Follow
Ajay Kumar Visvkarma
Ajay Kumar Visvkarma
Department of Electronics, University of Delhi, India
Verified email at agnitsemi.com
Title
Cited by
Cited by
Year
Cumulative dose γ-irradiation effects on material properties of AlGaN/GaN hetero-structures and electrical properties of HEMT devices
C Sharma, AK Visvkarma, R Laishram, A Malik, K Narang, S Vinayak, ...
Semiconductor Science and Technology 34 (6), 065024, 2019
312019
Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors
AK Visvkarma, C Sharma, R Laishram, S Kapoor, DS Rawal, S Vinayak, ...
AIP Advances 9 (12), 2019
242019
Effect of γ-ray irradiation on Schottky and ohmic contacts on AlGaN/GaN hetero-structures
C Sharma, AK Visvkarma, R Laishram, A Kumar, DS Rawal, S Vinayak, ...
Microelectronics Reliability 105, 113565, 2020
232020
Improvement in DC and pulse characteristics of AlGaN/GaN HEMT by employing dual metal gate structure
AK Visvkarma, R Laishram, S Kapoor, DS Rawal, S Vinayak, M Saxena
Semiconductor Science and Technology 34 (10), 105013, 2019
152019
Understanding -Ray Induced Instability in AlGaN/GaN HEMTs Using a Physics-Based Compact Model
C Sharma, N Modolo, TL Wu, M Meneghini, G Meneghesso, E Zanoni, ...
IEEE Transactions on Electron Devices 67 (3), 1126-1131, 2020
142020
Impact of Gamma Radiations on Static, Pulsed I–V, and RF Performance Parameters of AlGaN/GaN HEMT
AK Visvkarma, K Sehra, R Laishram, A Malik, S Sharma, S Kumar, ...
IEEE Transactions on Electron Devices 69 (5), 2299-2306, 2022
122022
Advances in DC/RF performance of AlGaN/GaN MIS-HEMT by incorporating dual metal gate architecture
AK Visvakarma, K Sehra, R Laishram, DS Rawal, M Saxena
IETE Technical Review 39 (2), 301-309, 2022
92022
Improvement in Schottky barrier inhomogeneities of Ni/AlGaN/GaN Schottky diodes after cumulative γ-ray irradiation
AK Visvkarma, C Sharma, C Saraswat, DS Rawal, S Vinayak, M Saxena
Semiconductor Science and Technology 36 (6), 065012, 2021
52021
Ohmic contact morphology improvement with reduced resistance using Si/Au/Ti/Al/Ni/Au (AlGaN) and Si/Au/Ti/Al/Ni/Au (InAlN) stack layers in III-Nitride HEMTs
AK Visvkarma, R Laishram, S Kapoor, DS Rawal, S Vinayak, M Saxena
Semiconductor Science and Technology 37 (8), 085006, 2022
12022
Investigation on the variation of sheet resistance of rf deposited nichrome thin films with deposition parameters
AK Visvkarma, R Laishram, HK Saini, RK Sawal, S Kapoor, DS Rawal
The Physics of Semiconductor Devices: Proceedings of IWPSD 2017, 199-203, 2019
12019
Investigation of Traps in AlGaN/GaN HEMT Epitaxial Structure Using Conductance Method
Chanchal, AK Visvkarma, H Sheoran, A Malik, R Laishram, DS Rawal, ...
International Symposium on VLSI Design and Test, 76-84, 2022
2022
Dependence of Gate Leakage Current on Efficacy of Gate Field Plate in AlGaN/GaN HEMT
C Chanchal, AK Visvkarma, A Malik, R Laishram, DS Rawal, M Saxena
2022 IEEE VLSI Device Circuit and System (VLSI DCS), 265-268, 2022
2022
Comparative study of polymer based novel organic–inorganic hetero-junctions with n-GaN and AlGaN/GaN epi-structures
R Khan, AK Visvkarma, K Narang, RK Bag, MVG Padmavati, R Tyagi, ...
Materials Science and Engineering: B 272, 115364, 2021
2021
Enhancement in Electrical Characteristics of AlGaN/GaN HEMT Using Gate Engineered Dielectric Pocket Dual-Metal Gate
AK Visvkarma, K Sehra, R Laishram, DS Rawal, M Saxena
Computers and Devices for Communication: Proceedings of CODEC 2019, 369-374, 2021
2021
Effect of In-homogeneities on Schottky barrier height & Richardson constant of Ni-AlGaN/GaN Schottky contact
AK Visvkarma, C Sharma, NK Saini, M Saxena, R Laishram, DS Rawal
2020 5th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2020
2020
Effect of Nitrogen Plasma on AlGaN/GaN HEMT Devices
AK Visvkarma, R Laishram, C Sharma, N Kumar, DS Rawal, M Saxena
Impact of Different Contact Metals on the Schottky Characteristics of AlGaN/GaN HEMT
AK Visvkarma, HK Saini, N Kumar, R Laishram, S Kapoor, DS Rawal, ...
The system can't perform the operation now. Try again later.
Articles 1–17