| Performance evaluation of dielectrically modulated extended gate single cavity InGaAs/Si HTFET based label-free biosensor considering non-ideal issues S Mukhopadhyay, D Sen, B Goswami, SK Sarkar IEEE Sensors Journal 21 (4), 4739-4746, 2020 | 57 | 2020 |
| Evidence of thermionic emission in forward biased β-Ga2O3 Schottky diodes at Boltzmann doping limit S Mukhopadhyay, LAM Lyle, H Pal, KK Das, LM Porter, B Sarkar Journal of Applied Physics 131 (2), 2022 | 15 | 2022 |
| Self-powered ultraviolet photodiode based on lateral polarity structure GaN films S Mukhopadhyay, H Pal, SR Narang, C Guo, J Ye, W Guo, B Sarkar Journal of Vacuum Science & Technology B 39 (5), 2021 | 9 | 2021 |
| Significant reduction in sidewall damage related external quantum efficiency (EQE) drop in red InGaN microLEDs (∼ 625 nm at 1 A cm− 2) with device sizes down to 3 μm S Sanyal, Q Lin, T Shih, S Zhang, G Wang, S Mukhopadhyay, J Vigen, ... Japanese Journal of Applied Physics 63 (3), 030904, 2024 | 1 | 2024 |
| First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD S Mukhopadhyay, S Sanyal, G Wang, C Gupta, SS Pasayat Crystals 13 (10), 1457, 2023 | 1 | 2023 |
| MOCVD of InGaN on ScAlMgO4 on Al2O3 Substrates with Improved Surface Morphology and Crystallinity G Wang, Y Li, J Kirch, Y Han, J Chen, S Marks, S Mukhopadhyay, R Liu, ... Crystals 13 (3), 446, 2023 | 1 | 2023 |
| Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with free carrier concentration using close-coupled … S Mukhopadhyay, P Seshadri, M Haque, S Xie, R Bai, S Sanyal, G Wang, ... arXiv preprint arXiv:2407.10342, 2024 | | 2024 |
| Understanding of multiway heat extraction using peripheral diamond in an AlGaN/GaN high electron mobility transistor by electrothermal simulations K Gohel, L Zhou, S Mukhopadhyay, SS Pasayat, C Gupta Semiconductor Science and Technology 39 (7), 075016, 2024 | | 2024 |
| Demonstration of Watt Level 375 nm Short Cavity Laser Diode with Etched Facets Q Lin, G Wang, C Liu, S Sanyal, S Mukhopadhyay, M Dwyer, M Seitz, ... IEEE Photonics Technology Letters, 2024 | | 2024 |
| Optimization of p-type contact for electrical injection and light extraction for 365 nm UV-A LEDs Y Li, G Wang, Q Lin, S Xie, W Zhang, T Shih, J Vigen, S Mukhopadhyay, ... Semiconductor Science and Technology 39 (6), 065004, 2024 | | 2024 |
| Crack-Free High-Composition (> 35%) Thick-Barrier (> 30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (< 250 Ω/□) S Mukhopadhyay, C Liu, J Chen, M Tahmidul Alam, S Sanyal, R Bai, ... Crystals 13 (10), 1456, 2023 | | 2023 |
