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Prof. Niladri Pratap Maity
Prof. Niladri Pratap Maity
Verified email at mzu.edu.in - Homepage
Title
Cited by
Cited by
Year
Comparative analysis of the quantum FinFET and trigate FinFET based on modeling and simulation
NP Maity, R Maity, S Maity, S Baishya
Journal of Computational Electronics 18 (2), 492-499, 2019
472019
A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices
NP Maity, R Maity, RK Thapa, S Baishya
Superlattices and Microstructures 95, 24-32, 2016
452016
Voltage and oxide thickness dependent tunneling current density and tunnel resistivity model: application to high-k material HfO2 based MOS devices
NP Maity, R Maity, S Baishya
Superlattices and Microstructures 111, 628-641, 2017
392017
Study of interface charge densities for ZrO2 and HfO2 based metal-oxide-semiconductor devices
NP Maity, R Maity, RK Thapa, S Baishya
Advances in Materials Science and Engineering 2014, 2014
392014
Analysis of surface potential for dual-material-double-gate MOSFET based on modeling and simulation
H Chakrabarti, R Maity, NP Maity
Microsystem Technologies 25 (12), 4675-4684, 2019
272019
An analytical model for the surface potential and threshold voltage of a double-gate heterojunction tunnel FinFET
NP Maity, R Maity, S Baishya
Journal of computational electronics 18 (1), 65-75, 2019
272019
A tunneling current model with a realistic barrier for ultra-thin high-k dielectric ZrO2 material based MOS devices
NP Maity, R Maity, S Baishya
Silicon 10 (4), 1645-1652, 2018
262018
A new compact analytical model of nanoelectromechanical systems-based capacitive micromachined ultrasonic transducers for pulse echo imaging
R Maity, NP Maity, K Srinivasa Rao, K Guha, S Baishya
Journal of Computational Electronics 17 (3), 1334-1342, 2018
252018
VLSI-based pipeline architecture for reversible image watermarking by difference expansion with high-level synthesis approach
S Das, R Maity, NP Maity
Circuits, Systems, and Signal processing 37 (4), 1575-1593, 2018
252018
Image force effect on tunneling current for ultra thin high-K dielectric material Al2O3 based metal oxide semiconductor devices
NP Maity, R Maity, RK Thapa, S Baishya
Journal of Nanoelectronics and Optoelectronics 10 (5), 645-648, 2015
232015
Improvement of quantum and power conversion efficiency through electron transport layer modification of ZnO/perovskite/PEDOT: PSS based organic heterojunction solar cell
S Maity, B Das, R Maity, NP Maity, K Guha, KS Rao
Solar Energy 185, 439-444, 2019
192019
Analysis of interface charge using capacitance-voltage method for ultra thin HfO2 gate dielectric based MOS devices
NP Maity, RR Thakur, R Maity, RK Thapa, S Baishya
Procedia Computer Science 57, 757-760, 2015
192015
A surface potential model for tri-gate metal oxide semiconductor field effect transistor: analysis below 10 nm channel length
S Panchanan, R Maity, S Baishya, NP Maity
Engineering science and technology, an international journal 24 (4), 879-889, 2021
182021
Circular membrane approximation model with the effect of the finiteness of the electrode’s diameter of MEMS capacitive micromachined ultrasonic transducers
R Maity, NP Maity, S Baishya
Microsystem Technologies 23 (8), 3513-3524, 2017
172017
Modeling, simulation and analysis of surface potential and threshold voltage: application to high-K material HfO2 based FinFET
S Panchanan, R Maity, S Baishya, NP Maity
Silicon 13 (10), 3271-3289, 2021
162021
An accurate model for threshold voltage analysis of dual material double gate metal oxide semiconductor field effect transistor
H Chakrabarti, R Maity, S Baishya, NP Maity
Silicon 13 (6), 1851-1861, 2021
142021
A new surface potential and drain current model of dual material gate short channel metal oxide semiconductor field effect transistor in sub-threshold regime: application to …
NP Maity, R Maity, S Maity, S Baishya
Journal of Nanoelectronics and Optoelectronics 14 (6), 868-876, 2019
142019
Effect of image force on tunneling current for ultra thin oxide layer based metal oxide semiconductor devices
NP Maity, R Maity, RK Thapa, S Baishya
Nanoscience and Nanotechnology Letters 7 (4), 331-333, 2015
142015
Analysis of spring softening effect on the collapse voltage of capacitive MEMS ultrasonic transducers
R Maity, NP Maity, K Guha, S Baishya
Microsystem Technologies 27 (2), 515-523, 2021
132021
An improved analytical and finite element method model of nanoelectromechanical system based micromachined ultrasonic transducers
R Maity, NP Maity, RK Thapa, S Baishya
Microsystem Technologies 23 (6), 2163-2173, 2017
122017
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