| Comparative analysis of the quantum FinFET and trigate FinFET based on modeling and simulation NP Maity, R Maity, S Maity, S Baishya Journal of Computational Electronics 18, 492-499, 2019 | 65 | 2019 |
| A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices NP Maity, R Maity, RK Thapa, S Baishya Superlattices and Microstructures 95, 24-32, 2016 | 53 | 2016 |
| Voltage and oxide thickness dependent tunneling current density and tunnel resistivity model: application to high-k material HfO2 based MOS devices NP Maity, R Maity, S Baishya Superlattices and Microstructures 111, 628-641, 2017 | 46 | 2017 |
| Study of Interface Charge Densities for ZrO2 and HfO2 Based Metal-Oxide-Semiconductor Devices NP Maity, R Maity, RK Thapa, S Baishya Advances in Materials Science and Engineering 2014, 2014 | 42 | 2014 |
| Analysis of surface potential for dual-material-double-gate MOSFET based on modeling and simulation H Chakrabarti, R Maity, NP Maity Microsystem Technologies 25, 4675-4684, 2019 | 33 | 2019 |
| An analytical model for the surface potential and threshold voltage of a double-gate heterojunction tunnel FinFET NP Maity, R Maity, S Baishya Journal of computational electronics 18, 65-75, 2019 | 33 | 2019 |
| A new compact analytical model of nanoelectromechanical systems-based capacitive micromachined ultrasonic transducers for pulse echo imaging R Maity, NP Maity, K Srinivasa Rao, K Guha, S Baishya Journal of Computational Electronics 17, 1334-1342, 2018 | 30 | 2018 |
| Modeling, Simulation and Analysis of Surface Potential and Threshold Voltage: Application to High-K Material HfO2 Based FinFET S Panchanan, R Maity, S Baishya, NP Maity Silicon 13, 3271-3289, 2021 | 29 | 2021 |
| VLSI-based pipeline architecture for reversible image watermarking by difference expansion with high-level synthesis approach S Das, R Maity, NP Maity Circuits, Systems, and Signal processing 37, 1575-1593, 2018 | 29 | 2018 |
| A Tunneling Current Model with a Realistic Barrier for Ultra-Thin High-k Dielectric ZrO2 Material Based MOS Devices NP Maity, R Maity, S Baishya Silicon 10, 1645-1652, 2018 | 28 | 2018 |
| A surface potential model for tri-gate metal oxide semiconductor field effect transistor: analysis below 10 nm channel length S Panchanan, R Maity, S Baishya, NP Maity Engineering science and technology, an international journal 24 (4), 879-889, 2021 | 26 | 2021 |
| Image force effect on tunneling current for ultra thin high-K dielectric material Al2O3 based metal oxide semiconductor devices NP Maity, R Maity, RK Thapa, S Baishya Journal of Nanoelectronics and Optoelectronics 10 (5), 645-648, 2015 | 24 | 2015 |
| Improvement of quantum and power conversion efficiency through electron transport layer modification of ZnO/perovskite/PEDOT: PSS based organic heterojunction solar cell S Maity, B Das, R Maity, NP Maity, K Guha, KS Rao Solar Energy 185, 439-444, 2019 | 22 | 2019 |
| Circular membrane approximation model with the effect of the finiteness of the electrode’s diameter of MEMS capacitive micromachined ultrasonic transducers R Maity, NP Maity, S Baishya Microsystem Technologies 23, 3513-3524, 2017 | 20 | 2017 |
| Analysis of interface charge using capacitance-voltage method for ultra thin HfO2 gate dielectric based MOS devices NP Maity, RR Thakur, R Maity, RK Thapa, S Baishya Procedia Computer Science 57, 757-760, 2015 | 20 | 2015 |
| An accurate model for threshold voltage analysis of dual material double gate metal oxide semiconductor field effect transistor H Chakrabarti, R Maity, S Baishya, NP Maity Silicon 13, 1851-1861, 2021 | 19 | 2021 |
| An efficient model of nanoelectromechanical systems based ultrasonic sensor with fringing field effects R Maity, NP Maity, S Baishya IEEE Sensors Journal 20 (4), 1746-1753, 2019 | 19 | 2019 |
| Analysis of fringing capacitance effect on the performance of micro‐electromechanical‐system‐based micromachined ultrasonic air transducer R Maity, NP Maity, K Guha, S Baishya Micro & Nano Letters 13 (6), 872-877, 2018 | 18 | 2018 |
| Analysis of spring softening effect on the collapse voltage of capacitive MEMS ultrasonic transducers R Maity, NP Maity, K Guha, S Baishya Microsystem Technologies 27, 515-523, 2021 | 17 | 2021 |
| A new surface potential and drain current model of dual material gate short channel metal oxide semiconductor field effect transistor in sub-threshold regime: application to … NP Maity, R Maity, S Maity, S Baishya Journal of Nanoelectronics and Optoelectronics 14 (6), 868-876, 2019 | 17 | 2019 |
Srimanta BaishyaNIT SilcharVerified email at nits.ac.in
