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Sanatan Chattopadhyay
Sanatan Chattopadhyay
Verified email at caluniv.ac.in
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Cited by
Cited by
Year
Comparative performance analysis of the dielectrically modulated full-gate and short-gate tunnel FET-based biosensors
S Kanungo, S Chattopadhyay, PS Gupta, H Rahaman
IEEE Transactions on Electron Devices 62 (3), 994-1001, 2015
1862015
Study and analysis of the effects of SiGe source and pocket-doped channel on sensing performance of dielectrically modulated tunnel FET-based biosensors
S Kanungo, S Chattopadhyay, PS Gupta, K Sinha, H Rahaman
IEEE Transactions on Electron Devices 63 (6), 2589-2596, 2016
1672016
Strained-Si heterostructure field effect transistors
CK Maiti, LK Bera, S Chattopadhyay
Semiconductor science and technology 13 (11), 1225, 1999
1521999
A model for capacitance reconstruction from measured lossy MOS capacitance–voltage characteristics
KSK Kwa, S Chattopadhyay, ND Jankovic, SH Olsen, LS Driscoll, ...
Semiconductor science and technology 18 (2), 82, 2002
1252002
Strained-Si heterostructure field effect devices
CK Maiti, S Chattopadhyay, LK Bera
Taylor & Francis, 2007
1022007
Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs
GK Dalapati, S Chattopadhyay, KSK Kwa, SH Olsen, YL Tsang, R Agaiby, ...
IEEE Transactions on Electron Devices 53 (5), 1142-1152, 2006
952006
High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture
SH Olsen, AG O'Neill, LS Driscoll, KSK Kwa, S Chattopadhyay, AM Waite, ...
IEEE Transactions on Electron Devices 50 (9), 1961-1969, 2003
922003
Chemical bath deposited (CBD) CuO thin films on n-silicon substrate for electronic and optical applications: Impact of growth time
J Sultana, S Paul, A Karmakar, R Yi, GK Dalapati, S Chattopadhyay
Applied surface science 418, 380-387, 2017
862017
Physical and electrochemical characterization of reduced graphene oxide/silver nanocomposites synthesized by adopting a green approach
I Roy, D Rana, G Sarkar, A Bhattacharyya, NR Saha, S Mondal, ...
RSC Advances 5 (32), 25357-25364, 2015
822015
Synthesis and characterization of graphene from waste dry cell battery for electronic applications
I Roy, G Sarkar, S Mondal, D Rana, A Bhattacharyya, NR Saha, ...
RSC advances 6 (13), 10557-10564, 2016
812016
Thermal reaction of nickel and alloy
KL Pey, WK Choi, S Chattopadhyay, HB Zhao, EA Fitzgerald, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 20 (6 …, 2002
792002
Interfacial reactions of Ni on Si 1-x Ge x (x= 0.2, 0.3) at low temperature by rapid thermal annealing
HB Zhao, KL Pey, WK Choi, S Chattopadhyay, EA Fitzgerald, ...
Journal of applied physics 92 (1), 214-217, 2002
792002
Green synthesis of cadmium oxide decorated reduced graphene oxide nanocomposites and its electrical and antibacterial properties
S Sadhukhan, TK Ghosh, I Roy, D Rana, A Bhattacharyya, R Saha, ...
Materials Science and Engineering: C 99, 696-709, 2019
762019
Leakage current and charge trapping behavior in TiO2∕ SiO2 high-κ gate dielectric stack on 4H‐SiC substrate
R Mahapatra, AK Chakraborty, N Poolamai, A Horsfall, S Chattopadhyay, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
732007
FT-MIR supported Electrical Impedance Spectroscopy based study of sugar adulterated honeys from different floral origin
C Das, S Chakraborty, K Acharya, NK Bera, D Chattopadhyay, ...
Talanta 171, 327-334, 2017
662017
Study of single-and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs
SH Olsen, AG O'Neill, S Chattopadhyay, LS Driscoll, KSK Kwa, DJ Norris, ...
IEEE Transactions on Electron Devices 51 (8), 1245-1253, 2004
512004
Clustered vacancies in ZnO: chemical aspects and consequences on physical properties
S Pal, N Gogurla, A Das, SS Singha, P Kumar, D Kanjilal, A Singha, ...
Journal of Physics D: Applied Physics 51 (10), 105107, 2018
502018
Green synthesis of silver nanoparticles-based nanofluids and investigation of their antimicrobial activities
MMR Mollick, B Bhowmick, D Maity, D Mondal, I Roy, J Sarkar, D Rana, ...
Microfluidics and nanofluidics 16, 541-551, 2014
502014
A semianalytical description of the hole band structure in inversion layers for the physically based modeling of pMOS transistors
M De Michielis, D Esseni, YL Tsang, P Palestri, L Selmi, AG O'Neill, ...
IEEE transactions on electron devices 54 (9), 2164-2173, 2007
482007
2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects
S Kanungo, G Ahmad, P Sahatiya, A Mukhopadhyay, S Chattopadhyay
npj 2D Materials and Applications 6 (1), 83, 2022
412022
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