‪Shreyasi Das‬ - ‪Google Scholar‬

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Co-authors

vandana kumariMaharaja Agrasen College, University of DelhiVerified email at mac.du.ac.in
Manoj SaxenaDepartment of Electronics, Deen Dayal Upadhyaya College, University of Delhi, Dwarka Sector-3, NewVerified email at ddu.du.ac.in
KHUSHWANT SEHRADepartment of Electronic Science, University of DelhiVerified email at ddu.du.ac.in

Shreyasi Das

Shreyasi Das

Electrical Engineering, Indian Institute of Technology Bombay

Verified email at iitb.ac.in

Electronic Devices HEMT RF


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
TCAD based investigation of single event transient effect in double channel AlGaN/GaN HEMT S Das, V Kumari, K Sehra, M Gupta, M Saxena IEEE Transactions on Device and Materials Reliability 21 (3), 416-423, 2021	11	2021
Gate Leakage Current Assessment of AlGaN/GaN HEMT with AlN Cap Layer S Das, V Kumari, M Gupta, M Saxena International Conference on Computers and Devices for Communication, 459-464, 2019	2	2019
On the double channel engineering of dual gate AlGaN/GaN HEMTs for heavy ion sensing applications S Das, V Kumari, K Sehra, M Gupta, M Saxena Micro and Nanostructures 182, 207653, 2023	1	2023
Modeling and Analysis of Lung Water Content Using RF Sensor P Ganguly, S Das, A Chakrabarti, JY Siddiqui IEEE Open Journal of Instrumentation and Measurement, 2024		2024

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