| High-mobility and low-power thin-film transistors based on multilayer MoS 2 crystals S Kim, A Konar, WS Hwang, JH Lee, J Lee, J Yang, C Jung, H Kim, ... Nature communications 3 (1), 1-7, 2012 | 1296 | 2012 |
| Broadband graphene terahertz modulators enabled by intraband transitions B Sensale-Rodriguez, R Yan, MM Kelly, T Fang, K Tahy, WS Hwang, ... Nature communications 3 (1), 1-7, 2012 | 817 | 2012 |
| High‐detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared W Choi, MY Cho, A Konar, JH Lee, GB Cha, SC Hong, S Kim, J Kim, ... Advanced materials 24 (43), 5832-5836, 2012 | 798 | 2012 |
| Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors W Liu, J Kang, D Sarkar, Y Khatami, D Jena, K Banerjee Nano letters 13 (5), 1983-1990, 2013 | 739 | 2013 |
| Carrier statistics and quantum capacitance of graphene sheets and ribbons T Fang, A Konar, H Xing, D Jena Applied Physics Letters 91 (9), 092109, 2007 | 642 | 2007 |
| Exciton Dynamics in Suspended Monolayer and Few-Layer MoS2 2D Crystals H Shi, R Yan, S Bertolazzi, J Brivio, B Gao, A Kis, D Jena, HG Xing, ... ACS nano 7 (2), 1072-1080, 2013 | 601 | 2013 |
| Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors J Kang, W Liu, D Sarkar, D Jena, K Banerjee Physical Review X 4 (3), 031005, 2014 | 518 | 2014 |
| Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures J Simon, V Protasenko, C Lian, H Xing, D Jena Science 327 (5961), 60-64, 2010 | 515 | 2010 |
| Two-dimensional semiconductors for transistors M Chhowalla, D Jena, H Zhang Nature Reviews Materials 1 (11), 1-15, 2016 | 492 | 2016 |
| High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems HY Chang, S Yang, J Lee, L Tao, WS Hwang, D Jena, N Lu, D Akinwande ACS nano 7 (6), 5446-5452, 2013 | 427 | 2013 |
| Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering D Jena, A Konar Physical review letters 98 (13), 136805, 2007 | 397 | 2007 |
| InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHz Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ... IEEE Electron Device Letters 33 (7), 988-990, 2012 | 325 | 2012 |
| Dislocation scattering in a two-dimensional electron gas D Jena, A Gossard, U Mishra Applied Physics Letters 76, 1707-1709, 2000 | 290* | 2000 |
| Dislocation scattering in a two-dimensional electron gas D Jena, A Gossard, U Mishra Applied Physics Letters 76, 1707, 2000 | 290* | 2000 |
| Dislocation scattering in a two-dimensional electron gas UKM D. Jena, A. C. Gossard Applied Physics Letters 76, 1707, 2000 | 290* | 2000 |
| Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018 | 288 | 2018 |
| High-mobility window for two-dimensional electron gases at ultrathin heterojunctions Y Cao, D Jena Applied physics letters 90 (18), 182112, 2007 | 287 | 2007 |
| Charge scattering and mobility in atomically thin semiconductors N Ma, D Jena Physical Review X 4 (1), 011043, 2014 | 285 | 2014 |
| Effect of high-κ gate dielectrics on charge transport in graphene-based field effect transistors A Konar, T Fang, D Jena Physical Review B 82 (11), 115452, 2010 | 282 | 2010 |
| Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering T Fang, A Konar, H Xing, D Jena Physical Review B 78 (20), 205403, 2008 | 281 | 2008 |
