bal, DS Rawal, ... Journal of Materials Science: Materials in Electronics 18, 677-680, 2007 | 16 | 2007 |
Improvement in DC and pulse characteristics of AlGaN/GaN HEMT by employing dual metal gate structure AK Visvkarma, R Laishram, S Kapoor, DS Rawal, S Vinayak, M Saxena Semiconductor Science and Technology 34 (10), 105013, 2019 | 15 | 2019 |
Anisotropic Etching of GaAs Using CCl2 F 2/CCl4 Gases to Fabricate 200 μm Deep Via Holes for Grounding MMICs DS Rawal, VR Agarwal, HS Sharma, BK Sehgal, R Gulati, HP Vyas Journal of the Electrochemical Society 150 (7), G395, 2003 | 14 | 2003 |
Impact of Gamma Radiations on Static, Pulsed I–V, and RF Performance Parameters of AlGaN/GaN HEMT AK Visvkarma, K Sehra, R Laishram, A Malik, S Sharma, S Kumar, ... IEEE Transactions on Electron Devices 69 (5), 2299-2306, 2022 | 12 | 2022 |
Optimization of π–gate AlGaN/AlN/GaN HEMTs for low noise and high gain applications K Sehra, V Kumari, M Gupta, M Mishra, DS Rawal, M Saxena Silicon, 1-12, 2020 | 12 | 2020 |
Proton irradiation effects on buffer-free gallium nitride on silicon carbide high electron mobility transistor-based radio frequency power amplifier S Raut, K Sehra, M Mishra, DS Rawal, M Gupta, M Saxena Semiconductor Science and Technology 36 (4), 045019, 2021 | 11 | 2021 |