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MONIKA SHARMA
MONIKA SHARMA
Semiconductor Device Research Laboratory, University of Delhi, South Campus, Delhi, India
Verified email at ieee.org
Title
Cited by
Cited by
Year
Comparative study of InGaN and InGaAs based dopingless TFET with different gate engineering techniques
M Sharma, R Narang, M Saxena, M Gupta
Advances in Natural Sciences: Nanoscience and Nanotechnology 10 (3), 035009, 2019
52019
Optimized DL-TFET design for enhancing its performance parameters by using different engineering methods
M Sharma, R Narang, M Saxena, M Gupta
IETE Technical Review 38 (4), 429-437, 2021
42021
Investigation of Gate All Around Junctionless Nanowire Transistor with Arbitrary Polygonal Cross Section
M Sharma, M Gupta, R Narang, M Saxena
2018 4th International Conference on Devices, Circuits and Systems (ICDCS …, 2018
32018
Modeling and simulation-based investigation of 2-D symmetric double gate Dopingless-TFET and its circuit performance for low-power applications
M Sharma, R Narang, M Saxena, M Gupta
IETE Technical Review, 1-12, 2021
22021
Effect of interface charges on InGaN and InGaAs based dopingless TFET and its Circuit analysis
M Sharma, R Narang, M Saxena, M Gupta
2020 5th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2020
12020
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