| GaN IMPATT diode: a photo-sensitive high power terahertz source M Mukherjee, N Mazumder, SK Roy, K Goswami Semiconductor Science and Technology 22 (12), 1258, 2007 | 113 | 2007 |
| Silicon Carbide: Materials, Processing and Applications in Electronic Devices M Mukherjee BoD–Books on Demand, 2011 | 60 | 2011 |
| Photosensitivity analysis of gallium nitride and silicon carbide terahertz IMPATT oscillators: comparison of theoretical reliability and study on experimental feasibility M Mukherjee, N Mazumder, SK Roy IEEE Transactions on Device and Materials Reliability 8 (3), 608-620, 2008 | 52 | 2008 |
| Prospects of 4H-SiC double drift region IMPATT device as a photo-sensitive high-power source at 0.7 terahertz frequency regime M Mukherjee, N Mazumder, SK Roy Active and Passive Electronic Components 2008, 2008 | 35 | 2008 |
| Bias current optimization of Wurtzite-GaN DDR IMPATT diode for high power operation at THz frequencies S Banerjee, M Mukherjee, JP Banerjee International Journal of Advanced Science and Technology 16, 11-20, 2010 | 34 | 2010 |
| Optically modulated III–V nitride-based top-mounted and flip-chip IMPATT oscillators at terahertz regime: studies on the shift of avalanche transit time phase delay due to … M Mukherjee, SK Roy IEEE transactions on electron devices 56 (7), 1411-1417, 2009 | 31 | 2009 |
| Multi-band microstrip slotted patch antenna for application in microwave communication A Das, B Datta, S Chatterjee, B Sinhamahapatra, S Jana, M Mukherjee, ... International Journal of Science and Advanced Technology,(ISSN 2221-8386) 2 …, 2012 | 30 | 2012 |
| Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices Circuits and Systems M Mukherjee BoD–Books on Demand, 2010 | 29 | 2010 |
| Dynamic characteristics of III-V and IV-IV semiconductor based transit time devices in the terahertz regime: a comparative analysis M Mukherjee, S Banerjee, JP Banerjee Terahertz Science and Technology 3 (3), 97-109, 2010 | 28 | 2010 |
| Wide-Bandgap III–V nitride based avalanche transit-time diode in Terahertz regime: Studies on the effects of punch through on high frequency characteristics and series … M Mukherjee, SK Roy Current Applied Physics 10 (2), 646-651, 2010 | 27 | 2010 |
| Effects of tunnelling current on millimetre-wave IMPATT devices A Acharyya, M Mukherjee, JP Banerjee International Journal of Electronics 102 (9), 1429-1456, 2015 | 26 | 2015 |
| Influence of tunnel current on DC and dynamic properties of Si Based terahertz IMPATT source A Acharyya, M Mukherjee, JP Banerjee Terahertz Sci. & Tech. 4 (1), 26-41, 2011 | 23 | 2011 |
| Noise performance of millimeter-wave silicon based mixed tunneling avalanche transit time (MITATT) diode A Acharyya, M Mukherjee, JP Banerjee International Journal of Electronics and Communication Engineering 4 (3 …, 2010 | 22 | 2010 |
| III–V super-lattice SPST/SPMT pin switches for THz communication: theoretical reliability and experimental feasibility studies A Kundu, MR Kanjilal, M Mukherjee Microsystem Technologies 27, 539-554, 2021 | 21 | 2021 |
| Design of compact patch antenna for multi-band microwave communication B Datta, A Das, S Chatterjee, B Sinhamahapatra, S Jana, M Mukherjee, ... National Conference on Sustainable Development through Innovative Research …, 2012 | 21 | 2012 |
| Design and characterization of asymetrical super-lattice Si/4H-SiC pin photo diode array: a potential opto-sensor for future applications in bio-medical domain A Kundu, S Adhikari, A Das, MR Kanjilal, M Mukherjee Microsystem Technologies 27, 569-584, 2021 | 20 | 2021 |
| Optically illuminated 4H-SiC terahertz IMPATT device M Mukherjee, N Mazumder Egypt J Solids 30 (1), 87, 2007 | 20 | 2007 |
| Heat sink design for IMPATT diode sources with different base materials operating at 94 GHz A Acharyya, J Mukherjee, M Mukherjee, JP Banerjee Archives of Physics Research 2 (1), 107, 2011 | 16 | 2011 |
| Single layer monopole hexagonal microstrip patch antenna for satellite television S Jana, B Sinhamahapatra, S Dey, A Das, B Datta, M Mukherjee, ... International Journal of Soft Computing and Engineering, 2231-2307, 2013 | 15 | 2013 |
| Photosensitivity analysis of GaN and SiC Terahertz IMPATT Oscillator: Comparison of theoretical reliability and study on experimental feasibility M Mukherjee, N Mazumder, SK Roy IEEE Trans. On Device and Material Reliability 3 (8), 608-620, 2008 | 15 | 2008 |
Bipa Datta (Majumdar)Brainware Group of Institutions - SDETVerified email at brainwareuniversity.ac.in
