C.W. Tu
C.W. Tu
Electrical and Computer Engineering, Univesity of California, San Diego
Verified email at ucsd.edu
Cited by
Cited by
Physical properties of III-V semiconductor compounds
S Adachi
John Wiley & Sons, 1992
Bowing parameter of the band-gap energy of
WG Bi, CW Tu
Applied physics letters 70 (12), 1608-1610, 1997
Chemical mapping of semiconductor interfaces at near-atomic resolution
A Ourmazd, DW Taylor, J Cunningham, CW Tu
Physical review letters 62 (8), 933, 1989
Ultrafast phase relaxation of excitons via exciton-exciton and exciton-electron collisions
L Schultheis, J Kuhl, A Honold, CW Tu
Physical review letters 57 (13), 1635, 1986
Density of states and de haas—van alphen effect in two-dimensional electron systems
JP Eisenstein, HL Stormer, V Narayanamurti, AY Cho, AC Gossard, ...
Physical review letters 55 (8), 875, 1985
Collision broadening of two-dimensional excitons in a GaAs single quantum well
A Honold, L Schultheis, J Kuhl, CW Tu
Physical Review B 40 (9), 6442, 1989
Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy
IA Buyanova, WM Chen, G Pozina, JP Bergman, B Monemar, HP Xin, ...
Applied physics letters 75 (4), 501-503, 1999
Optical dephasing of homogeneously broadened two-dimensional exciton transitions in GaAs quantum wells
L Schultheis, A Honold, J Kuhl, K Köhler, CW Tu
Physical Review B 34 (12), 9027, 1986
Nature of the fundamental band gap in alloys
W Shan, W Walukiewicz, KM Yu, J Wu, JW Ager III, EE Haller, HP Xin, ...
Applied Physics Letters 76 (22), 3251-3253, 2000
Donor neutralization in GaAs (Si) by atomic hydrogen
J Chevallier, WC Dautremont‐Smith, CW Tu, SJ Pearton
Applied physics letters 47 (2), 108-110, 1985
GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy
HP Xin, CW Tu
Applied physics letters 72 (19), 2442-2444, 1998
Lifetime enhancement of two-dimensional excitons by the quantum-confined Stark effect
HJ Polland, L Schultheis, J Kuhl, EO Göbel, CW Tu
Physical review letters 55 (23), 2610, 1985
Direct determination of electron effective mass in GaNAs/GaAs quantum wells
PN Hai, WM Chen, IA Buyanova, HP Xin, CW Tu
Applied Physics Letters 77 (12), 1843-1845, 2000
Photonic-wire laser
JP Zhang, DY Chu, SL Wu, ST Ho, WG Bi, CW Tu, RC Tiberio
Physical review letters 75 (14), 2678, 1995
Self-assembled GaInNAs quantum dots for 1.3 and 1.55 μm emission on GaAs
M Sopanen, HP Xin, CW Tu
Applied Physics Letters 76 (8), 994-996, 2000
Hydrogenation of shallow‐donor levels in GaAs
SJ Pearton, WC Dautremont‐Smith, J Chevallier, CW Tu, KD Cummings
Journal of applied physics 59 (8), 2821-2827, 1986
Direct measurement of resonant and nonresonant tunneling times in asymmetric coupled quantum wells
DY Oberli, J Shah, TC Damen, CW Tu, TY Chang, DAB Miller, JE Henry, ...
Physical Review B 40 (5), 3028, 1989
Picosecond phase coherence and orientational relaxation of excitons in GaAs
L Schultheis, J Kuhl, A Honold, CW Tu
Physical review letters 57 (14), 1797, 1986
Optical anomalies of the two-dimensional electron gas in the extreme magnetic quantum limit
D Heiman, BB Goldberg, A Pinczuk, CW Tu, AC Gossard, JH English
Physical review letters 61 (5), 605, 1988
Plasmon and magnetoplasmon excitation in two-dimensional electron space-charge layers on GaAs
E Batke, D Heitmann, CW Tu
Physical Review B 34 (10), 6951, 1986
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