Kanjalochan Jena
Kanjalochan Jena
Assistant Professor, LNMIIT, Jaipur
Verified email at lnmiit.ac.in
Title
Cited by
Cited by
Year
Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices
K Jena, R Swain, TR Lenka
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2016
202016
Modeling of forward gate leakage current in moshemt using trap-assisted tunneling and poole–frenkel emission
R Swain, K Jena, TR Lenka
IEEE Transactions on Electron Devices 63 (6), 2346-2352, 2016
172016
Impact of oxide thickness on gate capacitance–Modelling and comparative analysis of GaN-based MOSHEMTs
K JENA, R SWAIN, TR LENKA
Pramana, 1-12, 2015
172015
Interface DOS dependent analytical model development for DC characteristics of normally-off AlN/GaN MOSHEMT
R Swain, K Jena, TR Lenka
Superlattices and Microstructures 84, 54-65, 2015
142015
Impact of a drain field plate on the breakdown characteristics of AlInN/GaN MOSHEMT
K Jena, R Swain, TR Lenka
Journal of the Korean Physical Society 67 (9), 1592-1596, 2015
132015
Impact of barrier thickness on gate capacitance—modeling and comparative analysis of GaN based MOSHEMTs
K Jena, R Swain, TR Lenka
Journal of Semiconductors 36 (3), 034003, 2015
112015
Modeling and simulation of oxide dependent 2DEG sheet charge density in AlGaN/GaN MOSHEMT
R Swain, J Panda, K Jena, TR Lenka
Journal of Computational Electronics 14 (3), 754-761, 2015
92015
Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT
R Swain, K Jena, TR Lenka
Materials Science in Semiconductor Processing 53, 66-71, 2016
82016
Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT
J Panda, K Jena, R Swain, TR Lenka
Journal of Semiconductors 37 (4), 044003, 2016
82016
Modelling of capacitance and threshold voltage for ultrathin normally-off AlGaN/GaN MOSHEMT
R Swain, K Jena, TR Lenka
Pramana 88 (1), 1-7, 2017
72017
DC characteristic analysis of AlGaN/GaN HEMT and MOSHEMT
S Gupta, SN Mishra, K Jena
2016 International Conference on Signal Processing, Communication, Power and …, 2016
72016
Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice-matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor
K Jena, R Swain, TR Lenka
IET Circuits, Devices & Systems 10 (5), 423-432, 2016
72016
Comparative study of AlN/GaN HEMT and MOSHEMT structures by varying oxide thickness
R Swain, K Jena, A Gaini, TR Lenka
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC), 128-131, 2014
52014
A dielectric-modulated normally-off AlGaN/GaN MOSHEMT for bio-sensing application: Analytical modeling study and sensitivity analysis
SN Mishra, K Jena
Journal of the Korean Physical Society 74 (4), 349-357, 2019
42019
Physics‐based mathematical model of 2DEG sheet charge density and DC characteristics of AlInN/AlN/GaN MOSHEMT
K Jena, R Swain, TR Lenka
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2017
42017
Impact of AlN Spacer on Analog Performance of Lattice-Matched AlInN/AlN/GaN MOSHEMT
K Jena, R Swain, TR Lenka
Journal of Electronic Materials 45 (4), 2172-2177, 2016
42016
Model development for current–voltage and transconductance characteristics of normally-off AlN/GaN MOSHEMT
R Swain, K Jena, TR Lenka
Semiconductors 50 (3), 384-389, 2016
42016
Normally-Off AlGaN/GaN MOSHEMT as Lebel Free Biosensor
SN Mishra, R Saha, K Jena
ECS Journal of Solid State Science and Technology 9 (6), 065002, 2020
22020
DC & RF characteristics of normally-off AIN/GaN MOSHEMT by varying oxide thickness
R Swain, K Jena, TR Lenka, GN Dash, AK Panda
2015 IEEE International Conference on Electron Devices and Solid-State …, 2015
22015
Field-Plated AlInN/AlN/GaN MOSHEMT with Improved RF Power Performance
SN Mishra, K Jena, R Goswami, A Agrawal
Advances in Signal Processing and Communication, 611-617, 2019
12019
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