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Muhammad Atif Khan
Muhammad Atif Khan
Verified email at skku.edu - Homepage
Title
Cited by
Cited by
Year
Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates
C Lee, S Rathi, MA Khan, D Lim, Y Kim, SJ Yun, DH Youn, K Watanabe, ...
Nanotechnology 29 (33), 335202, 2018
872018
Electrical characterization of multilayer HfSe2 field-effect transistors on SiO2 substrate
GHK Moonshik Kang, Servin Rathi, Inyeal Lee, Dongsuk Lim, Jianwei Wang ...
Applied Physics Letter 106 (14), 2015
702015
Non-degenerate n-type doping by hydrazine treatment in metal work function engineered WSe2 field-effect transistor
I Lee, S Rathi, L Li, D Lim, MA Khan, ES Kannan, GH Kim
Nanotechnology 26 (45), 455203, 2015
472015
Tunable electrical properties of multilayer HfSe 2 field effect transistors by oxygen plasma treatment
M Kang, S Rathi, I Lee, L Li, MA Khan, D Lim, Y Lee, J Park, SJ Yun, ...
Nanoscale 9 (4), 1645-1652, 2017
432017
Gate Tunable Self-Biased Diode Based on Few Layered MoS2 and WSe2
MA Khan, S Rathi, D Lim, SJ Yun, DH Youn, K Watanabe, T Taniguchi, ...
Chemistry of Materials 30 (3), 1011-1016, 2018
222018
Tunable electron and hole injection enabled by atomically thin tunneling layer for improved contact resistance and dual channel transport in MoS2/WSe2 van der Waals heterostructure
MA Khan, S Rathi, C Lee, D Lim, Y Kim, SJ Yun, DH Youn, GH Kim
ACS applied materials & interfaces 10 (28), 23961-23967, 2018
182018
Garage-fabricated, ultrasensitive capacitive humidity sensor based on tissue paper
A Ullah, MH Zulfiqar, MA Khan, M Ali, M Zubair, MQ Mehmood, ...
Sensors 22 (20), 7885, 2022
172022
Low-cost microwave sensor for characterization and adulteration detection in edible oil
MH Bhatti, MA Jabbar, MA Khan, Y Massoud
Applied Sciences 12 (17), 8665, 2022
152022
Photodetector based on multilayer SnSe2 field effect transistor
M Kang, S Rathi, I Lee, L Li, MA Khan, D Lim, Y Lee, J Park, AT Pham, ...
Journal of Nanoscience and Nanotechnology 18 (6), 4243-4247, 2018
152018
Facile pressure-sensitive capacitive touch keypad for a green intelligent human–machine interface
MS Malik, MH Zulfiqar, MA Khan, MQ Mehmood, Y Massoud
Sensors 22 (21), 8113, 2022
142022
High performance MoS2-based field-effect transistor enabled by hydrazine doping
D Lim, ES Kannan, I Lee, S Rathi, L Li, Y Lee, MA Khan, M Kang, J Park, ...
Nanotechnology 27 (22), 225201, 2016
142016
Reduction of persistent photoconductivity in a few-layer MoS 2 field-effect transistor by graphene oxide functionalization
N Rathi, S Rathi, I Lee, J Wang, M Kang, D Lim, MA Khan, Y Lee, GH Kim
RSC advances 6 (28), 23961-23967, 2016
142016
Fast response facile fabricated ide-based ultra-sensitive humidity sensor for medical applications
A Ullah, MH Zulfiqar, MA Khan, M Zubair, MQ Mehmood, Y Massoud
ACS omega 8 (19), 16842-16850, 2023
112023
Emerging two-dimensional materials-based electrochemical sensors for human health and environment applications
MA Khan, F Ramzan, M Ali, M Zubair, MQ Mehmood, Y Massoud
Nanomaterials 13 (4), 780, 2023
102023
High-performance ambipolar MoS2 transistor enabled by indium edge contacts
HY Le Thi, MA Khan, A Venkatesan, K Watanabe, T Taniguchi, GH Kim
Nanotechnology 32 (21), 215701, 2021
102021
Zero-writing-power tribotronic MoS2 touch memory
U Khan, TH Kim, MA Khan, J Kim, C Falconi, SW Kim
Nano Energy 75, 104936, 2020
102020
High performance self-gating graphene/MoS2 diode enabled by asymmetric contacts
MA Khan, S Rathi, C Lee, Y Kim, H Kim, D Whang, SJ Yun, DH Youn, ...
Nanotechnology 29 (39), 395201, 2018
102018
Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single-Layer MoS2 Device
MA Khan, S Rathi, J Park, D Lim, Y Lee, SJ Yun, DH Youn, GH Kim
ACS Applied Materials & Interfaces 9 (32), 26983-26989, 2017
102017
High-Temperature Annealing Effects on Atomically Thin Tungsten Diselenide Field-Effect Transistor
MA Khan, MQ Mehmood, Y Massoud
Applied Sciences 12 (16), 8119, 2022
72022
P-doping and efficient carrier injection induced by graphene oxide for high performing WSe2 rectification devices
MA Khan, S Rathi, I Lee, L Li, D Lim, M Kang, GH Kim
Applied Physics Letters 108 (9), 2016
72016
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