| Properties of indium tin oxide thin films deposited on polymer substrates S Mohamed, F El-Hossary, G Gamal, M Kahlid Acta physica polonica A 115 (3), 704-708, 2009 | 79 | 2009 |
| Effect of iron additives on the microstructure of hydroxyapatite GA Gamal, FA Al-Mufadi, AH Said Engineering, Technology & Applied Science Research 3 (6), 532-539, 2013 | 46 | 2013 |
| In vitro study of iron doped hydroxyapatite KMT Ereiba, AG Mostafa, GA Gamal, AH Said J. Biophys. Chem 4 (04), 122-130, 2013 | 37 | 2013 |
| The effects of composition and heat treatment on the structural and optical properties of Ge15Te85− xCux thin films M Dongol, M Abou Zied, GA Gamal, A Ei-Denglawey Physica B: Condensed Matter 353 (3-4), 169-175, 2004 | 30 | 2004 |
| Single crystal growth and electrical properties of gallium monotelluride GA Gamal, MM Nassary, SA Hussein, AT Nagat Crystal Research and Technology 27 (5), 629-635, 1992 | 23 | 1992 |
| Photoelectric studies of gallium monosulfide single crystals GA Gamal, MI Azad The European Physical Journal-Applied Physics 32 (1), 1-5, 2005 | 21 | 2005 |
| Growth and Characterization of Single Crystals of the Ternary Compound TlGaTe2 AT Nagat, GA Gamal, SA Hussein Crystal Research and Technology 26 (1), 19-23, 1991 | 17 | 1991 |
| Effects of copper content and heat treatment on the electrical properties of Ge15Te85− xCux thin films M Dongol, M Abou Zied, GA Gamal, A El-Denglawey Applied surface science 161 (3-4), 365-374, 2000 | 15 | 2000 |
| Switching effect with memory in thallium sulfide single crystals AT Nagat, SA Hussein, YH Gameel, GA Gamal Crystal Research and Technology 25 (10), 1195-1202, 1990 | 15 | 1990 |
| Growth and Characterization of Ternary Compound TiGaTe2 Single Crystals AT Nagat, GA Gamal, SA Hussein physica status solidi (a) 120 (2), K163-K167, 1990 | 14 | 1990 |
| Growth and anisotropy of transport properties of detached Cd0. 78Zn0. 22Te crystals GA Gamal, M Abou Zied, AA Ebnalwaled Journal of alloys and compounds 431 (1-2), 32-36, 2007 | 13 | 2007 |
| Ferroelectric phase transition in Ga2Te3 single crystals GA Gamal, MM Abdalrahman, MI Ashraf, HJ Eman Journal of Physics and Chemistry of Solids 66 (1), 1-4, 2005 | 13 | 2005 |
| Temperature dependence of the optical energy gap and thermoelectric studies of crystals GA Gamal Semiconductor science and technology 13 (2), 185, 1998 | 13 | 1998 |
| Electronic transport properties of thallium sesquiselenide single crystals GA Gamal Crystal Research and Technology 28 (3), 395-399, 1993 | 12 | 1993 |
| Electronic properties of red p-type Tl2S5 single crystals GA Gamal, M Abou Zied, AA Ebnalwaled Chinese Physics Letters 22 (6), 1530, 2005 | 10 | 2005 |
| The conduction mechanism and thermoelectric phenomenon in layer crystals GA Gamal Semiconductor science and technology 12 (9), 1106, 1997 | 10 | 1997 |
| Preparation and thermoelectric effect of gallium sesquisulphide single crystals HA Elshaikh, GA Gamal Semiconductor science and technology 10 (7), 1034, 1995 | 10 | 1995 |
| Semiconducting Properties of TI2Te3 Single Crystals SA Hussein, MM Nassary, GA Gamal, AT Nagat Crystal Research and Technology 28 (7), 1021-1026, 1993 | 9 | 1993 |
| Investigation of Thermoelectric Power of Ga2Se3 Monocrystals GA Gamal, HA Elshaikh Crystal Research and Technology 30 (6), 867-872, 1995 | 8 | 1995 |
| Dielectric Properties, Debye′ s Relaxation Time and Activation Energy of [(Pb1− xSrx) 1− 1.5 zLaz] TiO3 Ceramics MK Gergs, GA Gamal, M Mostafa Egypt. J. Solids 31 (1), 121-36, 2008 | 7 | 2008 |
M M MahasenDoctor of Science ,Aswan UniversityVerified email at aswu.edu.eg
M M MahasenDoctor of Science ,Aswan UniversityVerified email at aswu.edu.eg