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Ashraful Ghani Bhuiyan
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Indium nitride (InN): A review on growth, characterization, and properties
AG Bhuiyan, A Hashimoto, A Yamamoto
Journal of applied physics 94 (5), 2779-2808, 2003
10812003
InGaN solar cells: present state of the art and important challenges
AG Bhuiyan, K Sugita, A Hashimoto, A Yamamoto
IEEE Journal of photovoltaics 2 (3), 276-293, 2012
2622012
Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy
AG Bhuiyan, K Sugita, K Kasashima, A Hashimoto, A Yamamoto, ...
Applied physics letters 83 (23), 4788-4790, 2003
1262003
Anomalous temperature dependent thermal conductivity of two-dimensional silicon carbide
ASMJ Islam, MS Islam, N Ferdous, J Park, AG Bhuiyan, A Hashimoto
Nanotechnology 30 (44), 445707, 2019
552019
Anisotropic mechanical behavior of two dimensional silicon carbide: effect of temperature and vacancy defects
ASMJ Islam, MS Islam, N Ferdous, J Park, AG Bhuiyan, A Hashimoto
Materials Research Express 6 (12), 125073, 2019
352019
Two dimensional electron gas in InN-based heterostructures: Effects of spontaneous and piezoelectric polarization
MT Hasan, AG Bhuiyan, A Yamamoto
Solid-State Electronics 52 (1), 134-139, 2008
332008
Metal-organic vapor-phase epitaxial growth of InGaN and InAlN for multi-junction tandem solar cells
A Yamamoto, K Sugita, AG Bhuiyan, A Hashimoto, N Narita
Materials for Renewable and Sustainable Energy 2, 1-9, 2013
292013
High temperature growth of InN on GaP (1 1 1) B substrate using a new two-step growth method
AG Bhuiyan, A Yamamoto, A Hashimoto, Y Ito
Journal of crystal growth 236 (1-3), 59-65, 2002
292002
MOVPE growth of high quality p-type InGaN with intermediate In compositions
K Sasamoto, T Hotta, K Sugita, AG Bhuiyan, A Hashimoto, A Yamamoto, ...
Journal of crystal growth 318 (1), 492-495, 2011
262011
Refractive index, absorption coefficient, and photoelastic constant: key parameters of InGaAs material relevant to InGaAs-based device performance
MS Alam, MS Rahman, MR Islam, AG Bhuiyan, M Yamada
2007 IEEE 19th International Conference on Indium Phosphide & Related …, 2007
262007
Laser‐Assisted Metalorganic Vapor‐Phase Epitaxy (LMOVPE) of Indium Nitride (InN)
AG Bhuiyan, T Tanaka, A Yamamoto, A Hashimoto
physica status solidi (a) 194 (2), 502-505, 2002
242002
Tunable electronic properties in bismuthene/2D silicon carbide van der Waals heterobilayer
JD Sarker, MS Islam, N Ferdous, PP Sarker, AG Bhuiyan, T Makino, ...
Japanese Journal of Applied Physics 59 (SC), SCCC03, 2019
192019
Growth and characterization of epitaxial InN films on sapphire substrate using an ArF excimer laser-assisted metalorganic vapor-phase epitaxy (LA-MOVPE)
AG Bhuiyan, T Tanaka, K Kasashima, A Hashimoto, A Yamamoto
Japanese journal of applied physics 42 (12R), 7284, 2003
192003
MOVPE growth of InGaN on Si (111) substrates with an intermediate range of In content
AG Bhuiyan, A Mihara, T Esaki, K Sugita, A Hashimoto, A Yamamoto, ...
physica status solidi c 9 (3‐4), 670-672, 2012
182012
Design and performance of inxga1-xn-based mj solar cells
MR Islam, MT Hasan, AG Bhuiyan, MR Islam, A Yamamoto
IETECH Journal of Electrical Analysis 2 (4), 237-243, 2008
142008
Proposal of high performance 1.55 µm quantum dot heterostructure laser using InN
MM Hossain, M Abdullah-Al Humayun, MT Hasan, AG Bhuiyan, ...
IEICE transactions on electronics 95 (2), 255-261, 2012
132012
Interlayer vacancy effects on the phonon modes in AB stacked bilayer graphene nanoribbon
KN Anindya, MS Islam, J Park, AG Bhuiyan, A Hashimoto
Current Applied Physics 20 (4), 572-581, 2020
122020
Growth mechanism of InN nucleation layers on epitaxial graphene using metal organic vapor phase epitaxy and radio-frequency molecular beam epitaxy
AG Bhuiyan, D Ishimaru, A Hashimoto
Crystal Growth & Design 20 (3), 1415-1421, 2020
122020
MOVPE growth of InAlN/InGaN heterostructures with an intermediate range of In content
K Sugita, M Tanaka, K Sasamoto, AG Bhuiyan, A Hashimoto, ...
Journal of crystal growth 318 (1), 505-508, 2011
112011
2DEG properties in InGaN/InN/InGaN‐based double channel HEMTs
MT Hasan, MR Kaysir, MS Islam, AG Bhuiyan, MR Islam, A Hashimoto, ...
physica status solidi c 7 (7‐8), 1997-2000, 2010
112010
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