Xingli Wang
Xingli Wang
French National Centre for Scientific Research (CNRS), France
Verified email at e.ntu.edu.sg
Title
Cited by
Cited by
Year
Vertical and in-plane heterostructures from WS 2/MoS 2 monolayers
Y Gong, J Lin, X Wang, G Shi, S Lei, Z Lin, X Zou, G Ye, R Vajtai, ...
Nature materials 13 (12), 1135-1142, 2014
16192014
Chemical Vapor Deposition Growth of Crystalline Monolayer MoSe2
X Wang, Y Gong, G Shi, WL Chow, K Keyshar, G Ye, R Vajtai, J Lou, Z Liu, ...
ACS nano 8 (5), 5125-5131, 2014
5852014
All metal nitrides solid‐state asymmetric supercapacitors
C Zhu, P Yang, D Chao, X Wang, X Zhang, S Chen, BK Tay, H Huang, ...
Advanced Materials 27 (31), 4566-4571, 2015
3202015
Optoelectronic Crystal of Artificial Atoms in Strain-Textured Molybdenum Disulphide
XZ H. Li, A.W. Contryman, X. Qian, S.M. Ardakani, Y. Gong, X. Wang, J.M ...
Nature Communications, 2015
2542015
Highly Sensitive Detection of Polarized Light Using Anisotropic 2D ReS2
F. Liu, S. Zheng, X. He, A. Chaturvedi, J. He, W.L. Chow, T.R. M, X. Wang, J ...
Advanced Functional Materials 26 (8), 1169-1177, 2016
2352016
MoS2/TiO2 Edge-On Heterostructure for Efficient Photocatalytic Hydrogen Evolution
ZL H. He, J. Lin, W. Fu, X. Wang, H. Wang, Q. Zeng, Q. Gu, Y. Li, C. Yan, B ...
Advanced Energy Materials, 2016
2022016
High-performance microsupercapacitors based on two-dimensional graphene/manganese dioxide/silver nanowire ternary hybrid film
W Liu, C Lu, X Wang, RY Tay, BK Tay
ACS nano 9 (2), 1528-1542, 2015
1942015
Electronic properties of bulk and monolayer TMDs: theoretical study within DFT framework (GVJ‐2e method)
J Gusakova, X Wang, LL Shiau, A Krivosheeva, V Shaposhnikov, ...
physica status solidi (a) 214 (12), 1700218, 2017
1372017
High mobility 2D palladium diselenide field‐effect transistors with tunable ambipolar characteristics
WL Chow, P Yu, F Liu, J Hong, X Wang, Q Zeng, CH Hsu, C Zhu, J Zhou, ...
Advanced Materials 29 (21), 1602969, 2017
1372017
In situ fabrication of three-dimensional, ultrathin graphite/carbon nanotube/NiO composite as binder-free electrode for high-performance energy storage
BKT W. Liu, C. Lu, X. Wang, K. Liang
Journal of Materials Chemistry A 3, 624-633, 2015
1332015
Ultrafast-Charging Supercapacitors Based on Corn-Like Titanium Nitride Nanostructures
HJF 7. P. Yang, D. Chao, C. Zhu, X. Xia, Y. Zhang, X. Wang, P. Sun, B.K. Tay ...
Advanced Science, 2015
115*2015
Stacking-Dependent Interlayer Coupling in Trilayer MoS2 with Broken Inversion Symmetry
JYJXXWLLJLKBKTSCWZZLZ Shen
Nano Letters, 2015
1112015
Paper-based all-solid-state flexible micro-supercapacitors with ultra-high rate and rapid frequency response capabilities
AY W. Liu, C. Lu, H. Li, Y. Tay, L. Sun, X. Wang, W.L. Chow, X. Wang, B.K ...
Journal of Materials Chemistry A 4, 3754-3764, 2016
98*2016
Controlled Synthesis of Organic/Inorganic van der Waals Solid for Tunable Light–Matter Interactions
L. Niu, X. Liu, C. Cong, C. Wu, D. Wu, T.R. Chang, H. Wang, Q. Zeng, J. Zhou ...
Advanced Materials 27 (47), 7800-7808, 2015
962015
Direct observation of ultrafast plasmonic hot electron transfer in the strong coupling regime
H Shan, Y Yu, X Wang, Y Luo, S Zu, B Du, T Han, B Li, Y Li, J Wu, F Lin, ...
Light: Science & Applications 8 (1), 1-9, 2019
912019
Tailoring MoS2 Exciton–Plasmon Interaction by Optical Spin–Orbit Coupling
Z Li, Y Li, T Han, X Wang, Y Yu, B Tay, Z Liu, Z Fang
ACS nano 11 (2), 1165-1171, 2017
872017
Chemical Vapor Deposition of High-Quality and Atomically Layered ReS 2
XHFLPHWFXWQZWZZ Liu
Small, 2015
852015
Ultrasensitive 2D Bi2O2Se Phototransistors on Silicon Substrates
Q Fu, C Zhu, X Zhao, X Wang, A Chaturvedi, C Zhu, X Wang, Q Zeng, ...
Advanced Materials 31 (1), 1804945, 2019
842019
A systematic study of the atmospheric pressure growth of large-area hexagonal crystalline boron nitride film
GMET R. Tay, X. Wang, S.H. Tsang, G.C. Loh, R.S. Singh, H. Li
J. Mater. Chem. C 2, 1650-1657, 2014
682014
Rapid and selective H2S detection of hierarchical ZnSnO3 nanocages
Y Zeng, K Zhang, X Wang, Y Sui, B Zou, W Zheng, G Zou
Sensors and Actuators B: Chemical 159 (1), 245-250, 2011
492011
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