| Low voltage & controlled switching of MoS2-GO resistive layers based ReRAM for non-volatile memory applications S Choudhary, M Soni, SK Sharma Semiconductor Science and Technology 34 (8), 085009, 2019 | 16 | 2019 |
| Gate all around FET: an alternative of FinFET for future technology nodes C Mohan, S Choudhary, B Prasad Int. J. Adv. Res. Sci. Eng. 6 (7), 563-569, 2017 | 7 | 2017 |
| Impact of Charge Trapping On Epitaxial p-Ge-on-p-Si and HfO2 Based Al/HfO2/p-Ge-on-p-Si/Al Structures Using Kelvin Probe Force Microscopy and Constant … S Choudhary, D Schwarz, HS Funk, R Khosla, SK Sharma, J Schulze IEEE Transactions on Nanotechnology 20, 346-355, 2021 | 2 | 2021 |
| A Steep Slope MBE-Grown Thin p-Ge Channel FETs on Bulk Ge-on-Si Using HZO Internal Voltage Amplification S Choudhary, D Schwarz, HS Funk, D Weißhaupt, R Khosla, SK Sharma, ... IEEE Transactions on Electron Devices 69 (5), 2725-2731, 2022 | | 2022 |
| Impact of Charge Trapping On Epitaxial p-Ge-on-p-Si and HfO2 Based Al/HfO2/p-Ge-on-p-Si/Al Structures Using Kelvin Probe Force Microscopy and Constant Voltage Stress I Sumit Choudhary , Member, IEEE, Daniel Schwarz, Hannes S. Funk, Robin ... IEEE TRANSACTIONS ON NANOTECHNOLOGY 20 (1536-125X), 346-355, 2021 | | 2021 |
| Development of metal-organic cluster based negative tone resist: pre-screened through the helium-ion beam prelude to extreme ultraviolet lithography (EUVL) applications SK Sharma, M Chauhan, R Kumar, K Palit, S Choudhary, KE Gonsalves Advances in Patterning Materials and Processes XXXVIII 11612, 21-28, 2021 | | 2021 |
| Simulation of radiation hardened SOI structure for mitigation of single event upset R Kumar, S Choudhary, B Prasad Advanced Research in Electrical and Electronic Engineering, 2014 | | 2014 |
| Simulation of 6T SRAM at 90nm and 180nm Technology and Study the Effect of Scaling on Read and Write Operation R Kumar, S Choudhary, B Prasad | | |
