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Loganathan Ravi
Loganathan Ravi
University of Warwick, United Kingdom
Verified email at warwick.ac.uk - Homepage
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Cited by
Year
Growth of gallium nitride nanowires on sapphire and silicon by chemical vapor deposition for water splitting applications
L Ravi, K Boopathi, P Panigrahi, B Krishnan
Applied Surface Science 449, 213-220, 2018
312018
Structural and optical characterization of AlGaN/GaN layers
M Jayasakthi, R Ramesh, P Arivazhagan, R Loganathan, K Prabakaran, ...
Journal of crystal growth 401, 527-531, 2014
262014
Influence of initial growth stages on AlN epilayers grown by metal organic chemical vapor deposition
M Balaji, R Ramesh, P Arivazhagan, M Jayasakthi, R Loganathan, ...
Journal of crystal growth 414, 69-75, 2015
222015
Studies on dislocation and surface morphology of AlxGa1− xN/GaN heterostructures grown by MOCVD
R Loganathan, M Jayasakthi, K Prabakaran, R Ramesh, P Arivazhagan, ...
Journal of alloys and compounds 616, 363-371, 2014
222014
Large area ultraviolet photodetector on surface modified Si: GaN layers
R Anitha, R Ramesh, R Loganathan, DS Vavilapalli, K Baskar, S Singh
Applied Surface Science 435, 1057-1064, 2018
212018
Effect of growth temperature on InGaN/GaN heterostructures grown by MOCVD
S Surender, K Prabakaran, R Loganathan, S Pradeep, S Singh, K Baskar
Journal of Crystal Growth 468, 249-251, 2017
162017
The effect of growth temperature on structural quality of AlInGaN/AlN/GaN heterostructures grown by MOCVD
R Loganathan, M Balaji, K Prabakaran, R Ramesh, M Jayasakthi, ...
Journal of Materials Science: Materials in Electronics 26, 5373-5380, 2015
92015
Controlled nucleation and growth of nanostructures by employing surface modified GaN based layers/heterostructures as bottom layer
R Ramesh, R Loganathan, SS Menon, K Baskar, S Singh
RSC Advances 4 (14), 7112-7119, 2014
92014
Effect of gamma irradiation on AlInGaN/AlN/GaN heterostructures grown by MOCVD
S Pradeep, R Loganathan, S Surender, K Prabakaran, K Asokan, ...
Superlattices and Microstructures 120, 40-47, 2018
72018
Epitaxial growth of AlN microwalls on wet etched GaN template by MOCVD
L Ravi, B Krishnan
Superlattices and Microstructures 123, 144-153, 2018
62018
Influence of TMIn flow rate on structural and optical quality of AlInGaN/GaN epilayers grown by MOCVD
R Loganathan, K Prabakaran, S Pradeep, S Surender, S Singh, K Baskar
Journal of Alloys and Compounds 656, 640-646, 2016
62016
Cu catalyst assisted growth of GaN nanowires on sapphire substrate for p-type behavior
B Kuppulingam, R Loganathan, K Prabakaran, K Baskar
Optik 127 (8), 3762-3765, 2016
52016
Epitaxial Growth of GaN/AlN on h-BN/Si(111) by Metal–Organic Chemical Vapor Deposition: An Interface Analysis
L Ravi, MA Rather, KL Lin, CT Wu, TY Yu, KY Lai, JI Chyi
ACS Applied Electronic Materials 5 (1), 146-154, 2023
42023
Fabrication of InGaN/Si (111) nanowire heterostructure photoanode for hydrogen generation under visible light
L Ravi, P Chauhan, K Boopathi
Applied Physics Letters 119 (15), 2021
42021
Structural and carrier dynamics of GaN and AlGaN-based double heterostructures in the UV region
P Arivazhagan, R Ramesh, M Jayasakthi, R Loganathan, M Balaji, ...
Journal of electronic materials 42, 2486-2491, 2013
42013
Crystal Transformation of Cubic BN Nanoislands to Rhombohedral BN Sheets on AlN for Deep-UV Light-Emitting Diodes
CP Huang, MA Rather, CT Wu, R Loganathan, YH Ju, KL Lin, JI Chyi, ...
ACS Applied Nano Materials 3 (6), 5285-5290, 2020
32020
Synthesis of GaN fibers by varying precursor concentrations using Electrospinning method
GSM P. Muzammil, S. Munawar Basha, R. Loganathan
Optik, 2019
22019
Growth and characterization of InXGa1-XN/GaN single quantum well prepared by MOCVD
K Prabakaran, R Ramesh, M Jayasakthi, R Loganathan, P Arivazhagan, ...
AIP Conference Proceedings 1665 (1), 2015
22015
Effect of Al-mole fraction in grown by MOCVD
M Jayasakthi, R Ramesh, K Prabakaran, R Loganathan, B Kuppulingam, ...
AIP Conference Proceedings 1591 (1), 1458-1460, 2014
22014
Effect of TMAl flow rate on AlInGaN/GaN heterostructures grown by MOCVD
L Ravi, B Krishnan
Optik 178, 66-73, 2019
12019
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