Ph.D. Student, Dept. of E.C.E, University of Wisconsin, Madison
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Performance evaluation of dielectrically modulated extended gate single cavity InGaAs/Si HTFET based label-free biosensor considering non-ideal issues
S Mukhopadhyay, D Sen, B Goswami, SK Sarkar
IEEE Sensors Journal 21 (4), 4739-4746, 2020
Evidence of thermionic emission in forward biased β-Ga2O3 Schottky diodes at Boltzmann doping limit
S Mukhopadhyay, LAM Lyle, H Pal, KK Das, LM Porter, B Sarkar
Journal of Applied Physics 131 (2), 2022
Self-powered ultraviolet photodiode based on lateral polarity structure GaN films
S Mukhopadhyay, H Pal, SR Narang, C Guo, J Ye, W Guo, B Sarkar
Journal of Vacuum Science & Technology B 39 (5), 2021
Significant reduction in sidewall damage related external quantum efficiency (EQE) drop in red InGaN microLEDs (~625nm at 1 A/cm2) with device sizes down to 3μm
S Sanyal, Q Lin, T Shih, S Zhang, G Wang, S Mukhopadhyay, J Vigen, ...
Japanese Journal of Applied Physics, 2024
First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD
S Mukhopadhyay, S Sanyal, G Wang, C Gupta, SS Pasayat
Crystals 13 (10), 1457, 2023
MOCVD of InGaN on ScAlMgO4 on Al2O3 Substrates with Improved Surface Morphology and Crystallinity
G Wang, Y Li, J Kirch, Y Han, J Chen, S Marks, S Mukhopadhyay, R Liu, ...
Crystals 13 (3), 446, 2023
Understanding of multiway heat extraction using peripheral diamond in an AlGaN/GaN high electron mobility transistor by electrothermal simulations
K Gohel, L Zhou, S Mukhopadhyay, SS Pasayat, C Gupta
Semiconductor Science and Technology 39 (7), 075016, 2024
Demonstration of Watt Level 375 nm Short Cavity Laser Diode with Etched Facets
Q Lin, G Wang, C Liu, S Sanyal, S Mukhopadhyay, M Dwyer, M Seitz, ...
IEEE Photonics Technology Letters, 2024
Optimization of p-type contact for electrical injection and light extraction for 365 nm UV-A LEDs
Y Li, G Wang, Q Lin, S Xie, W Zhang, T Shih, J Vigen, S Mukhopadhyay, ...
Semiconductor Science and Technology 39 (6), 065004, 2024
Crack-Free High-Composition (> 35%) Thick-Barrier (> 30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (< 250 Ω/□)
S Mukhopadhyay, C Liu, J Chen, M Tahmidul Alam, S Sanyal, R Bai, ...
Crystals 13 (10), 1456, 2023
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