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Sikha Mishra
Sikha Mishra
S.O.A Deemed to be University
Verified email at soa.ac.in
Title
Cited by
Cited by
Year
Performance analysis of SOI MOSFET with rectangular recessed channel
M Singh, S Mishra, SS Mohanty, GP Mishra
Advances in Natural Sciences: Nanoscience and Nanotechnology 7 (1), 015010, 2016
292016
Variation of source gate workfunction on the performance of dual material gate rectangular recessed channel SOI‐MOSFET
S Mishra, U Bhanja, GP Mishra
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2019
142019
An extensive investigation of work function modulated trapezoidal recessed channel MOSFET
AS Lenka, S Mishra, S Mishra, U Bhanja, GP Mishra
Superlattices and Microstructures 111, 878-888, 2017
122017
Impact of structural parameters on DC performance of recessed channel SOI-MOSFET
S Mishra, U Bhanja, GP Mishra
International Journal of Nanoparticles 11 (2), 140-153, 2019
112019
Design of MCM based wireless system using wavelet packet network & its PAPR analysis
MN Mohanty, S Mishra
2013 International Conference on Circuits, Power and Computing Technologies …, 2013
112013
Dielectrically modulated hetero channel double gate MOSFET as a label free biosensor
SS Mohanty, S Mishra, M Mohapatra, GP Mishra
Transactions on Electrical and Electronic Materials 23 (2), 156-163, 2022
82022
Impact of biomolecules position and filling area on the sensitivity of hetero stack gate MOSFET
SS Mohanty, S Mishra, M Mohapatra, GP Mishra
Microelectronics Journal 126, 105504, 2022
72022
Hetero channel double gate MOSFET for Label-free biosensing application
SS Mohanty, S Mishra, M Mohapatra, GP Mishra
Silicon 14 (13), 8109-8118, 2022
62022
Effect of RRC on SOI MOSFET to improve the SCE
S Mishra, AS Lenka, SS Mohanty, U Bhanja, GP Mishra
2017 Devices for Integrated Circuit (DevIC), 536-540, 2017
62017
Design of wavelet packet based model for multi carrier modulation
B Mishra, S Mishra, MN Mohanty
International Journal of Engineering Science and Technology 4 (04), 1572-1575, 2012
62012
Estimation of MIMO-OFDM Based Channel for High Data Rate Wireless Communication
D Mishra, S Mishra, MN Mohanty
International Journal of Computer Science and Information Technologies …, 2011
52011
Influence of Structural Parameters on the Behavior of an Asymmetric Linearly Graded Workfunction Trapezoidal Gate SOI MOSFET
S Mishra, GP Mishra
Journal of Electronic Materials 48 (10), 6607-6616, 2019
42019
Investigation of a nanoscale grooved stepped gate MOSFET to explore the self-heating effect
S Bhol, S Mishra, SS Mohanty, GP Mishra
2019 Devices for Integrated Circuit (DevIC), 49-52, 2019
32019
Grooved-gate silicon-on-nothing (SON) MOSFET: evidence for suppressing SCEs
S Mishra, SS Mohanty, S Bhol, GP Mishra
Nanomaterials and Energy 8 (2), 159-166, 2019
22019
Gate electrode stacked source/drain SON trench MOSFET for biosensing application
S Mishra, SS Mohanty, GP Mishra
Physica Scripta 98 (12), 125027, 2023
12023
High-Performance Exploration of Buried Channel In0.53Ga0.47/InP Stepped Poly Gate MOSFET Using Asymmetric Underlap Gate Spacer
SS Mohanty, S Mishra, M Mohapatra, GP Mishra
IETE Technical Review 39 (6), 1372-1382, 2022
12022
Impact of bio-target location and their fill-in factor on the sensitivity of hetero channel double gate MOSFET label-free biosensor
SS Mohanty, S Mishra, M Mohapatra, GP Mishra
Advances in Natural Sciences: Nanoscience and Nanotechnology 12 (2), 025012, 2021
12021
Sub-threshold performance analysis of multi-layered trapezoidal trench gate silicon on nothing MOSFET for low power applications
S Mishra, SS Mohanty, GP Mishra
2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), 214-218, 2020
12020
An Extensive Simulation Based Study of Symmetrical Work Function Variation of In0.53Ga0.47As/InP DG Hetero MOSFET
SS Mohanty, S Mishra, D Sathpathy, GP Mishra
ICICCT 2019–System Reliability, Quality Control, Safety, Maintenance and …, 2020
12020
An Analytical Modeling and Performance Analysis of Graded Work Function Gate Recessed Channel SOI-MOSFET
S Mishra, U Bhanja, GP Mishra
Nanoscience & Nanotechnology-Asia 9 (4), 504-511, 2019
12019
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