Chhandak Mukherjee
Chhandak Mukherjee
Chargé de Rechereche CNRS, IMS Laboratory, University of Bordeaux, France
Verified email at ims-bordeaux.fr - Homepage
Title
Cited by
Cited by
Year
Resistive switching in natural silk fibroin protein‐based bio‐memristors
C Mukherjee, MK Hota, D Naskar, SC Kundu, CK Maiti
physica status solidi (a) 210 (9), 1797-1805, 2013
432013
Strain-Engineered MOSFETs
CK Maiti, TK Maiti
CRC Press, 2012
372012
Reliability-aware circuit design methodology for beyond-5G communication systems
C Mukherjee, B Ardouin, JY Dupuy, V Nodjiadjim, M Riet, T Zimmer, ...
IEEE Transactions on Device and Materials Reliability 17 (3), 490-506, 2017
232017
Interface Properties of Atomic Layer Deposited TiO2/Al2O3 Films on In0.53Ga0.47As/InP Substrates
C Mukherjee, T Das, C Mahata, CK Maiti, CK Chia, SY Chiam, DZ Chi, ...
ACS applied materials & interfaces 6 (5), 3263-3274, 2014
222014
Hot-carrier degradation in SiGe HBTs: A physical and versatile aging compact model
C Mukherjee, T Jacquet, GG Fischer, T Zimmer, C Maneux
IEEE Transactions on Electron Devices 64 (12), 4861-4867, 2017
192017
An accurate physics-based compact model for dual-gate bilayer graphene FETs
JD Aguirre-Morales, S Fregonese, C Mukherjee, C Maneux, T Zimmer
IEEE Transactions on Electron Devices 62 (12), 4333-4339, 2015
192015
Versatile compact model for graphene FET targeting reliability-aware circuit design
C Mukherjee, JD Aguirre-Morales, S Fregonese, T Zimmer, C Maneux
IEEE Transactions on Electron Devices 62 (3), 757-763, 2015
192015
A large-signal monolayer graphene field-effect transistor compact model for RF-circuit applications
JD Aguirre-Morales, S Fregonese, C Mukherjee, W Wei, H Happy, ...
IEEE Transactions on Electron Devices 64 (10), 4302-4309, 2017
172017
Nanowires: Recent Advances
X Peng
BoD–Books on Demand, 2012
162012
Low-Frequency Noise in Advanced SiGe: C HBTs—Part I: Analysis
C Mukherjee, T Jacquet, A Chakravorty, T Zimmer, J Böck, K Aufinger, ...
IEEE Transactions on Electron Devices 63 (9), 3649-3656, 2016
122016
Nanocrystalline CopperNickelZinc Ferrite: efficient sensing materials for ethanol and acetone at room temperature
C Mukherjee, R Mondal, S Dey, S Kumar, J Das
IEEE Sensors Journal 17 (9), 2662-2669, 2017
112017
Bipolar Resistive Switching in Al/HfO2/In0. 53Ga0. 47As MIS Structures
MK Hota, C Mukherjee, T Das, CK Maiti
ECS Journal of Solid State Science and Technology 1 (6), N149, 2012
112012
Scalable compact modeling of III–V DHBTs: Prospective figures of merit toward terahertz operation
C Mukherjee, C Raya, B Ardouin, M Deng, S Fregonese, T Zimmer, ...
IEEE Transactions on Electron Devices 65 (12), 5357-5364, 2018
82018
Low-frequency noise in advanced SiGe: C HBTs—Part II: Correlation and modeling
C Mukherjee, T Jacquet, A Chakravorty, T Zimmer, J Böck, K Aufinger, ...
IEEE Transactions on Electron Devices 63 (9), 3657-3662, 2016
72016
Scalable Modeling of Thermal Impedance in InP DHBTs Targeting Terahertz Applications
C Mukherjee, M Couret, V Nodjiadjim, M Riet, JY Dupuy, S Fregonese, ...
IEEE Transactions on Electron Devices 66 (5), 2125-2131, 2019
62019
1/f Noise in 3D vertical gate-all-around junction-less silicon nanowire transistors
C Mukherjee, C Maneux, J Pezard, G Larrieu
2017 47th European Solid-State Device Research Conference (ESSDERC), 34-37, 2017
62017
Silicon Nanowire FinFETs
C Mukherjee, CK Maiti
Nanowires: Recent Advances, 151, 2012
62012
A physical and versatile aging compact model for hot carrier degradation in SiGe HBTs under dynamic operating conditions
C Mukherjee, F Marc, M Couret, GG Fischer, M Jaoul, D Céli, K Aufinger, ...
Solid-State Electronics 163, 107635, 2020
52020
A multiscale TCAD approach for the simulation of InP DHBTs and the extraction of their transit times
X Wen, C Mukherjee, C Raya, B Ardouin, M Deng, S Frégonèse, ...
IEEE Transactions on Electron Devices 66 (12), 5084-5090, 2019
52019
Random telegraph noise in SiGe HBTs: reliability analysis close to SOA limit
C Mukherjee, T Jacquet, A Chakravorty, T Zimmer, J Boeck, K Aufinger, ...
Microelectronics Reliability 73, 146-152, 2017
52017
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