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Dr. Bhavya Kumar
Dr. Bhavya Kumar
Delhi Technological University
Verified email at dtu.ac.in
Title
Cited by
Cited by
Year
Analog and RF performance evaluation of junctionless accumulation mode (JAM) gate stack gate all around (GS-GAA) FinFET
B Kumar, R Chaujar
Silicon 13, 919-927, 2021
472021
TCAD temperature analysis of gate stack gate all around (GS-GAA) FinFET for improved RF and wireless performance
B Kumar, R Chaujar
Silicon 13 (10), 3741-3753, 2021
342021
Numerical study of JAM-GS-GAA FinFET: a Fin aspect ratio optimization for upgraded analog and intermodulation distortion performance
B Kumar, R Chaujar
Silicon 14 (1), 309-321, 2022
202022
The effect of gate stack and high-ĸ spacer on device performance of a junctionless GAA FinFET
B Kumar, A Kumar, R Chaujar
2020 IEEE vlsi device circuit and system (vlsi dcs), 159-163, 2020
152020
Numerical simulation of analog metrics and parasitic capacitances of GaAs GS-GAA FinFET for ULSI switching applications
B Kumar, R Chaujar
The European Physical Journal Plus 137 (1), 110, 2022
92022
Fin aspect ratio optimization of novel junctionless gate stack gate all around (GS-GAA) FinFET for analog/RF applications
B Kumar, R Chaujar
Microelectronics, Circuits and Systems: Select Proceedings of 7th …, 2021
92021
Gate electrode work function engineered JAM-GS-GAA FinFET for analog/RF applications: Performance estimation and optimization
B Kumar, M Sharma, R Chaujar
Microelectronics Journal 135, 105766, 2023
52023
Polarization induced doping and high-k passivation engineering on T-gate MOS-HEMT for improved RF/microwave performance
M Sharma, B Kumar, R Chaujar
Materials Science and Engineering: B 290, 116298, 2023
42023
Junctionless-accumulation-mode stacked gate GAA FinFET with dual-k spacer for reliable RFIC design
B Kumar, M Sharma, R Chaujar
Microelectronics Journal 139, 105910, 2023
22023
Scattering parameter analysis of gate stack gate all around (GS-GAA) FinFET at THz for RF applications
B Kumar, M Sharma, R Chaujar
2022 8th International Conference on Signal Processing and Communication …, 2022
22022
Dual-k spacer JAM-GS-GAA FinFET: a device for low power analog applications
B Kumar, M Sharma, R Chaujar
2022 IEEE Silchar Subsection Conference (SILCON), 1-5, 2022
22022
Small signal and noise analysis of T-gate HEMT with polarization doped buffer for LNAs
M Sharma, B Kumar, R Chaujar
Micro and Nanostructures 180, 207593, 2023
12023
Linearity analysis of T-gate HEMT with graded back-barrier for wireless applications
M Sharma, B Kumar, R Chaujar
2022 IEEE International Conference on Electronics, Computing and …, 2022
12022
Simulation investigation of double-heterostructure T-gate HEMT with graded back-barrier engineering for improved RF performance
M Sharma, B Kumar, R Chaujar
Materials Today: Proceedings 71, 155-159, 2022
12022
Static Performance Assessment of Junctionless Accumulation Mode Gate Stack Gate All Around (JAM-GS-GAA) FinFET Under Severe Temperature
B Kumar, M Sharma, R Chaujar
2021 7th International Conference on Signal Processing and Communication …, 2021
12021
Effect of Gate Oxide Material Variability on The Analog Performance of T-Gate GaN-MOS-HEMT with Graded Buffer
M Sharma, B Kumar, R Chaujar
2021 7th International Conference on Signal Processing and Communication …, 2021
12021
Gate engineered GAA silicon-nanowire MOSFET for high switching performance
N Gupta, A Kumar, R Chaujar, B Kumar, MM Tripathi
2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), 258-262, 2020
12020
Fin field-effect-transistor engineered sensor for detection of MDA-MB-231 breast cancer cells: A switching-ratio-based sensitivity analysis
B Kumar, R Chaujar
Physical Review E 108 (3), 034408, 2023
2023
Small Signal Analysis of Stacked Gate GAA FinFET at THz Frequency for RF and Microwave Applications
B Kumar, R Chaujar
2022 IEEE International RF and Microwave Conference (RFM), 1-4, 2022
2022
Numerical Study of a Symmetric Underlap S/D High-ĸ Spacer on JAM-GAA FinFET for Low-Power Applications
B Kumar, R Chaujar
Emerging Low-Power Semiconductor Devices, 153-174, 2022
2022
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