P. Soukiassian
P. Soukiassian
Commissariat à l'Energie Atomique et au Energies Alternatives; Professeur Université de Paris-Sud
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First direct observation of a nearly ideal graphene band structure
M Sprinkle, D Siegel, Y Hu, J Hicks, A Tejeda, A Taleb-Ibrahimi, ...
Physical Review Letters 103 (22), 226803, 2009
Chemistry and electronic properties of metal-organic semiconductor interfaces: Al, Ti, In, Sn, Ag, and Au on PTCDA
Y Hirose, A Kahn, V Aristov, P Soukiassian, V Bulovic, SR Forrest
Physical Review B 54 (19), 13748, 1996
Adsorbate-induced shifts of electronic surface states: Cs on the (100) faces of tungsten, molybdenum, and tantalum
P Soukiassian, R Riwan, J Lecante, E Wimmer, SR Chubb, AJ Freeman
Physical Review B 31 (8), 4911, 1985
Chemistry, diffusion, and electronic properties of a metal/organic semiconductor contact: In/perylenetetracarboxylic dianhydride
Y Hirose, A Kahn, V Aristov, P Soukiassian
Applied physics letters 68 (2), 217-219, 1996
Nanochemistry at the atomic scale revealed in hydrogen-induced semiconductor surface metallization
V Derycke, PG Soukiassian, F Amy, YJ Chabal, MD D'angelo, ...
Nature Materials 2 (4), 253-258, 2003
Direct observation of a β-SiC (100)-c (4× 2) surface reconstruction
P Soukiassian, F Semond, L Douillard, A Mayne, G Dujardin, L Pizzagalli, ...
Physical review letters 78 (5), 907, 1997
Atomic structure of the β-SiC (100)-(3× 2) surface
F Semond, P Soukiassian, A Mayne, G Dujardin, L Douillard, C Jaussaud
Physical review letters 77 (10), 2013, 1996
Bonding at the K/Si (100) 2 x 1 interface: A surface extended x-ray-absorption fine-structure study
T Kendelewicz, P Soukiassian, RS List, JC Woicik, P Pianetta, I Lindau, ...
Phys. Rev. B: Condens. Matter;(United States) 37 (12), 1988
Highly stable Si atomic line formation on the β-SiC (100) surface
P Soukiassian, F Semond, A Mayne, G Dujardin
Physical review letters 79 (13), 2498, 1997
Electronic properties of O 2 on Cs or Na overlayers adsorbed on Si (100) 21 from room temperature to 650° C
P Soukiassian, MH Bakshi, Z Hurych, TM Gentle
Physical Review B 35 (8), 4176, 1987
Soft-x-ray photoemission study of chemisorption and Fermi-level pinning at the Cs/GaAs (110) and K/GaAs (110) interfaces
T Kendelewicz, P Soukiassian, MH Bakshi, Z Hurych, I Lindau, WE Spicer
Physical Review B 38 (11), 7568, 1988
Electronic promoters and semiconductor oxidation: Alkali metals on Si (111) surfaces
A Franciosi, P Philip, S Chang, A Wall, A Raisanen, N Troullier, ...
Physical Review B 35 (2), 910, 1987
SiO2‐Si interface formation by catalytic oxidation using alkali metals and removal of the catalyst species
P Soukiassian, TM Gentle, MH Bakshi, Z Hurych
Journal of applied physics 60 (12), 4339-4341, 1986
Si-rich - and 3×3 surface oxidation and initial interface formation from 25 to 650 °C
F Amy, P Soukiassian, YK Hwu, C Brylinski
Physical Review B 65 (16), 165323, 2002
Electronic properties of alkali metal/silicon interfaces: A new picture
P Soukiassian, MH Bakshi, Z Hurych, TM Gentle
Surface Science Letters 221 (3), L759-L768, 1989
Multilayer epitaxial graphene grown on the surface; structure and electronic properties
M Sprinkle, J Hicks, A Tejeda, A Taleb-Ibrahimi, P Le Fevre, F Bertran, ...
Journal of Physics D: Applied Physics 43 (37), 374006, 2010
Carbon atomic chain formation on the β-SiC (100) surface by controlled sp→ sp 3 transformation
V Derycke, P Soukiassian, A Mayne, G Dujardin, J Gautier
Physical review letters 81 (26), 5868, 1998
Temperature-Induced Semiconducting Reversible Phase Transition on the -SiC(100) Surface
VY Aristov, L Douillard, O Fauchoux, P Soukiassian
Physical review letters 79 (19), 3700, 1997
Atomic Scale Oxidation of a Complex System: -SiC(0001)-( )
F Amy, H Enriquez, P Soukiassian, PF Storino, YJ Chabal, AJ Mayne, ...
Physical Review Letters 86 (19), 4342, 2001
Atomic scale control and understanding of cubic silicon carbide surface reconstructions, nanostructures and nanochemistry
PG Soukiassian, HB Enriquez
Journal of Physics: Condensed Matter 16 (17), S1611, 2004
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