Sanatan Chattopadhyay
Sanatan Chattopadhyay
Department of Electronic Science
Verified email at caluniv.ac.in
Title
Cited by
Cited by
Year
Strained-Si heterostructure field effect transistors
CK Maiti, LK Bera, S Chattopadhyay
Semiconductor science and technology 13 (11), 1225, 1999
1421999
A model for capacitance reconstruction from measured lossy MOS capacitance–voltage characteristics
KSK Kwa, S Chattopadhyay, ND Jankovic, SH Olsen, LS Driscoll, ...
Semiconductor science and technology 18 (2), 82, 2002
1132002
High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture
SH Olsen, AG O'Neill, LS Driscoll, KSK Kwa, S Chattopadhyay, AM Waite, ...
IEEE Transactions on Electron Devices 50 (9), 1961-1969, 2003
952003
Strained-Si heterostructure field effect devices
CK Maiti, S Chattopadhyay, LK Bera
Taylor & Francis, 2007
942007
Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs
GK Dalapati, S Chattopadhyay, KSK Kwa, SH Olsen, YL Tsang, R Agaiby, ...
IEEE Transactions on Electron Devices 53 (5), 1142-1152, 2006
852006
Interfacial reactions of Ni on Si 1-x Ge x (x= 0.2, 0.3) at low temperature by rapid thermal annealing
HB Zhao, KL Pey, WK Choi, S Chattopadhyay, EA Fitzgerald, ...
Journal of applied physics 92 (1), 214-217, 2002
692002
Thermal reaction of nickel and alloy
KL Pey, WK Choi, S Chattopadhyay, HB Zhao, EA Fitzgerald, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 20 (6 …, 2002
662002
Leakage current and charge trapping behavior in Ti O 2∕ Si O 2 high-κ gate dielectric stack on 4 H‐Si C substrate
R Mahapatra, AK Chakraborty, N Poolamai, A Horsfall, S Chattopadhyay, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
632007
Study of single-and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs
SH Olsen, AG O'Neill, S Chattopadhyay, LS Driscoll, KSK Kwa, DJ Norris, ...
IEEE Transactions on Electron Devices 51 (8), 1245-1253, 2004
532004
A semianalytical description of the hole band structure in inversion layers for the physically based modeling of pMOS transistors
M De Michielis, D Esseni, YL Tsang, P Palestri, L Selmi, AG O'Neill, ...
IEEE transactions on electron devices 54 (9), 2164-2173, 2007
452007
Physical and electrochemical characterization of reduced graphene oxide/silver nanocomposites synthesized by adopting a green approach
I Roy, D Rana, G Sarkar, A Bhattacharyya, NR Saha, S Mondal, ...
RSC Advances 5 (32), 25357-25364, 2015
392015
Design, fabrication and characterisation of strained Si/SiGe MOS transistors
SH Olsen, KSK Kwa, LS Driscoll, S Chattopadhyay, AG O'Neill
IEE Proceedings-Circuits, Devices and Systems 151 (5), 431-437, 2004
382004
Design, fabrication and characterisation of strained Si/SiGe MOS transistors
SH Olsen, KSK Kwa, LS Driscoll, S Chattopadhyay, AG O'Neill
IEE Proceedings-Circuits, Devices and Systems 151 (5), 431-437, 2004
382004
Comparative performance analysis of the dielectrically modulated full-gate and short-gate tunnel FET-based biosensors
S Kanungo, S Chattopadhyay, PS Gupta, H Rahaman
IEEE Transactions on Electron Devices 62 (3), 994-1001, 2015
362015
Strained Si MOSFETs on relaxed SiGe platforms: performance and challenges
S Chattopadhyay, LD Driscoll, KSK Kwa, SH Olsen, AG O'Neill
Solid-State Electronics 48 (8), 1407-1416, 2004
342004
Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors
SH Olsen, AG O’neill, P Dobrosz, SJ Bull, LS Driscoll, S Chattopadhyay, ...
Journal of applied physics 97 (11), 114504, 2005
332005
Effects of interface engineering for gate dielectric stack on
R Mahapatra, AK Chakraborty, AB Horsfall, S Chattopadhyay, NG Wright, ...
Journal of Applied Physics 102 (2), 024105, 2007
322007
Stability and composition of Ni–germanosilicided films
KL Pey, S Chattopadhyay, WK Choi, Y Miron, EA Fitzgerald, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
322004
C–V characterization of strained Si/SiGe multiple heterojunction capacitors as a tool for heterojunction MOSFET channel design
S Chattopadhyay, KSK Kwa, SH Olsen, LS Driscoll, AG O'Neill
Semiconductor science and technology 18 (8), 738, 2003
322003
Chemical bath deposited (CBD) CuO thin films on n-silicon substrate for electronic and optical applications: Impact of growth time
J Sultana, S Paul, A Karmakar, R Yi, GK Dalapati, S Chattopadhyay
Applied surface science 418, 380-387, 2017
312017
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