Tomoyuki Miyamoto
Title
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Year
Thermal annealing of GaInNAs/GaAs quantum wells grown by chemical beam epitaxy and its effect on photoluminescence
T Kageyama, T Miyamoto, S Makino, F Koyama, K Iga
Japanese journal of applied physics 38 (3B), L298, 1999
1191999
Lasing characteristics of low-threshold GaInNAs lasers grown by metalorganic chemical vapor deposition
M Kawaguchi, T Miyamoto, E Gouardes, D Schlenker, T Kondo, F Koyama, ...
Japanese Journal of Applied Physics 40 (7B), L744, 2001
1142001
Growth of highly strained GaInAs/GaAs quantum wells for 1.2 μm wavelength lasers
D Schlenker, T Miyamoto, Z Chen, F Koyama, K Iga
Journal of crystal growth 209 (1), 27-36, 2000
1042000
Strong enhancement of light extraction efficiency in GaInAsP 2-D-arranged microcolumns
T Baba, K Inoshita, H Tanaka, J Yonekura, M Ariga, A Matsutani, ...
Journal of lightwave technology 17 (11), 2113, 1999
961999
1.2 Ám highly strained GaInAs/GaAs quantum well lasers for singlemode fibre datalink
F Koyama, D Schlenker, T Miyamoto, Z Chen, A Matsutani, T Sakaguchi, ...
Electronics Letters 35 (13), 1079-1081, 1999
931999
A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers
T Miyamoto, K Takeuchi, F Koyama, K Iga
IEEE Photonics Technology Letters 9 (11), 1448-1450, 1997
851997
Highly strained GaInAs-GaAs quantum-well vertical-cavity surface-emitting laser on GaAs (311) B substrate for stable polarization operation
N Niskiyama, M Arai, S Shinada, M Azuchi, T Miyamoto, F Koyama, K Iga
IEEE Journal of Selected Topics in Quantum Electronics 7 (2), 242-248, 2001
782001
Continuous wave operation of 1.26/spl mu/m GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition
S Sato, N Nishiyama, T Miyamoto, T Takahashi, N Jikutani, M Arai, ...
Electronics Letters 36 (24), 2018-2019, 2000
752000
1.17-μm highly strained GaInAs-GaAs quantum-well laser
D Schlenker, T Miyamoto, Z Chen, F Koyama, K Iga
IEEE Photonics Technology Letters 11 (8), 946-948, 1999
721999
High-temperature operation up to 170/spl deg/C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy
T Kageyama, T Miyamoto, S Makino, N Nishiyama, F Koyama, K Iga
IEEE Photonics Technology Letters 12 (1), 10-12, 2000
682000
40 ┼ continuous tuning of a GaInAsP/InP vertical-cavity surface-emitting laser using an external mirror
N Yokouchi, T Miyamoto, T Uchida, Y Inaba, F Koyama, K Iga
IEEE photonics technology letters 4 (7), 701-703, 1992
661992
GaInNAs/GaAs quantum dots grown by chemical beam epitaxy
S Makino, T Miyamoto, T Kageyama, N Nishiyama, F Koyama, K Iga
Journal of crystal growth 221 (1-4), 561-565, 2000
642000
CBE and MOCVD growth of GaInNAs
T Miyamoto, T Kageyama, S Makino, D Schlenker, F Koyama, K Iga
Journal of crystal growth 209 (2-3), 339-344, 2000
602000
Low temperature growth of GaInNAs/GaAs quantum wells by metalorganic chemical vapor deposition using tertiarybutylarsine
Z Pan, T Miyamoto, D Schlenker, S Sato, F Koyama, K Iga
Journal of applied physics 84 (11), 6409-6411, 1998
601998
Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property
T Miyamoto, K Takeuchi, T Kageyama, F Koyama, K Iga
Journal of crystal growth 197 (1-2), 67-72, 1999
571999
Optical quality of GaNAs and GaInNAs and its dependence on RF cell condition in chemical beam epitaxy
T Kageyama, T Miyamoto, S Makino, F Koyama, K Iga
Journal of crystal growth 209 (2-3), 350-354, 2000
562000
Miscibility gap calculation for Ga1− xInxNyAs1− y including strain effects
D Schlenker, T Miyamoto, Z Pan, F Koyama, K Iga
Journal of crystal growth 196 (1), 67-70, 1999
561999
Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition
M Kawaguchi, E Gouardes, D Schlenker, T Kondo, T Miyamoto, F Koyama, ...
Electronics Letters 36 (21), 1776-1777, 2000
552000
Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy
T Kageyama, T Miyamoto, M Ohta, T Matsuura, Y Matsui, T Furuhata, ...
Journal of applied physics 96 (1), 44-48, 2004
482004
Quality improvement of GaInNAs/GaAs quantum well growth by metalorganic chemical vapor deposition using tertiarybutylarsine
Z Pan, T Miyamoto, F Koyama, K Iga
Japanese journal of applied physics 38 (2S), 1012, 1999
471999
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Articles 1–20