| Modeling of forward gate leakage current in MOSHEMT using trap-assisted tunneling and Poole–Frenkel emission R Swain, K Jena, TR Lenka IEEE Transactions on Electron Devices 63 (6), 2346-2352, 2016 | 29 | 2016 |
| Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices K Jena, R Swain, TR Lenka International Journal of Numerical Modelling: Electronic Networks, Devices …, 2016 | 28 | 2016 |
| Impact of oxide thickness on gate capacitance–Modelling and comparative analysis of GaN-based MOSHEMTs K JENA, R SWAIN, TR LENKA Pramana, 1-12, 2015 | 23 | 2015 |
| Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice‐matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor K Jena, R Swain, TR Lenka IET Circuits, Devices & Systems 10 (5), 423-432, 2016 | 21 | 2016 |
| A dielectric-modulated normally-off AlGaN/GaN MOSHEMT for bio-sensing application: Analytical modeling study and sensitivity analysis SN Mishra, K Jena Journal of the Korean Physical Society 74, 349-357, 2019 | 17 | 2019 |
| Impact of a drain field plate on the breakdown characteristics of AlInN/GaN MOSHEMT K Jena, R Swain, TR Lenka Journal of the Korean Physical Society 67, 1592-1596, 2015 | 17 | 2015 |
| Interface DOS dependent analytical model development for DC characteristics of normally-off AlN/GaN MOSHEMT R Swain, K Jena, TR Lenka Superlattices and Microstructures 84, 54-65, 2015 | 15 | 2015 |
| RF/analog and linearity performance evaluation of lattice-matched ultra-thin AlGaN/GaN gate recessed MOSHEMT with silicon substrate AN Khan, K Jena, S Routray, G Chatterjee Silicon, 1-10, 2022 | 14 | 2022 |
| Modelling of capacitance and threshold voltage for ultrathin normally-off AlGaN/GaN MOSHEMT R Swain, K Jena, TR Lenka Pramana 88, 1-7, 2017 | 13 | 2017 |
| Modeling and simulation of oxide dependent 2DEG sheet charge density in AlGaN/GaN MOSHEMT R Swain, J Panda, K Jena, TR Lenka Journal of Computational Electronics 14, 754-761, 2015 | 13 | 2015 |
| Impact of barrier thickness on gate capacitance—modeling and comparative analysis of GaN based MOSHEMTs K Jena, R Swain, TR Lenka Journal of Semiconductors 36 (3), 034003, 2015 | 13 | 2015 |
| Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT R Swain, K Jena, TR Lenka Materials Science in Semiconductor Processing 53, 66-71, 2016 | 11 | 2016 |
| Normally-off AlGaN/GaN moshemt as lebel free biosensor SN Mishra, R Saha, K Jena ECS Journal of Solid State Science and Technology 9 (6), 065002, 2020 | 10 | 2020 |
| DC characteristic analysis of AlGaN/GaN HEMT and MOSHEMT S Gupta, SN Mishra, K Jena 2016 International Conference on Signal Processing, Communication, Power and …, 2016 | 10 | 2016 |
| Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT J Panda, K Jena, R Swain, TR Lenka Journal of Semiconductors 37 (4), 044003, 2016 | 9 | 2016 |
| Physics‐based mathematical model of 2DEG sheet charge density and DC characteristics of AlInN/AlN/GaN MOSHEMT K Jena, R Swain, TR Lenka International Journal of Numerical Modelling: Electronic Networks, Devices …, 2017 | 8 | 2017 |
| Impact of AlN Spacer on Analog Performance of Lattice-Matched AlInN/AlN/GaN MOSHEMT K Jena, R Swain, TR Lenka Journal of Electronic Materials 45, 2172-2177, 2016 | 7 | 2016 |
| Comparative study of AlN/GaN HEMT and MOSHEMT structures by varying oxide thickness R Swain, K Jena, A Gaini, TR Lenka 2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC), 128-131, 2014 | 7 | 2014 |
| Effect of AlN spacer thickness on device characteristics of AlInN/AlN/GaN MOSHEMT K Jena, TR Lenka 2016 IEEE Region 10 Conference (TENCON), 3253-3256, 2016 | 5 | 2016 |
| Model development for current–voltage and transconductance characteristics of normally-off AlN/GaN MOSHEMT R Swain, K Jena, TR Lenka Semiconductors 50, 384-389, 2016 | 4 | 2016 |
Trupti Ranjan LenkaNational Institute of Technology Silchar, Assam, INDIAVerified email at ieee.org
