Raghunandan Swain
Raghunandan Swain
Parala Maharaja Engineering College, Odisha, India
Verified email at pmec.ac.in
Title
Cited by
Cited by
Year
Enhanced Photodetection by Glancing Angle Deposited Vertically Aligned TiO2 Nanowires
B Shougaijam, R Swain, C Ngangbam, TR Lenka
IEEE Transactions on Nanotechnology 15 (3), 389-394, 2016
202016
Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices
K Jena, R Swain, TR Lenka
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2016
202016
Modeling of Forward Gate Leakage Current in MOSHEMT Using Trap-Assisted Tunneling and Poole-Frenkel Emission
R Swain, K Jena, TR Lenka
IEEE Transactions on Electron Devices 63 (6), 2346-2352, 2016
172016
Impact of oxide thickness on gate capacitance–Modelling and comparative analysis of GaN-based MOSHEMTs
K JENA, R SWAIN, TR LENKA
Pramana 85 (6), 1221-1232, 2015
172015
Interface DOS Dependent Analytical Model Development for DC Characteristics of Normally-off AlN/GaN MOSHEMT
R Swain, K Jena, TR Lenka
Superlattices and Microstructures 84, 54-65, 2015
142015
Impact of a drain field plate on the breakdown characteristics of AlInN/GaN MOSHEMT
K Jena, R Swain, TR Lenka
Journal of the Korean Physical Society 67 (9), 1592-1596, 2015
132015
Impact of barrier thickness on gate capacitance—modeling and comparative analysis of GaN based MOSHEMTs
K Jena, R Swain, TR Lenka
Journal of Semiconductors 36 (3), 034003, 2015
112015
Modeling and simulation of 2DEG density and intrinsic capacitances in AlInN/GaN MOSHEMT
G Amarnath, R Swain, TR Lenka
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2018
102018
Modeling and simulation of oxide dependent 2DEG sheet charge density in AlGaN/GaN MOSHEMT
R Swain, J Panda, K Jena, TR Lenka
Journal of Computational Electronics 14 (3), 754-761, 2015
92015
Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT
R Swain, K Jena, TR Lenka
Materials Science in Semiconductor Processing 53, 66-71, 2016
82016
Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT
J Panda, K Jena, R Swain, TR Lenka
Journal of Semiconductors 37 (4), 044003, 2016
82016
Modelling of capacitance and threshold voltage for ultrathin normally-off AlGaN/GaN MOSHEMT
R Swain, K Jena, TR Lenka
Pramana 88 (1), 1-7, 2017
72017
Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice-matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor
K Jena, R Swain, TR Lenka
IET Circuits, Devices & Systems 10 (5), 423-432, 2016
72016
Analysis of morphological, structural and electrical properties of annealed TiO2 nanowires deposited by GLAD technique
B Shougaijam, R Swain, C Ngangbam, TR Lenka
Journal of Semiconductors 38 (5), 053001, 2017
62017
Comparative study of AlN/GaN HEMT and MOSHEMT structures by varying oxide thickness
R Swain, K Jena, A Gaini, TR Lenka
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC), 128-131, 2014
52014
Physics‐based mathematical model of 2DEG sheet charge density and DC characteristics of AlInN/AlN/GaN MOSHEMT
K Jena, R Swain, TR Lenka
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2017
42017
Impact of AlN Spacer on Analog Performance of Lattice-Matched AlInN/AlN/GaN MOSHEMT
K Jena, R Swain, TR Lenka
Journal of Electronic Materials 45 (4), 2172-2177, 2016
42016
Model development for current–voltage and transconductance characteristics of normally-off AlN/GaN MOSHEMT
R Swain, K Jena, TR Lenka
Semiconductors 50 (3), 384-389, 2016
42016
Modelling of fin width dependent threshold voltage in fin shaped nano channel AlGaN/GaN HEMT
A Chakrabarty, R Swain
Superlattices and Microstructures 141, 106497, 2020
32020
DC & RF characteristics of normally-off AIN/GaN MOSHEMT by varying oxide thickness
R Swain, K Jena, TR Lenka, GN Dash, AK Panda
2015 IEEE International Conference on Electron Devices and Solid-State …, 2015
22015
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