| Part I: Physical Insights Into Dynamic RON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs SD Gupta, V Joshi, RR Chaudhuri, M Shrivastava IEEE Transactions on Electron Devices 68 (11), 5720-5727, 2021 | 20 | 2021 |
| On the channel hot-electron’s interaction with C-doped GaN buffer and resultant gate degradation in AlGaN/GaN HEMTs RR Chaudhuri, V Joshi, SD Gupta, M Shrivastava IEEE Transactions on Electron Devices 68 (10), 4869-4876, 2021 | 19 | 2021 |
| Interplay between surface and buffer traps in governing breakdown characteristics of AlGaN/GaN HEMTs—Part II V Joshi, SD Gupta, RR Chaudhuri, M Shrivastava IEEE Transactions on Electron Devices 68 (1), 80-87, 2020 | 16 | 2020 |
| Physical insights into the impact of surface traps on breakdown characteristics of AlGaN/GaN HEMTs—Part I V Joshi, SD Gupta, RR Chaudhuri, M Shrivastava IEEE Transactions on Electron Devices 68 (1), 72-79, 2020 | 13 | 2020 |
| Novel surface passivation scheme by using p-type AlTiO to mitigate dynamic ON resistance behavior in AlGaN/GaN HEMTs—Part II SD Gupta, V Joshi, RR Chaudhuri, M Shrivastava IEEE Transactions on Electron Devices 68 (11), 5728-5735, 2021 | 9 | 2021 |
| Physical insights into electron trapping mechanism in the carbon-doped GaN buffer in AlGaN/GaN HEMTs and its impact on dynamic on-resistance V Joshi, RR Chaudhuri, SD Gupta, M Shrivastava IEEE Transactions on Electron Devices, 2023 | 7 | 2023 |
| Understanding the Apparent Non-Reliability in the Sensing Characteristics of MnO2 Self-Assembled Hierarchical Nanostructure RR Chaudhuri, D Acharyya, S Ghosal, P Chung, M Ho, P Bhattacharyya IEEE Transactions on Device and Materials Reliability 18 (4), 628-635, 2018 | 7 | 2018 |
| Interplay of device design and carbon-doped GaN buffer parameters in determining dynamic in AlGaN/GaN HEMTs V Joshi, SD Gupta, RR Chaudhuri, M Shrivastava IEEE Transactions on Electron Devices 69 (11), 6035-6042, 2022 | 5 | 2022 |
| Unique gate bias dependence of dynamic on-resistance in MIS-gated AlGaN/GaN HEMTs and its dependence on gate control over the 2-DEG SD Gupta, V Joshi, RR Chaudhuri, M Shrivastava IEEE Transactions on Electron Devices 69 (3), 1608-1611, 2022 | 5 | 2022 |
| Hierarchical MnO2 Nanoflowers Based Efficient Room Temperature Alcohol Sensor D Acharyya, S Ghosal, R Roychaudhuri, P Bhattacharyya 2018 IEEE SENSORS, 1-4, 2018 | 5 | 2018 |
| Noise analysis-resonant frequency-based combined approach for concomitant detection of unknown vapor type and concentration D Acharyya, RR Chaudhuri, P Bhattacharyya IEEE Transactions on Instrumentation and Measurement 68 (8), 3004-3011, 2018 | 5 | 2018 |
| Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic RON of AlGaN/GaN HEMTs Under Semi-on State SD Gupta, V Joshi, RR Chaudhuri, M Shrivastava IEEE Transactions on Electron Devices 69 (12), 6934-6939, 2022 | 4 | 2022 |
| On the root cause of dynamic ON resistance behavior in AlGaN/GaN HEMTs SD Gupta, V Joshi, RR Chaudhuri, A kr Singh, S Guha, M Shrivastava 2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020 | 4 | 2020 |
| Morphological evolution of MnO2 based nanostructures by tuning the reaction time R Roychaudhuri, D Acharyya, P Bhattacharyya 2018 International Symposium on Devices, Circuits and Systems (ISDCS), 1-4, 2018 | 3 | 2018 |
| Design of 1-bit Full Adder using β-driven threshold element M Paul, N Kapoor, R Modak, T Paul, RR Chaudhuri, SD Chowdhury, ... 2017 1st International Conference on Electronics, Materials Engineering and …, 2017 | 3 | 2017 |
| Design of 1-bit full adder using NMOS based negative differential resistance SD Chowdhury, RR Chaudhuri, M Sarkar 2017 Devices for Integrated Circuit (DevIC), 630-636, 2017 | 3 | 2017 |
| Onset of chaos for different non linear systems by varying system parameters M Sarkar, RR Chaudhuri, SD Chowdhury, NK Thakur, S Chowdhury Advances in Optical Science and Engineering: Proceedings of the First …, 2015 | 3 | 2015 |
| Signatures of positive gate over-drive induced hole trap generation and its impact on p-GaN gate stack instability in AlGaN/GaN HEMTs RR Malik, V Joshi, RR Chaudhuri, MA Mir, Z Khan, AN Shaji, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2023 | 2 | 2023 |
| Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs MA Mir, V Joshi, RR Chaudhuri, MA Munshi, RR Malik, M Shrivastava 2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023 | 2 | 2023 |
| Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors S Dutta Gupta, V Joshi, R Roy Chaudhuri, M Shrivastava Journal of Applied Physics 130 (1), 2021 | 2 | 2021 |
Mayank ShrivastavaIndian Institute of Science BangaloreVerified email at iisc.ac.in
