| Study on inter band and inter sub-band optical transitions with varying InAs/InGaAs sub-monolayer quantum dot heterostructure stacks grown by molecular beam epitaxy SR Shriram, R Kumar, D Panda, J Saha, B Tongbram, MR Mantri, SA Gazi, ... IEEE Transactions on Nanotechnology 19, 601-608, 2020 | 10 | 2020 |
| Impact of digital alloy capping layers on bilayer InAs quantum dot heterostructures R Kumar, J Saha, S Chakrabarti IEEE Transactions on Nanotechnology 19, 368-374, 2020 | 10 | 2020 |
| Ameliorating the optical and structural properties of InAs quantum dot heterostructures through digital alloy capping materials: Theory and experiment R Kumar, J Saha, D Panda, R Kumar, SA Gazi, R Gourishetty, ... Optical Materials 108, 110419, 2020 | 9 | 2020 |
| The Role and Growth of Strain – Reducing Layer by Molecular - Beam Epitaxy in a Multi – Stack InAs/(In,Ga)As Sub - Monolayer Quantum Dot Heterostructure SR Shriram, D Panda, R Kumar, J Saha, B Tongbram, MR Mantri, SA Gazi, ... Optical Materials 114 (110817), 9, 2021 | 8 | 2021 |
| In-Situ Tailoring of Vertically Coupled InAs pip Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In–Ga Intermixing S Dongre, S Paul, S Mondal, R Kumar, D Panda, SA Gazi, D Das, ... ACS Applied Electronic Materials 2 (5), 1243-1253, 2020 | 7 | 2020 |
| A comparative analysis of analog and digital alloy technique of InxGa1-xAs capping material on InAs quantum dot heterostructures R Kumar, J Saha, S Chakrabarti Nanophotonics VIII 11345, 310-316, 2020 | 7 | 2020 |
| Bilayer self-assembled InAs QD using digital alloy capping layer approach: experiment and theory R Kumar, J Saha, D Panda, R Kumar, SA Gazi, R Gourishetty, ... Low-Dimensional Materials and Devices 2020 11465, 85-94, 2020 | 6 | 2020 |
| Performance analysis of dynamic CMOS circuit based on node‐discharger and twist‐connected transistors D Vaithiyanathan, R Kumar, A Rai, K Sharma IET Computers & Digital Techniques 14 (3), 107-113, 2020 | 6 | 2020 |
| Novel approach for augmented carrier transfer and reduced Fermi level pinning effect in InAs surface quantum dots D Panda, MR Mantri, R Kumar, D Das, R Saha, S Chakrabarti Applied Surface Science 607, 154948, 2023 | 4 | 2023 |
| Variation of In-concentration in barrier material of SK on SML quantum dot heterostructures and its impact on the strain and emission wavelength R Kumar, J Saha, S Chakrabarti Physics and Simulation of Optoelectronic Devices XXIX 11680, 218-224, 2021 | 4 | 2021 |
| A comparative study of analog and digital alloy technique of InxGa1-xAs well material on InAs/InGaAs DWELL heterostructures R Kumar, J Saha, S Chakrabarti Low-Dimensional Materials and Devices 2020 11465, 95-103, 2020 | 4 | 2020 |
| Influence of InGaAs matrix thickness on the optical properties and strain distribution in self-assembled sub-monolayer InAs quantum dot heterostructures SR Shriram, R Kumar, SA Gazi, J Saha, D Panda, A Mandal, ... Nanophotonics VIII 11345, 287-293, 2020 | 3 | 2020 |
| Strain minimization of InAs QDs heterostructures using dual quaternary-ternary/ternary-quaternary capping materials via digital alloy capping layer approach R Kumar, J Saha, S Chakrabarti IEEE Transactions on Nanotechnology 21, 489-498, 2022 | 2 | 2022 |
| A comparative study of analog, digital, and linear alloy technique on the strain and optical properties of symmetrical InGaAs/InAs/InGaAs quantum dot-in-a-well (DWELL … A Kumar, R Kumar, S Prabhu, S Chakrabarti Photonic and Phononic Properties of Engineered Nanostructures XII 12010, 70-76, 2022 | 2 | 2022 |
| Improved structural and optical behaviour of InAs Stranski-Krastanov (SK) quantum dot heterostructures using analog, digital, and linear alloy techniques A Kumar, S Prabhu, R Kumar, S Chakrabarti Physics and Simulation of Optoelectronic Devices XXX 11995, 157-164, 2022 | 2 | 2022 |
| Effect of GaAs1-xNx capping layer on the strain profile and emission PL wavelength of InAs quantum dot heterostructures using digital alloy approach R Kumar, J Saha, S Chakrabarti Quantum Optics and Photon Counting 2021 11771, 136-142, 2021 | 2 | 2021 |
| Effect of variation in Sb composition in In0. 18Ga0. 82AsYSb1-Y capping layer on InAs Stranski-Krastanov (SK) QDs in strain coupled Stranski-Krastanov (SK) on submonolayer (SML … S Choudhary, R Kumar, S Chakrabarti Low-Dimensional Materials and Devices 2021 11800, 67-73, 2021 | 1 | 2021 |
| Study on optical properties and strain distribution of InAs/InGaAs sub-monolayer quantum dot heterostructure with multiple stacking layers SR Shriram, SA Gazi, R Kumar, J Saha, D Panda, A Mandal, ... Nanophotonics VIII 11345, 294-301, 2020 | 1 | 2020 |
| Investigation of strain propagation, optical, and structural properties of a novel heterostructure with multilayer Stranski-Krastanov (SK) strain-coupled quantum dots (QDs) R Saha, FSA Sabiha, R Gourishetty, R Kumar, A Nath, S Chakrabarti Physics and Simulation of Optoelectronic Devices XXXII 12880, 243-249, 2024 | | 2024 |
| Investigation of strain profile and band-alignment study in InAs/GaAsSb quantum dot heterostructure with varying Sb content FSA Sabiha, R Kumar, R Gourishetty, R Saha, MR Mantri, A Kumar, ... Infrared Sensors, Devices, and Applications XIII 12687, 147-154, 2023 | | 2023 |
