Comparative analysis of the quantum FinFET and trigate FinFET based on modeling and simulation NP Maity, R Maity, S Maity, S Baishya Journal of Computational Electronics 18 (2), 492-499, 2019 | 47 | 2019 |

A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices NP Maity, R Maity, RK Thapa, S Baishya Superlattices and Microstructures 95, 24-32, 2016 | 45 | 2016 |

Voltage and oxide thickness dependent tunneling current density and tunnel resistivity model: application to high-k material HfO2 based MOS devices NP Maity, R Maity, S Baishya Superlattices and Microstructures 111, 628-641, 2017 | 39 | 2017 |

Study of interface charge densities for ZrO2 and HfO2 based metal-oxide-semiconductor devices NP Maity, R Maity, RK Thapa, S Baishya Advances in Materials Science and Engineering 2014, 2014 | 39 | 2014 |

Analysis of surface potential for dual-material-double-gate MOSFET based on modeling and simulation H Chakrabarti, R Maity, NP Maity Microsystem Technologies 25 (12), 4675-4684, 2019 | 27 | 2019 |

An analytical model for the surface potential and threshold voltage of a double-gate heterojunction tunnel FinFET NP Maity, R Maity, S Baishya Journal of computational electronics 18 (1), 65-75, 2019 | 27 | 2019 |

A tunneling current model with a realistic barrier for ultra-thin high-k dielectric ZrO2 material based MOS devices NP Maity, R Maity, S Baishya Silicon 10 (4), 1645-1652, 2018 | 26 | 2018 |

A new compact analytical model of nanoelectromechanical systems-based capacitive micromachined ultrasonic transducers for pulse echo imaging R Maity, NP Maity, K Srinivasa Rao, K Guha, S Baishya Journal of Computational Electronics 17 (3), 1334-1342, 2018 | 25 | 2018 |

VLSI-based pipeline architecture for reversible image watermarking by difference expansion with high-level synthesis approach S Das, R Maity, NP Maity Circuits, Systems, and Signal processing 37 (4), 1575-1593, 2018 | 25 | 2018 |

Image force effect on tunneling current for ultra thin high-K dielectric material Al2O3 based metal oxide semiconductor devices NP Maity, R Maity, RK Thapa, S Baishya Journal of Nanoelectronics and Optoelectronics 10 (5), 645-648, 2015 | 23 | 2015 |

Improvement of quantum and power conversion efficiency through electron transport layer modification of ZnO/perovskite/PEDOT: PSS based organic heterojunction solar cell S Maity, B Das, R Maity, NP Maity, K Guha, KS Rao Solar Energy 185, 439-444, 2019 | 19 | 2019 |

Analysis of interface charge using capacitance-voltage method for ultra thin HfO2 gate dielectric based MOS devices NP Maity, RR Thakur, R Maity, RK Thapa, S Baishya Procedia Computer Science 57, 757-760, 2015 | 19 | 2015 |

A surface potential model for tri-gate metal oxide semiconductor field effect transistor: analysis below 10 nm channel length S Panchanan, R Maity, S Baishya, NP Maity Engineering science and technology, an international journal 24 (4), 879-889, 2021 | 18 | 2021 |

Circular membrane approximation model with the effect of the finiteness of the electrode’s diameter of MEMS capacitive micromachined ultrasonic transducers R Maity, NP Maity, S Baishya Microsystem Technologies 23 (8), 3513-3524, 2017 | 17 | 2017 |

Modeling, simulation and analysis of surface potential and threshold voltage: application to high-K material HfO2 based FinFET S Panchanan, R Maity, S Baishya, NP Maity Silicon 13 (10), 3271-3289, 2021 | 16 | 2021 |

An accurate model for threshold voltage analysis of dual material double gate metal oxide semiconductor field effect transistor H Chakrabarti, R Maity, S Baishya, NP Maity Silicon 13 (6), 1851-1861, 2021 | 14 | 2021 |

A new surface potential and drain current model of dual material gate short channel metal oxide semiconductor field effect transistor in sub-threshold regime: application to … NP Maity, R Maity, S Maity, S Baishya Journal of Nanoelectronics and Optoelectronics 14 (6), 868-876, 2019 | 14 | 2019 |

Effect of image force on tunneling current for ultra thin oxide layer based metal oxide semiconductor devices NP Maity, R Maity, RK Thapa, S Baishya Nanoscience and Nanotechnology Letters 7 (4), 331-333, 2015 | 14 | 2015 |

Analysis of spring softening effect on the collapse voltage of capacitive MEMS ultrasonic transducers R Maity, NP Maity, K Guha, S Baishya Microsystem Technologies 27 (2), 515-523, 2021 | 13 | 2021 |

An improved analytical and finite element method model of nanoelectromechanical system based micromachined ultrasonic transducers R Maity, NP Maity, RK Thapa, S Baishya Microsystem Technologies 23 (6), 2163-2173, 2017 | 12 | 2017 |