Optically controlled switching of the charge state of a single nitrogen-vacancy center in diamond at cryogenic temperatures P Siyushev, H Pinto, M Vörös, A Gali, F Jelezko, J Wrachtrup Physical review letters 110 (16), 167402, 2013 | 290 | 2013 |
p-type doping of graphene with F4-TCNQ H Pinto, R Jones, JP Goss, PR Briddon Journal of Physics: Condensed Matter 21 (40), 402001, 2009 | 160 | 2009 |
Electronic and electrochemical doping of graphene by surface adsorbates HPA Markevich Beilstein J. Nanotechnol. 5, 1842, 2014 | 144 | 2014 |
Calculated electron affinity and stability of halogen-terminated diamond AK Tiwari, JP Goss, PR Briddon, NG Wright, AB Horsfall, R Jones, H Pinto, ... Physical Review B 84 (24), 245305, 2011 | 89 | 2011 |
Calculated electron affinity and stability of halogen-terminated diamond AK Tiwari, JP Goss, PR Briddon, NG Wright, AB Horsfall, R Jones, H Pinto, ... Physical Review B 84 (24), 245305, 2011 | 89 | 2011 |
Mechanisms of doping graphene H Pinto, R Jones, JP Goss, PR Briddon physica status solidi (a) 207 (9), 2131-2136, 2010 | 78 | 2010 |
Theory of the birefringence due to dislocations in single crystal CVD diamond H Pinto, R Jones Journal of Physics: Condensed Matter 21 (36), 364220, 2009 | 58 | 2009 |
Diffusion of nitrogen in diamond and the formation of A-centres R Jones, JP Goss, H Pinto, DW Palmer Diamond and Related Materials 53, 35-39, 2015 | 57 | 2015 |
Formation energy and migration barrier of a Ge vacancy from ab initio studies HM Pinto, J Coutinho, VJB Torres, S Öberg, PR Briddon Materials science in semiconductor processing 9 (4), 498-502, 2006 | 56 | 2006 |
On the diffusion of NV defects in diamond H Pinto, R Jones, DW Palmer, JP Goss, PR Briddon, S Öberg physica status solidi (a) 209 (9), 1765-1768, 2012 | 39 | 2012 |
First-principles studies of the effect of (001) surface terminations on the electronic properties of the negatively charged nitrogen-vacancy defect in diamond H Pinto, R Jones, DW Palmer, JP Goss, AK Tiwari, PR Briddon, NG Wright, ... Physical Review B 86 (4), 045313, 2012 | 30 | 2012 |
Unexpected change in the electronic properties of the Au-graphene interface caused by toluene H Pinto, R Jones, JP Goss, PR Briddon Physical Review B 82 (12), 125407, 2010 | 25 | 2010 |
First principles study of point defects in titanium oxycarbide HM Pinto, J Coutinho, MMD Ramos, F Vaz, L Marques Materials Science and Engineering: B 165 (3), 194-197, 2009 | 22 | 2009 |
Point and extended defects in chemical vapour deposited diamond H Pinto, R Jones, JP Goss, PR Briddon Journal of Physics: Conference Series 281 (1), 012023, 2011 | 16 | 2011 |
Theory of the surface effects on the luminescence of the NV− defect in nanodiamond H Pinto, R Jones, DW Palmer, JP Goss, PR Briddon, S Öberg physica status solidi (a) 208 (9), 2045-2050, 2011 | 14 | 2011 |
Thermodynamic stability and electronic properties of F‐and Cl‐terminated diamond AK Tiwari, JP Goss, PR Briddon, NG Wright, AB Horsfall, R Jones, H Pinto, ... physica status solidi (a) 209 (9), 1709-1714, 2012 | 13 | 2012 |
Deposition Order Controls the First Stages of a Metal–Organic Coordination Network on an Insulator Surface L Schüller, V Haapasilta, S Kuhn, H Pinto, R Bechstein, AS Foster, ... The Journal of Physical Chemistry C 120 (27), 14730-14735, 2016 | 12 | 2016 |
Optically active point defects in high quality single crystal diamond JP Goss, PR Briddon, H Pinto, R Jones physica status solidi (a) 207 (9), 2049-2053, 2010 | 12 | 2010 |
Optical properties of titanium oxycarbide thin films L Marques, HM Pinto, AC Fernandes, O Banakh, F Vaz, MMD Ramos Applied Surface Science 255 (10), 5615-5619, 2009 | 12 | 2009 |
Determination of the Optical Constants of VO2 and Nb-Doped VO2 Thin Films HM Pinto, J Correia, R Binions, C Piccirillo, IP Parkin, V Teixeira Materials Science Forum 587, 640-644, 2008 | 12 | 2008 |