Y. H. Lin
Y. H. Lin
Department of Physics, National Taiwan University
Verified email at ntu.edu.tw
Cited by
Cited by
Single-crystal atomic layer deposited Y 2 O 3 on GaAs (001)–growth, structural, and electrical characterization
SY Wu, KH Chen, YH Lin, CK Cheng, CH Hsu, J Kwo, M Hong
Microelectronic Engineering 147, 310-313, 2015
Single-Crystal Y2O3 Epitaxially on GaAs (001) and (111) Using Atomic Layer Deposition
YH Lin, CK Cheng, KH Chen, CH Fu, TW Chang, CH Hsu, J Kwo, M Hong
Materials 8 (10), 7084-7093, 2015
Low interfacial trap density and high-temperature thermal stability in atomic layer deposited single crystal Y2O3/n-GaAs (001)
YH Lin, CH Fu, KY Lin, KH Chen, TW Chang, JR Kwo, M Hong
Applied Physics Express 9 (8), 081501, 2016
Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process
CH Fu, YH Lin, WC Lee, TD Lin, RL Chu, LK Chu, P Chang, MH Chen, ...
Microelectronic Engineering 147, 330-334, 2015
In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In) GaAs surfaces: electronic and electric structures
TW Pi, YH Lin, YT Fanchiang, TH Chiang, CH Wei, YC Lin, GK Wertheim, ...
Nanotechnology 26 (16), 164001, 2015
Strongly enhanced spin current in topological insulator/ferromagnetic metal heterostructures by spin pumping
CN Wu, YH Lin, YT Fanchiang, HY Hung, HY Lin, PH Lin, JG Lin, SF Lee, ...
Journal of Applied Physics 117 (17), 17D148, 2015
Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic…
M Hong, HW Wan, KY Lin, YC Chang, MH Chen, YH Lin, TD Lin, TW Pi, ...
Applied Physics Letters 111 (12), 123502, 2017
Surface electronic structure of epi germanium (001)-2 1
YT Cheng, YH Lin, WS Chen, KY Lin, HW Wan, CP Cheng, HH Cheng, ...
Applied Physics Express 10 (7), 075701, 2017
Analysis of border and interfacial traps in ALD-Y2O3 and -Al2O3 on GaAs via electrical responses - A comparative study
TW Chang, KY Lin, YH Lin, LB Young, J Kwo, M Hong
Microelectronic Engineering 178, 199-203, 2017
Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-24 interface: An in-situ synchrotron radiation photoemission study
CP Cheng, WS Chen, KY Lin, GJ Wei, YT Cheng, YH Lin, HW Wan, TW Pi, ...
Applied Surface Science 393, 294-298, 2017
Ultra-high thermal stability and extremely low Dit on HfO2/p-GaAs(001) interface
HW Wan, YH Lin, KY Lin, TW Chang, RF Cai, J Kwo, M Hong
Microelectronic Engineering 178, 154-157, 2017
Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
MH K.Y.Lin, H.W.Wan, K.H.M.Chen, Y.T.Fanchiang, W.S.Chen, Y.H.Lin, Y.T.Cheng ...
Journal of Crystal Growth 512, 223, 2019
Epitaxial ferromagnetic Fe3Si on GaAs(111)A with atomically smooth surface and interface
YC Liu, YW Chen, SC Tseng, MT Chang, SC Lo, YH Lin, CK Cheng, ...
Applied Physics Letters 107 (12), 122402, 2015
Single-crystal rare earth oxide grown on III-V compound
K Chen, M Hong, J Kwo, YH Lin, KY Lin
US Patent 10,283,349, 2019
Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs(001)
KY Lin, LB Young, CK Cheng, KH Chen, YH Lin, HW Wan, RF Cai, SC Lo, ...
Microelectronic Engineering 178, 271-274, 2017
Semiconductor device and manufacturing method thereof
M Hong, JN Kwo, Y Lin, KY Lin, Y Bo-Yu, WAN Hsien-Wen
US Patent 10,748,774, 2020
Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition
LB Young, CK Cheng, KY Lin, YH Lin, HW Wan, RF Cai, SC Lo, MY Li, ...
Crystal Growth & Design 19 (4), 2030-2036, 2019
Interfacial characteristics of Y2O3/GaSb (001) grown by molecular beam epitaxy and atomic layer deposition
YH Lin, KY Lin, WJ Hsueh, LB Young, TW Chang, JI Chyi, TW Pi, J Kwo, ...
Journal of Crystal Growth 477, 164-168, 2017
Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A and (001) using atomic layer deposition
CK Cheng, LB Young, KY Lin, YH Lin, HW Wan, GJ Lu, MT Chang, ...
Microelectronic Engineering 178, 125-127, 2017
Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance
TW Pi, WS Chen, YH Lin, YT Cheng, GJ Wei, KY Lin, CP Cheng, J Kwo, ...
Applied Physics Letters 110 (5), 052107, 2017
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