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Ashraful Ghani Bhuiyan
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Indium nitride (InN): A review on growth, characterization, and properties
AG Bhuiyan, A Hashimoto, A Yamamoto
Journal of applied physics 94 (5), 2779-2808, 2003
10382003
InGaN solar cells: present state of the art and important challenges
AG Bhuiyan, K Sugita, A Hashimoto, A Yamamoto
IEEE Journal of photovoltaics 2 (3), 276-293, 2012
2242012
Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy
AG Bhuiyan, K Sugita, K Kasashima, A Hashimoto, A Yamamoto, ...
Applied physics letters 83 (23), 4788-4790, 2003
1232003
Anomalous temperature dependent thermal conductivity of two-dimensional silicon carbide
ASMJ Islam, MS Islam, N Ferdous, J Park, AG Bhuiyan, A Hashimoto
Nanotechnology 30 (44), 445707, 2019
352019
Metal-organic vapor-phase epitaxial growth of InGaN and InAlN for multi-junction tandem solar cells
A Yamamoto, K Sugita, AG Bhuiyan, A Hashimoto, N Narita
Materials for Renewable and Sustainable Energy 2 (2), 1-9, 2013
292013
Two dimensional electron gas in InN-based heterostructures: Effects of spontaneous and piezoelectric polarization
MT Hasan, AG Bhuiyan, A Yamamoto
Solid-State Electronics 52 (1), 134-139, 2008
292008
High temperature growth of InN on GaP (1 1 1) B substrate using a new two-step growth method
AG Bhuiyan, A Yamamoto, A Hashimoto, Y Ito
Journal of crystal growth 236 (1-3), 59-65, 2002
272002
Anisotropic mechanical behavior of two dimensional silicon carbide: effect of temperature and vacancy defects
ASMJ Islam, MS Islam, N Ferdous, J Park, AG Bhuiyan, A Hashimoto
Materials Research Express 6 (12), 125073, 2019
232019
MOVPE growth of high quality p-type InGaN with intermediate In compositions
K Sasamoto, T Hotta, K Sugita, AG Bhuiyan, A Hashimoto, A Yamamoto, ...
Journal of crystal growth 318 (1), 492-495, 2011
232011
Laser‐Assisted Metalorganic Vapor‐Phase Epitaxy (LMOVPE) of Indium Nitride (InN)
AG Bhuiyan, T Tanaka, A Yamamoto, A Hashimoto
physica status solidi (a) 194 (2), 502-505, 2002
222002
Refractive index, absorption coefficient, and photoelastic constant: Key parameters of InGaAs material relevant to InGaAs-based device performance
MS Alam, MS Rahman, MR Islam, AG Bhuiyan, M Yamada
2007 IEEE 19th International Conference on Indium Phosphide & Related …, 2007
212007
MOVPE growth of InGaN on Si (111) substrates with an intermediate range of In content
AG Bhuiyan, A Mihara, T Esaki, K Sugita, A Hashimoto, A Yamamoto, ...
physica status solidi c 9 (3‐4), 670-672, 2012
172012
Tunable electronic properties in bismuthene/2D silicon carbide van der Waals heterobilayer
JD Sarker, MS Islam, N Ferdous, PP Sarker, AG Bhuiyan, T Makino, ...
Japanese Journal of Applied Physics 59 (SC), SCCC03, 2019
162019
Design and performance of inxga1-xn-based mj solar cells
MR Islam, MT Hasan, AG Bhuiyan, MR Islam, A Yamamoto
IETECH Journal of Electrical Analysis 2 (4), 237-243, 2008
142008
Proposal of high performance 1.55 µm quantum dot heterostructure laser using InN
MM Hossain, M Abdullah-Al Humayun, MT Hasan, AG Bhuiyan, ...
IEICE transactions on electronics 95 (2), 255-261, 2012
112012
MOVPE growth of InAlN/InGaN heterostructures with an intermediate range of In content
K Sugita, M Tanaka, K Sasamoto, AG Bhuiyan, A Hashimoto, ...
Journal of crystal growth 318 (1), 505-508, 2011
112011
2DEG properties in InGaN/InN/InGaN‐based double channel HEMTs
MT Hasan, MR Kaysir, MS Islam, AG Bhuiyan, MR Islam, A Hashimoto, ...
physica status solidi c 7 (7‐8), 1997-2000, 2010
112010
DC characteristics of dual gated large area graphene MOSFET
MT Rahman, AK Roy, HMAR Bhuiyan, MT Islam, AG Bhuiyan
2013 International Conference on Electrical Information and Communication …, 2014
92014
Design and performance of 1.55 μm laser using InGaN
MT Hasan, MJ Islam, R Hasan, MS Islam, S Yeasmin, AG Bhuiyan, ...
physica status solidi c 7 (7‐8), 1825-1828, 2010
92010
Nitridation effects of GaP (1 1 1) B substrate on MOCVD growth of InN
AG Bhuiyan, A Hashimoto, A Yamamoto, R Ishigami
Journal of crystal growth 212 (3-4), 379-384, 2000
92000
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